Guilherme J. Inacio

ORCID: 0000-0003-1956-321X
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About
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Research Areas
  • Advanced Photocatalysis Techniques
  • Semiconductor materials and devices
  • Graphene research and applications
  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Catalytic Processes in Materials Science
  • Silicon Carbide Semiconductor Technologies
  • Ammonia Synthesis and Nitrogen Reduction
  • Inorganic Chemistry and Materials

Universidade Federal do Espírito Santo
2023-2025

Defect engineering of two-dimensional (2D) materials offers an unprecedented route to increase their functionality and broaden applicability. In light the recent synthesis 2D Silicon Carbide (SiC), a deep understanding effect defects on physical chemical properties this new SiC allotrope becomes highly desirable. This study investigates 585 extended line (ELDs) in hexagonal considering three types interstitial atom pairs (SiSi-, SiC-, CC-ELD) using computational methods like Density...

10.1039/d3cp04267g article EN Physical Chemistry Chemical Physics 2023-01-01

This research extensively examines the optoelectronic and photocatalytic characteristics of α-Ge(111) monolayer for hydrogen oxygen evolution reactions. Using first-principles calculations, a direct band gap 1.48 eV 1.46 is determined under HSE06 GW approximations, respectively. widens when segmented into flakes due to quantum confinement effects. Optical analysis shows absorption peaks in visible ultraviolet ranges, with an edge ranging from 1.47 1.87 eV, dependent on inclusion excitonic...

10.2139/ssrn.4835106 preprint EN 2024-01-01
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