A5094114071- Chalcogenide Semiconductor Thin Films
- Perovskite Materials and Applications
- Quantum Dots Synthesis And Properties
- Thermal Expansion and Ionic Conductivity
- ZnO doping and properties
- Molecular Junctions and Nanostructures
- Advanced ceramic materials synthesis
- Hydrogen Storage and Materials
- Aluminum Alloys Composites Properties
- Advanced Semiconductor Detectors and Materials
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Inorganic Chemistry and Materials
- Advanced Thermoelectric Materials and Devices
Dartmouth College
2023-2024
The AM2Pn2 (A= Ca, Sr, Ba, Yb, Mg; M= Mn, Zn, Cd, and Pn=N, P, As, Sb, Bi) family of Zintl phases has been known as thermoelectric materials recently gained much attention for highly promising solar absorbers in single junction tandem cells. In this paper we will, from first-principles, explore the entire compounds terms their ground state structure, thermodynamic stability, electronic structure. We also perform photoluminescence spectroscopy on bulk powder thin film samples to verify our...
Abstract The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with bandgaps in the range ≈1.5–2.3 eV, for use top cell paired a narrower‐gap bottom cell. An outstanding challenge is finding suitable optoelectronic defect properties, good operational stability, synthesis conditions that preserve underlying device layers. This study demonstrates Zintl phosphide compound CaZn 2 P as compelling candidate semiconductor these applications....
The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with band gaps in the range ~1.5-2.3 eV, for use top cell paired a narrower-gap bottom cell. An outstanding challenge is finding suitable optoelectronic defect properties, good operational stability, synthesis conditions that preserve underlying device layers. This study demonstrates Zintl phosphide compound CaZn$_2$P$_2$ as compelling candidate semiconductor these applications. We...
Bulk Ge crystals, characterized by significantly lower threading dislocation densities (TDD) than their epitaxial counterparts, emerge as optimal candidates for studying and improving laser performance. Our study focused on the thickness TDD impacts Ge's photoluminescence (PL). The PL peak intensity of a bulk sample (TDD = 6000 cm^(-2), n-doping 10^16 cm^(-3)) experiences remarkable 32-fold increase is reduced from 535 to 2 micron. This surpasses 0.75 micron thick epi-Ge Si (biaxial tensile...
Thin-film photovoltaics offers a path to significantly decarbonize our energy production. Unfortunately, current materials commercialized or under development as thin-film solar cell absorbers are far from optimal they show either low power conversion efficiency issues with earth-abundance and stability. Entirely new disruptive platforms rarely discovered the search for is traditionally slow serendipitous. Here, we use first principles high-throughput screening accelerate this process. We...