A5100626456- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- 2D Materials and Applications
- Perovskite Materials and Applications
- MXene and MAX Phase Materials
- Photoreceptor and optogenetics research
- Neuroscience and Neural Engineering
- Conducting polymers and applications
- Electronic and Structural Properties of Oxides
- Transition Metal Oxide Nanomaterials
- Organic Light-Emitting Diodes Research
- Chalcogenide Semiconductor Thin Films
- Gas Sensing Nanomaterials and Sensors
- Graphene research and applications
- Organic Electronics and Photovoltaics
- Technology and Security Systems
- Semiconductor materials and devices
- Heat Transfer and Optimization
- Advancements in Semiconductor Devices and Circuit Design
- Concrete and Cement Materials Research
- Heat Transfer and Boiling Studies
- Geoscience and Mining Technology
- Advanced Decision-Making Techniques
- Advanced Algorithms and Applications
- Nanowire Synthesis and Applications
Tianjin University of Technology
2017-2025
Fujian Normal University
2023
Jiangxi University of Science and Technology
2020
Sanjiang University
2012
An artificial nociceptor, as a critical and special bionic receptor, plays key role in bioelectronic device that detects stimuli provides warnings. However, fully exploiting applications remains major challenge due to the lack of methods implementing basic nociceptor functions nociceptive blockade single device. In this work, we developed Pt/LiSiO
Abstract The binary electron donor–electron acceptor (D‐A) type conjugated polymers have proven to be efficient dopant‐free hole‐transporting materials (HTMs) for the n‐i‐p perovskite solar cells (PVSCs). However, D‐A terpolymeric HTMs containing two D units are not exploited. Reserving high‐planarity backbone of benzodithiophene (BDT)‐benzodithiophene‐4,8‐dione, 1 ‐A‐D 2 ‐A terpolymers PT‐Cz30, PT‐Cz50, and PT‐Cz70 obtained by side‐chain engineering ternary copolymerization strategy, in...
Both synaptic emulators and brain-like calculation demand an energy-efficient bio-realistic device where two-dimensional materials have been proven as a promising competitor. Lateral memristors based on transfer-free single-crystal MoS2 with single layer grown by chemical vapor deposition (CVD) were fabricated. Here the memristor successfully emulates typical biological behaviors including excitatory/inhibitory post-synaptic current (EPSC/IPSC), spike timing-dependent plasticity (STDP),...
As an emerging 2D-layered semiconductor material, the Bi2O2Se nanosheet has shown great application potential in field of electronics and optoelectronics due to its high carrier mobility, superior air stability, tunable bandgap. However, mechanism controllable synthesis nanosheets is still unclear, further basic research applications are urgently needed photovoltaics. In this paper, were prepared based on "dual-source independent control" method, photodetectors demonstrated Si/SiO2. The...
Negative capacitance field effect transistors made of Hf0.5Zr0.5O2 (HZO) are one the most promising candidates for low-power-density devices because extremely steep subthreshold swing and high open-state currents resulting from addition ferroelectric materials in gate dielectric layer. In this paper, HZO thin films were prepared by magnetron sputtering combined with rapid thermal annealing. Their properties adjusted changing annealing temperature thickness HZO. Two-dimensional MoS2 back-gate...
Transition metal dichalcogenides (TMDCs) especially MoS2, are essential materials that seen as future of the electronics industry going forward. It’s acknowledged annealing is usually required when fabrication...
In this letter, a novel hole transport layer (HTL) of poly-(Nvinylcarbazole) (PVK) doped with poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) was employed in solution processed CH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> NH PbBr quantum dots light-emitting diode (QLED). By optimizing the doping ratio PVK and PTAA, ability could be effectively improved, injection barrier also reduced, which resulted performance enhancement...
Abstract Memristor-based neuromorphic computing is expected to overcome the bottleneck of von Neumann architecture. An artificial synaptic device with continuous conductance variation essential for implementing bioinspired systems. In this work, a memristor based on Pt/LiSiO x /TiN structure developed emulate an synapse, which shows non-volatile multilevel resistance state memory behavior. Moreover, high nonlinearity caused by abrupt changes in set process optimized adjusting initial...
In this letter, we synthesize and characterize a new series of organic/inorganic hybrid quasi-2D perovskites PEA <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (FA) xmlns:xlink="http://www.w3.org/1999/xlink">n–1</sub> Pb xmlns:xlink="http://www.w3.org/1999/xlink">n</sub> I xmlns:xlink="http://www.w3.org/1999/xlink">3n+1</sub> ( <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$n = 2, 3, 5$...
We realized dimensionality-tunable growth of Bi 2 O Se crystals via a novel “cage-confinement” strategy, which the nanowire/nanosheet-based phototransistors exhibited high R ∼ 300 000 and 74 A W −1 , D * 3.9 × 10 12 J 4.0 11 Jones, respectively.
High-density storage and neuromorphic devices based on 2D materials are hindered by large-scale growth. Moreover, the lack of a mature mechanism makes it difficult to obtain high-quality single crystals in materials. In this work, we prepared centimeter-scale crystal α-MoO3via an oxygen assisted substrate-free self-standing growth method constructed high-performance synaptic α-MoO3. The α-MoO3 was developed from periodic bond chain theory. is up 2 cm exhibits high homogeneity crystalline...
Abstract The typical nonlinear and asymmetric response of synaptic memristors based on 2D layered materials to positive negative electrical pulses makes the implementation accurate deep neural networks very challenging. Here, it has been constructed an integrated circuit (IC) process‐compatible array modulatable neuromorphic devices MoS 2 three‐terminal show that switching characteristics this memristor become more gradual symmetric under excitation, yielding up 98% linearity conductance...
Abstract Storage‐class memory and advanced neuromorphic‐related applications place an urgent requirement on large‐scale, highly compacted memristor array. However, crosstalk issue constrains the addressing accuracy effective data scale of current array‐level memristor, which is detrimental to industrial realization. Herein, scalability physical processes Al/AlN/W self‐rectifying are investigated. The devices exhibit improved rectification ratio from 94 2600, switching 286 6099, higher...
Two-dimensional transition metal dichalcogenides have recently attracted much attention owing to their potential applications in flexible, low power electronics and optoelectronic devices. This paper investigated the growth of WSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> films by atmospheric pressure chemical vapor deposition (CVD). The introduction hydrogen reaction chamber helps activate selenization WO...