A5101789094- Semiconductor Quantum Structures and Devices
- Quantum Dots Synthesis And Properties
- Quantum and electron transport phenomena
- GaN-based semiconductor devices and materials
- Chalcogenide Semiconductor Thin Films
- ZnO doping and properties
- Ga2O3 and related materials
- Semiconductor Lasers and Optical Devices
- Semiconductor materials and devices
- Chemical and Physical Properties of Materials
- Near-Field Optical Microscopy
- Surface and Thin Film Phenomena
- Advanced Semiconductor Detectors and Materials
- Photonic Crystals and Applications
Mohammed V University
2015-2022
École Normale Supérieure de l'Enseignement Technique de Mohammedia
2017-2020
Centre Régional Africain des Sciences et Technologies de l'Espace
2017-2020
Laboratoire de Recherche Scientifique
2016-2019
École Normale Supérieure de Tétouan
2003
This paper reports a recent study on the polarizability and photoionization cross section (PCS) of hydrogenic impurity confined in spherical AlAs/GaAs core/shell quantum dot under external electric field hydrostatic pressure. In framework effective mass theory, variational approach is used to determine polarizability, binding energy, PCS single donor dot. Our numerical calculations reveal that all these fundamental parameters are deeply dependent core shell radii. The localization inside...
We have studied the simultaneous effects of magnetic and electric fields on ground-state energy a donor impurity confined in polar CdSe quantum nanocrystallite embedded nonpolar matrix. Calculations are performed framework effective-mass approximation using Hass\'e variational approach. describe effect confinement by finite deep potential we take onto account interaction between charge carriers (electron ion) longitudinal optical phonons (LO phonons). It is found that corrections due to LO...
The influences of hydrostatic pressure combined to the size effect on behavior exciton in 2 D GaN/AlN quantum ultra‐thin disk, binding energy and optical absorption coefficient are investigated. Our approach is performed framework effective mass theory by using a variational method with robust trial wave function taking into account dependence size, dielectric constant masses pressure. Variations excitonic energy, transition determined according results our numerical calculations show that...
Abstract The effects of low electric field and finite‐barrier height on the ground state energy a donor impurity confined in polar CdSe spherical quantum dot embedded non‐polar matrix were studied. Calculations carried out framework effective mass approximation using Hassé variational approach. effect confinement was described by finite deep potential taking into account interactions between charge carriers (electron ion) longitudinal optical phonons (LO‐phonons). It found that binding...
Understanding the behavior of single dopant in semiconductors is a challenge to attain high control on optoelectronic devices. Based fact that external perturbations have an important impact properties doped nanocrystals, we studied simultaneous effects phonons and conduction band non-parabolicity combined dielectric mismatch donor position photoionization cross section off-center spherical GaN/InN core-shell quantum dots. The calculations were carried out within framework effective-mass...
Groupe III–V semiconductors are well known for their electronics and optical properties. For instance, GaAs semiconductor, which has a direct band gap is used in several important applications such as light-emitting diodes, laser diodes detectors. This work present theoretical investigation on the binding energy of an off-center single dopant InAs/GaAs core/shell quantum dots embedded glace matrix. The energies with without dielectric mismatch determined framework effective mass...
In the present work, we studied effects of hydrostatic pressure and magnetic field on binding energy susceptibility diamagnetic shallow donor confined in inhomogeneous quantum dots GaAlAs-GaAs-GaAlAs. Our calculations are performed using a variational approach within mass effective approximation. We describe confinement by an infinite deep potential. The ground state computed as function pressure, dot size, position strength field. results show energy, increases with for any ratio, inner...
The polaronic effect on the linear, third-order nonlinear and total optical absorption coefficients have been calculated in case of GaAs/AlAs core/shell quantum dot, with impurity is positioned at central radial position GaAs shell. calculations are realized framework effective mass approximation numerical results obtained by using a variational method an infinite confining potential. show that has great influence properties core/ shell he causes red-shift associated to light absorption....