A5058261896- Silicon Carbide Semiconductor Technologies
- Multilevel Inverters and Converters
- Semiconductor materials and devices
- Electromagnetic Compatibility and Noise Suppression
- Advanced ceramic materials synthesis
- Advanced DC-DC Converters
- Aluminum Alloys Composites Properties
- Advancements in Semiconductor Devices and Circuit Design
- Nanomaterials and Printing Technologies
- Electronic Packaging and Soldering Technologies
- Silicon and Solar Cell Technologies
- Heat Transfer and Optimization
- 3D IC and TSV technologies
- Advanced materials and composites
- Thermal properties of materials
- Nanofabrication and Lithography Techniques
- Induction Heating and Inverter Technology
Huazhong University of Science and Technology
2021-2025
The dynamic current imbalance between paralleled SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> s can cause unbalanced switching losses and limit the capacity. It is essential to investigate influences of circuit parameters. However, parasitic mutual inductances common values parameters are unclear. To address these issues, an improved sharing model established considering all inductances. Based on this model, it found that...
The dynamic current imbalance between paralleled SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> s will cause unbalanced losses and reduce capacity. existing balancing methods make the circuit more complex or hard to design implement. Hence, this article proposes a method by connecting monolithic Si- <italic xmlns:xlink="http://www.w3.org/1999/xlink">RC</i> snubber s, which maintains simple structure is easy Balanced currents...
Silicon carbide (SiC) power module with lower loop inductance, better dynamic current sharing properties, and thermal performance will contribute to achieve high density three-phase inverter in medium-voltage applications. Inspired by the concept of double-side-end busbar, a novel double-sided bonding (DSB) is proposed this article. For three chips' parallel situation, structure decreases parasitic inductance 40% compared traditional baseline structure. Besides also has properties. To...
In multichip SiC power modules, unbalanced dynamic currents between the paralleled dies can induce switching losses and junction temperatures, reducing device's lifetime. Existing current sharing methods face challenges of low integration or insufficient effectiveness. This article presents a highly integrated balancing method with full-coupled inductors in gate branches. Compared to existing methods, presented does not change simple circuit layout module area. Thus, it is easier implement....
To leverage the outstanding high-temperature resistance of silicon carbide (SiC), theoretically up to 500 °C, conventional packaging materials, and structures have become inadequate meet requirements. The double-sided cooling (DSC) package structure can eliminate power bond wires, which are reliability weak points in package, has low parasitic inductance thermal resistance. However, it still faces severe stress, hinders its applications. Hence, this study proposes a resistant DSC...
The dynamic current sharing between the parallel SiC chips is important in multi-chip modules. This paper presents a balancing approach without changing original simple module layout with multi chips. method based on stacked DBC bridges and decoupling capacitors. Stacked soldered capacitors distribute power connecting DC+ DC-electrodes. By this method, distributed structure achieved layout. structure, design process fabrication are kept simple, imbalance reduced. easier to implement than...
Traditional Si-based semiconductors have a large reverse recovery charge, which brings great challenges to the application of totem-pole bridgeless PFC. With rise third-generation semiconductor device SiC/GaN, PFC has gradually attracted people's attention. This paper designs high-power density, high-efficiency bidirectional AC/DC converter based on GaN HEMTs. When working in forward direction, is connected synchronous Buck realize 220V@AC input, and 300V 400V@DC lA constant current output;...