A5031075601- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Photonic and Optical Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Neural Networks and Reservoir Computing
- Synthesis and properties of polymers
- Quantum Information and Cryptography
- Epoxy Resin Curing Processes
- Force Microscopy Techniques and Applications
- Quantum Computing Algorithms and Architecture
- Advanced Energy Technologies and Civil Engineering Innovations
- Advanced Theoretical and Applied Studies in Material Sciences and Geometry
- Plasmonic and Surface Plasmon Research
- Advanced Optical Sensing Technologies
- Ferroelectric and Negative Capacitance Devices
- Dielectric materials and actuators
- Electronic and Structural Properties of Oxides
- Electrochemical Analysis and Applications
- Mechanical and Optical Resonators
- Gold and Silver Nanoparticles Synthesis and Applications
- Photonic Crystals and Applications
- Material Properties and Applications
University of Rome Tor Vergata
2021-2024
Istituto Nazionale di Fisica Nucleare, Roma Tor Vergata
2022-2024
Institute for Microelectronics and Microsystems
2021
Istituto Nazionale per l'Assicurazione Contro gli Infortuni sul Lavoro
2021
Herzen University
2017-2019
Centre National de la Recherche Scientifique
2006-2008
Laboratoire de Physique des Interfaces et des Couches Minces
2006-2008
École Polytechnique
2006-2008
Philips (Netherlands)
2003-2006
In this work the authors studied impurity solubilities of groups III and V elements in silicon resulting from laser anneal, flash solid-phase-epitaxial regrowth. Rutherford backscattering channeling analysis was used to determine substitutional depth profiles generated difference between random aligned spectra. Despite large peak temperatures times, anneals produce similar results with maximum beating equilibrium values by one two orders magnitude depending on impurity. The correlation...
We demonstrate that boron diffuses at high concentrations during low-temperature thermal annealing in amorphous silicon pre-amorphized by germanium ion implantation. For a typical ultrashallow junction doping profile, as 2×1020 cm−3 appear to be highly mobile 500 and 600 °C the region before recrystallization. In crystalline same temperatures concentration is least two orders of magnitude lower. also show diffusivity similar with without fluorine. The role fluorine not enhance diffusivity,...
Since the 1980s, researchers have taken giant steps in understanding how to use quantum mechanics for solving real problems—for example, making a computer that works according laws of mechanics. In recent decades, tried develop platform information and computation can be integrated into digital telecom technologies without need cryogenic environment. The current status research field photonics will reviewed. A review most common photonic platforms given, together with main achievements...
We demonstrate that ultrashallow high-concentration phosphorus profiles in silicon diffuse preferentially toward the surface during low-temperature annealing at 700°C after recrystallization of an amorphous layer. In this work, we observe preferential diffusion following a preamorphizing germanium implant, and also self-amorphizing implant. This phenomenon is driven by presence dissolution interstitial defects. The greater distance between defect band profile, less for fixed anneal time....
The physical and electrical properties of dielectric layers deposited by atomic layer deposition (ALD) are reported. precursor chemistries used for were Two processes with pulse ratios -rich") investigated. Measurements X-ray photoelectron spectroscopy channeling Rutherford backscattering spectrometry show that these result in 0.56 0.34-0.37, respectively. diffraction measurements showed formation a cubic phase -rich starting at 850°C. In layers, no crystallization was detected up to 1100°C....
In this work we report on the extensive characterization of amorphous silicon carbide ($a$-SiC) coatings prepared by physical deposition methods. Our investigation is performed within perspective application $a$-SiC as an optical material for high-precision experiments and, in particular, gravitational wave interferometry. We compare results obtained with two different sputtering systems [a standard radio frequency (rf) magnetron and ion-beam sputtering] to grasp impact setups repeatability...
Integrated photonic platforms have rapidly emerged as highly promising and extensively investigated systems for advancing classical quantum information technologies, since their ability to seamlessly integrate components within the telecommunication band with existing silicon-based industrial processes offers significant advantages. However, despite this integration facilitating development of novel devices, fostering fast reliable communication protocols manipulation information,...
We have studied impurity redistribution due to low-temperature crystallization of amorphous silicon. Many impurities move ahead the amorphous-crystalline interface and relocate closer surface. In general, is more likely at high concentrations. By investigating a wide range concentrations for indium, lead, antimony, we demonstrate direct correlation between magnitude this effect metastable solubility limit in crystalline At low concentrations, it less redistribute. However, regime show that...
We investigate the influence of initial stage thermal treatment during solid-phase epitaxial regrowth (SPER) on electrical activation level arsenic in self-amorphized silicon, both with respect to heating ramp-up rates and use low-temperature preanneals. Enhancement electrically-active concentration by 14% is observed for fastest (430°C∕s) compared slowest ones (36°C∕s). Around 50% 1015at∕cm2, implant at 5 keV found be nonsubstitutional this fraction reaches even 99% dose 3×1015at∕cm2....
The physical (growth rate, composition, crystallization) and electrical properties of Zr-silicates deposited by atomic layer deposition are reported. Hf- particularly attractive for use as gate dielectrics in advanced complementary metal-oxide-semiconductor (CMOS) technologies, because they exhibit high crystallization temperature result carrier mobility at the Si interface. Zr-silicate layers with Zr:Si atom % ratios 2:1 1:1 were on respectively. For these layers, we found k values...
The effect of preamorphization and solid-phase epitaxial regrowth on indium doping profiles in silicon has been investigated. It is shown that preamorphized significantly reduces channeling during ion implantation, producing a much more abrupt profile. During recrystallization by thermal annealing, segregates front the moving amorphous/crystalline interface, creating clearly visible peak We establish physical mechanism for this phenomenon 1018–1019 cm−3 concentration range segregation...
The time evolution of B, As, and In doping profiles during after solid phase epitaxial regrowth (SPER) was monitored for conditions applicable to sub-65 nm CMOS technologies. As segregate SPER by a sweep the regrowing interface. case significant B diffusion in a-Si occurs SPER, while afterwards uphill dominates. With aid atomistic simulation we have identified temperature dependent maximum diffusion.
Structural and dielectric properties of polymeric composites on the basis polyethylene a titanate barium are investigated. It is shown that studied system can be considered as composite including electrically isolated spherical particles filler in matrix. Emergence maximum permeability loss factor connected with strengthening interaction between polar groups matrix polarized ferroelectric ceramic BaTiO3.
Single-photon detectors have gained significant attention recently, driven by advancements in quantum information technology. Applications such as key distribution, cryptography, and computation demand the ability to detect individual quanta of light distinguish between single-photon states multi-photon states, particularly when operating within waveguide systems. Although detector fabrication has been established for some time, integrating with waveguides using new materials suitable...
Abstract Molecular mobility and charge transport in R-SOD aromatic thermoplastic polyimide were studied by dielectric method. Dielectric spectra of all samples the examined temperature frequency range revealed two regions dipole polarization relaxation. The β- process is determined local motion phenyl rings diamine dianhydride moieties macromolecule with adjacent groups. α-process can be associated crossing glass transition temperature, i.e., segmental large-scale main chains. introduction...
We have realized a 3D substrate for surface-enhanced Raman scattering (SERS) sensor with DELIL (Double Exposure Laser Interference Lithography) technique and silver nanoparticles (Ag-NPs) functionalized an appropriate aptamer. The substrates were obtained by means of soft mold in thin layer sol-gel Ti/TMSPM on silicon using intermediate stamp fabricated photosensitive material. was turn produced Lloyd's mirror set up double exposition (Ar+ laser at 364 nm, 23 mW) photopolymerizable film two...