A5021421485- Perovskite Materials and Applications
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- 2D Materials and Applications
- MXene and MAX Phase Materials
- Conducting polymers and applications
- Organic Light-Emitting Diodes Research
- Transition Metal Oxide Nanomaterials
- Neuroscience and Neural Engineering
- Advanced Photocatalysis Techniques
- Photoreceptor and optogenetics research
- Graphene research and applications
- Quantum Dots Synthesis And Properties
- Advanced Sensor and Energy Harvesting Materials
- Ga2O3 and related materials
- Chalcogenide Semiconductor Thin Films
- Solid-state spectroscopy and crystallography
- Electronic and Structural Properties of Oxides
- Luminescence Properties of Advanced Materials
- Magnetic and transport properties of perovskites and related materials
- Supercapacitor Materials and Fabrication
- EEG and Brain-Computer Interfaces
- Luminescence and Fluorescent Materials
- Advanced Battery Materials and Technologies
- Organic and Molecular Conductors Research
Tianjin University of Technology
2019-2024
Henan Academy of Sciences
2024
Henan University
2024
Florida State University
2015-2023
Florida A&M University - Florida State University College of Engineering
2017-2023
Dalian University of Technology
2018-2020
Beijing University of Chemical Technology
2020
Dalian University
2018-2019
Tallahassee Orthopedic Clinic
2018
National High Magnetic Field Laboratory
2015
Organometal halide perovskite and poly(ethylene oxide) composite thin films are studied. Single-layer light-emitting diodes using the film sandwiched between indium tin oxide indium-gallium eutectic alloy exhibit a low turn-on voltage high brightness because of ionic conductivity formation p-i-n homojunction.
Printed organometal halide perovskite light-emitting diodes (LEDs) are reported that have indium tin oxide (ITO) or carbon nanotubes (CNTs) as the transparent anode, a printed composite film consisting of methylammonium lead tribromide (Br-Pero) and poly(ethylene oxide) (PEO) emissive layer, silver nanowires cathode. The fabrication can be carried out in ambient air without humidity control. devices on ITO/glass low turn-on voltage 2.6 V, maximum luminance intensity 21014 cd m–2, external...
Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires electron-injection layer (EIL) between the cathode hole-injection (HIL) anode layer. The recent advancement of halide perovskite semiconductors opens up new path to electroluminescent devices with greatly simplified structure. We report cesium lead tribromide light-emitting diodes (LEDs) without aid EIL or HIL....
Intrinsically stretchable light‐emitting diodes (LEDs) are demonstrated using organometal‐halide‐perovskite/polymer composite emitters. The polymer matrix serves as a microscale elastic connector for the rigid and brittle perovskite induces stretchability to emissive layers. LEDs consist of poly(ethylene oxide)‐modified poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate transparent anode, perovskite/polymer layer, eutectic indium–gallium cathode. devices exhibit turn‐on voltage 2.4 V,...
Halide perovskites have recently been investigated for various solution-processed optoelectronic devices. The majority of studies focused on using intrinsic halide perovskites, and the intentional incoporation dopants has not well explored. In this work, we discovered that small alkali ions, including lithium sodium could be electrochemically intercalated into a variety pseudohalide perovskites. ion intercalation caused lattice expansion perovskite crystals resulted in an n-type doping Such...
X-ray detectors are demonstrated using composite films of lead-free Cs<sub>2</sub>AgBiBr<sub>6</sub> halide double perovskite embedded in a polymer matrix as the photoconductors.
Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis solar cells and ultrashort operation lifetimes light-emitting diodes. In this work, ion is utilized for formation of p-i-n junction at ambient temperature single-crystalline perovskites. The subsequently stabilized by quenching ionic movement low temperature. Such strategy manipulating led to efficient diodes that emit 2.3 eV photons...
An artificial nociceptor, as a critical and special bionic receptor, plays key role in bioelectronic device that detects stimuli provides warnings. However, fully exploiting applications remains major challenge due to the lack of methods implementing basic nociceptor functions nociceptive blockade single device. In this work, we developed Pt/LiSiO
Abstract Semiconductor photocatalytic hydrogen evolution from water splitting using solar energy is one of the most potential strategies for settling crisis, but a bottleneck occurred in developing highly efficient photocatalyst. Herein, we successfully fabricated tubular g‐C 3 N 4 with nitrogen defects (including both vacancies and cyano groups) extended π‐conjugated system, wherein system were conveniently introduced during thermal polymerization pyridinium alkaline ionic liquid‐modified...
Two-dimensional (2D) van der Waals magnetic materials that host skyrmions are promising candidates for the next-generation memory devices. Here, we have predicted a class of 2D chromium-based monolayer ferromagnetic semiconducting with Curie temperature (Tc) exceeding 320 K. We systematically studied their ferromagnetism and quantum transport properties by employing combination density functional calculations, Monte Carlo simulations, atomic spin dynamics non-equilibrium Green function...
Both synaptic emulators and brain-like calculation demand an energy-efficient bio-realistic device where two-dimensional materials have been proven as a promising competitor. Lateral memristors based on transfer-free single-crystal MoS2 with single layer grown by chemical vapor deposition (CVD) were fabricated. Here the memristor successfully emulates typical biological behaviors including excitatory/inhibitory post-synaptic current (EPSC/IPSC), spike timing-dependent plasticity (STDP),...
With the emergence of organometal halide perovskite semiconductors, it has been discovered that a p–i–n junction can be formed in situ due to migration ionic species when bias is applied. In this work, we investigated formation dynamics methylammonium lead tribromide (MAPbBr3)/polymer composite thin films. It was concluded p- and n- doped regions propagated into intrinsic region with an increasing bias, leading reduced layer thickness effective light-emitting regardless thicknesses (300 nm...
Abstract Halide perovskite materials have come to the forefront of optoelectronics recently owing their excellent light absorbing and emitting properties. Despite properties there are still problems that need be overcome such as short operating lifetimes, an observed hysteresis behavior in current–voltage characteristics. It is found these challenges could by developing a deterministic nucleation process using gold promoter control grain size layer. shown this can expanded across multiple...
Negative capacitance field effect transistors made of Hf0.5Zr0.5O2 (HZO) are one the most promising candidates for low-power-density devices because extremely steep subthreshold swing and high open-state currents resulting from addition ferroelectric materials in gate dielectric layer. In this paper, HZO thin films were prepared by magnetron sputtering combined with rapid thermal annealing. Their properties adjusted changing annealing temperature thickness HZO. Two-dimensional MoS2 back-gate...
Abstract A porous halide perovskite–polymer nanocomposite is developed using a freeze‐drying process. Such composite shows strong fluorescence quenching after exposure to explosive nitroaromatics, nitroamines, and nitrate esters with sensitivity of few nanograms. In addition, this robust against moisture solvents, showing negligible change in intensities submersion water, alcohol, acid, base, salt solutions. Transient absorption spectroscopy studies further disclose that the chemical...
Hafnium oxides (HfO x ) based flexible memristors were fabricated on polyethylene naphtholate (PEN) substrates to simulate a variety of bio-synapse functions. By optimizing the manufacturing conditions electrode and active films, it is proved that TiN/HfO /W/ITO/PEN bilayer device has robust flexibility can still be modulated after 2000 times bending. The memristor exhibits better symmetrical linear characteristics with excellent uniformity at lower programming power consumption (∼38 μW). In...
Healthcare systems worldwide have been stressed to provide sufficient resources serve the increasing and aging population in our society. The situation became more challenging at time of pandemic. Technology advancement, especially adoption wearable health monitoring devices, has provided an important supplement current clinical equipment. Most devices are rigid, however, human tissues soft. Such a difference prohibited intimate contact between two jeopardized wearing comfortableness, which...
A facile and scalable approach is firstly presented to fabricate novel O‐doped nitrogen defective porous g‐C 3 N 4 nanosheets (PNV‐CN) through thermal polymerization of a guanylurea nitrate (GLUN) precursor that forms by nitric acid assisted heating reaction process dicyandiamide (DCDA), in which ions act as the intensified gas template function for producing pores carbon nitride nanosheet structures oxidant forming defects. PNV‐CN demonstrates high visible light photocatalytic activity 62.4...
As we all know, when memories are integrated into arrays on a large scale, the phenomenon of current leakage may occur, which leads to array crosstalk. The selection memristors with self-rectifying effects can be used solve crosstalk problems without adding additional device cells, allowing for higher level integration under same conditions. In this article, by optimizing thickness Al2O3 switching layer in Au/TaO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...