A5101825368- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Semiconductor Quantum Structures and Devices
- solar cell performance optimization
- Chalcogenide Semiconductor Thin Films
- Silicon Nanostructures and Photoluminescence
- Photovoltaic System Optimization Techniques
- Quantum Dots Synthesis And Properties
- Advancements in Semiconductor Devices and Circuit Design
- Perovskite Materials and Applications
- Nanowire Synthesis and Applications
- Parallel Computing and Optimization Techniques
- Semiconductor materials and devices
- Electronic Packaging and Soldering Technologies
- Automotive and Human Injury Biomechanics
- GaN-based semiconductor devices and materials
- Advanced Semiconductor Detectors and Materials
- Rocket and propulsion systems research
- Interconnection Networks and Systems
- Superconducting Materials and Applications
- Aerodynamics and Fluid Dynamics Research
- Muon and positron interactions and applications
- Embedded Systems Design Techniques
- Metal and Thin Film Mechanics
Indian Institute of Technology Mandi
2016-2024
Nirma University
2021
Indian Institute of Technology Bombay
2010-2017
Arizona State University
2010-2014
Arizona's Public Universities
2013
University of Delaware
2008
In this paper, an analytical model has been developed to observe the recombination losses involved in a tunnel oxide passivated contact solar cell with carrier-selective layer constituting polycrystalline silicon (poly-Si). The main focus of paper is contribution each component current density and its effect on open-circuit voltage, V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> . emitter saturation (Joe), surface velocity, substrate...
In this paper, we have developed a physics-based analytical model for the electrical characteristics of passivated silicon carrier-selective contact (CSC) solar cells and validated it with numerical simulations. The comprises solutions of: 1) Poisson equation, accurately capturing level inversion accumulation at crystalline (c-Si) layer interfaces, 2) recombination current various mechanisms work in cell. calculations establish that CSC potential to achieve an efficiency greater than 26%...
We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell which show that Auger-limited open-circuit voltages up to 787 mV (on 10 μm monocrystalline substrate) efficiencies 26.7% 150 may be possible for front-contacted devices exhibit low interface recombination velocity (IRV) at the GaP/Si employ random pyramidal texturing, detached silver reflector, rear locally diffused point...
In this paper, a solar cell with amorphous silicon (a-Si) passivation that uses transition metal oxides (TMOs) for charge carrier collection has been modeled and analyzed its performance. Charge selection incorporated through selective band alignment provided by NiO TiO2 TMOs electrons holes, respectively. The presence of a-Si interfacial layers defect prevents loss due to high interface state densities at the Si/TMO interfaces. This structure is potential candidate high-efficiency cells...
The device operation principle of amorphous silicon/crystalline silicon heterojunction solar cell is discussed. band diagram obtained by the computer model developed in commercial simulator Sentaurus shows that c-Si surface inverted at interface between a-Si and (heterointerface). A strong inversion gives a electric field surface, which turn facilitates transport minority carriers across heterointerface. high performance requires strongly surface. Calculations are performed to show doping...
Abstract The transport of photogenerated minority carriers (photocarriers) across the heterointerface amorphous silicon (a‐Si) and crystalline (c‐Si) in a‐Si/c‐Si heterostructure solar cell is shown this work to critically depend on non‐Maxwellian energy distribution function (EDF) those impinging heterointerface. A theoretical model presented that integrates effect high electric field inversion region upon EDF with transmission probability photocarriers simulated by full solution Boltzmann...
Silicon Heterojunction Interdigitated Back Contact (SHJ-IBC) solar cells were studied by two dimensional modeling using Sentaurus TCAD tools. It was shown that low fill factor caused the S-shape behavior of experimental J-V curves standard interdigitated back contact can be recovered making small openings in intrinsic buffer layer. The layer also substantially reduce influence relative dimensions silicon strips as when compared to with a continuous
The InAs∕GaAsSb material system is a promising medium for the implementation of quantum dot solar cell due to favorable valence band alignment. requires highly dense, ordered array dots overlap wave functions form in gap host material. Since GaAsSb barriers are III-V-V ternary alloy composition particularly sensitive variations temperature. We have studied variation Sb content thin layers GaAs various fluxes Sb. purpose was be able predict required flux at particular temperature obtain...
We present a high-level synthesis flow for mapping an algorithm description (in C) to provably equivalent register transfer level (RTL) of hardware. This uses intermediate representation which is orthogonal factorization the program behavior into control, data and memory aspects, suitable large systems. show that optimizations such as arbiter-less resource sharing can be efficiently computed on this representation. apply wide range examples ranging from stream ciphers database linear algebra...
The modeling and analysis of recombination properties is one the critical aspects in design development high efficiency amorphous silicon (a-Si)/crystalline (c-Si) heterostructure solar cell (SH-SC). In this paper, we have developed a model pertinent for a-Si/c-Si SH-SC. Based on model, an analytical expression relationship between effective carrier lifetime (τ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ) excess concentration...
A novel device concept utilizing the approach of selectively extracting carriers at respective contacts is outlined in work. The dominant silicon solar cell technology based on a diffused, top-contacted p-n junction relatively thick wafer for both commercial and laboratory cells. V<sub>OC</sub> hence efficiency diffused limited by emitter recombination current value 720 mV considered to be upper limit. more than 100 smaller thermodynamic limit as applicable Also, use thin wafers (< 50 um)...
Photovoltaic devices based on amorphous silicon (a-Si)/ crystalline (c-Si) heterostructure exhibits excellent surface passivation with the highest open circuit voltage being reported these devices. A plausible explanation for to show low recombination is that junction induced in c-Si and an inversion region present at heterointerface. In this work, presence of heterointerface between intrinsic a-Si theoretically shown by a computer model developed commercial simulator Sentaurus...
Abstract In the present study, design and analysis of smoke generator are done for low-speed wind tunnel. The tunnel fan is fitted with Variable Frequency Drive to produce speed in range 3 32 m/s 150 1500 rpm. was according Preston Sweeting mist principle corresponding free stream velocity m/s. A controlled consisting kerosene reservoir, heater, blower, liquid column height adjustment mechanism, valves etc. designed fabricated. produced at rate 154 cm /s which close flow 149 /s. To supply...
The transport of photogenerated minority carriers (photocarriers) across the heterointerface amorphous silicon (a-Si) and crystalline (c-Si) in a-Si/c-Si heterostructure solar cell is shown this work to critically depend on non-Maxwellian energy distribution function those impinging heterointerface. A theoretical model presented that integrates effect high electric field inversion region upon with transmission probability photocarriers simulated by full solution Boltzmann equation Monte...
The charged state density at the a-Si/c-Si interface is an important parameter in a heterojunction cell. extraction of from measurements lateral conductance demonstrated by simulations. In inversion layer formed between and c-Si (heterointerface). much higher than doped or intrinsic a-Si current primarily flows through this path. increase heterointerface weakens invers hence lowers these devices This effect studied work applying theoretical model developed commercial simulator Sentaurus....
The InAs/GaAsSb quantum dot/barrier material system has been identified as a candidate for implementing the dot (QD) solar cell an Sb content of ∼ 12%. We present results from growth this on GaAs substrates by Molecular Beam Epitaxy (MBE). show that GaAsSb requires special care in order to ensure highest quality interface and also maintain composition. When InAs QDs are grown GaAsSb, role strain determining properties is seen be profound. Results PL studies sizes controlled layer thickness...
Crystalline silicon technology is expected to remain the leading photovoltaic industry workhorse for decades. We present here objectives and workplan of a recently launched project funded by U.S. Department Energy through Foundational Program Advance Cell Efficiency II (FPACE II), which aims at crystalline an efficiency breakthrough. The will tackle fundamental approach materials design, defect engineering, device simulations growth characterization. Among main novelties, implementation...
A solar cell with transition metal oxides as back contact carrier selective layers has been conceptualized and analyzed in this paper. We term such a (CSBC-SC). CSBC-SC both contacts on the rear thus circumvents trade-off between surface passivation, light trapping, charge extraction, necessary for front development of high-performance CSC sides (frontrear CSC-SC). Further, it also eliminates optical losses due to shading parasitic absorption occurring low bandgap thin film layers....