A5029505486- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Electrochemical Analysis and Applications
- Quantum and electron transport phenomena
- Advanced Surface Polishing Techniques
- Ferroelectric and Piezoelectric Materials
- Anodic Oxide Films and Nanostructures
- Near-Field Optical Microscopy
- Nuclear physics research studies
- Advancements in Semiconductor Devices and Circuit Design
- Conducting polymers and applications
- Electrochemical sensors and biosensors
- Metal and Thin Film Mechanics
- Electrocatalysts for Energy Conversion
- Multiferroics and related materials
- Advanced Photocatalysis Techniques
- Quantum Chromodynamics and Particle Interactions
- GaN-based semiconductor devices and materials
- Diamond and Carbon-based Materials Research
Elizabeth City State University
2024
North Carolina Central University
2016-2023
Umm al-Qura University
2016
George Washington University
2016
Universidad Nacional Autónoma de México
2016
Yeungnam University
2016
Shenzhen University
2016
Shaw University
2010-2012
Fayetteville State University
2012
North Carolina State University
1998-2010
Abstract In this work, we report a wafer-scale and chemical-free fabrication of nickel (Ni) copper (Cu) heteroatomic Cu–Ni thin films using RF magnetron sputtering technique for non-enzymatic glucose sensing application. The as-prepared exhibits excellent electrocatalytic activity toward oxidation with 1.86 μM detection limit in the range 0.01 mM to 20 range. film shows 1.3- 5.4-times higher comparison Cu Ni electrodes, respectively. improved is attributed synergistic effect bimetallic...
The presence and evolution of traps in undoped semi-insulating (SI) InP obtained by high temperature annealing (900 °C for 90 h) poor or rich phosphorus atmosphere has been studied means photoinduced current transient spectroscopy. Six named A1 to A6 having activation energies ranging from 0.2 0.6 eV have detected three samples submitted the same process. differ Fe concentration starting material applied pressure A comparison corresponding spectroscopy spectra shows that among observed...
The electronic structure, formation energy, and thermal stability of nitrogen-vacancy related complexes in silicon have been investigated using density functional theory semi-empirical Hartree-Fock calculations. calculated energies the ground state showed that was not stable, whereas when formed from most followed by a divacancy. free energy changes considered chemical reactions confirmed low compared to latter can form during crystal growth between divacancy also occur upon wafer heating....
The atomic structure, energy, stability, vibrational spectra, and infrared absorption intensities of major intrinsic nitrogen-related defects in nitrogen doped silicon crystals have been investigated using ab initio density functional theory semi-empirical quantum mechanics methods. that are interest nitrogen-vacancy-oxygen complexes which believed to affect oxygen precipitation void formation as well concentration measurement nitrogen-doped silicon. Several chemical reactions involving...
Defect size and density distributions were obtained as a function of depth in nitrogen doped CZ silicon (N-CZ) following Hi–Lo–Hi Lo–Hi annealing, using an oxygen precipitate profiler. The defects also delineated by Wright etching Nomarski optical microscopy on both cleaved bevel polished samples. In addition to the enhanced precipitation absence voids previously reported for N-CZ Si, unexpected mode has been found near annealed wafer surface, just above traditional denuded zone. This...
Platinum is known as the best catalyst for hydrogen evolution reaction (HER) but scarcity and high cost of Pt limit its widespread applicability. Herein, role underlying substrate on HER activity dispersed atoms uncovered. A direct current magnetron sputtering technique utilized to deposit transition metal (TM) thin films W, Ti, Ta substrates extremely low loading (<1.5 at%). The electrocatalytic performance as‐synthesized samples examined in both alkali acidic media. results show that...
Nitrogen segregation and coprecipitation with oxygen in N-doped Czochralski (N-CZ) silicon wafers are investigated as a function of depth based on extended defect structure chemical composition. High resolution nitrogen secondary ion mass spectroscopy imaging revealed strong coupling annealed well “as-grown” N-CZ Si wafers. In both cases, the near-surface regions appeared highly supersaturated N O forming continuum defects initiated by N-O complexes. The stoichiometry profiles were found to...
As aluminum film thickness and feature size fall into nanoscale, drastic abrupt changes in optical electric material properties occur. Reduction of Al beyond a critical results island formation local nanostructure variation. Sputter-deposited thin films on Si wafers were studied the structure grown nanofeatures is characterized. Aluminum has been for variety with reference to thickness. Uniformly distributed nanoparticles diameter 10 30 nm formed silicon surface an aimed average 15nm....
Developing an efficient catalytic system for electrolysis with reduced platinum (Pt) loading while maintaining performance comparable to bulk metal is important decrease costs and improve scalability of the hydrogen fuel economy. Here we report a novel sputter-deposited molybdenum (Mo) thin film extremely low co-loading Pt, where Pt atoms were dispersed on Mo (Ptd-Mo) as electrocatalyst evolution reaction (HER) in either alkaline or acidic media. The Ptd-Mo presents similar activity media,...
TiC/TiN thin films deposited by reactive magnetron sputtering on Si (100) substrates were investigated transmission electron microscopy for microstructure and deep level transient spectroscopy (DLTS) diffusion barrier against copper. TiN at a substrate temperature of 600 °C textured, TiC the same polycrystalline. multilayer also showed characteristics with formation an additional interaction layer. The TiC/TiN/Si determined DLTS results that completely prevented copper into Si.
Defect size distributions in nitrogen-doped Czochralski (N-CZ) silicon wafers were obtained using an oxygen precipitate profiler and Wright-Jenkins etching. These showed unique depth dependence low-high high-low-high cycled N-CZ wafers. Unique phenomena observed include a high defect concentration at the subsurface that decreases within top 2μm of so-called denuded zone. In contrast to N-free CZ Si for which first step annealing dissolves grown-in defects, these appeared be stable Si. As...
The use of the Light-Beam-Induced-Current (LBIC) and Electron-Beam-Induced-Current (EBIC) analysis for characterizing polycrystalline materials can sometimes result in unreasonably high or low recombination velocities at grain boundaries (GBs). In this work, we present a theoretical LBIC expression by taking into account band bending reduced optical transmittance (T) boundary (GB). velocity Vr, diffusion length L minority carriers, potential barriers height (qVg) T GB are determined fitting...
In this paper, we study the localization of an electron in a binary quantum system formed by pair dots (QDs). The traditional theoretical consideration such systems is limited to symmetrical case when QDs double dot (DQD) are assumed identical all respects. model effects breaking QD similarities DQD studying two-dimensional (2D) DQDs as well (DQW). This done solving Schrödinger equation, with parameters chosen describe InAs/GaAs heterostructure. We calculate energy spectrum confinement and...
Possibility for a novel type of sensors detecting nanosized substances (e.g., macromolecules or molecule clusters) through their effects on electron tunneling in double nanoscale semiconductor heterostructure is discussed. We studied spectral distributions localized/delocalized states single quantum well (DQW) with relation to slight asymmetry perturbations. The was modeled by modification the dot shape and confinement potential. Electron energy uncertainty restricted differences between...
Based on the effective-mass concept, we perform Faddeev calculations for a low-lying spectrum of 3[Formula: see text] states in [Formula: text]C nucleus. A three-body potential is used to describe known breaking text]-cluster structure We show that contribution Hamiltonian can be compensated by increasing/decreasing text]-particle free mass. The values are adjusted reproduce experimental data energy dependence effective mass and correlation discussed. coupling between ([Formula: text])...
Growth and characterization of AlN diamond films on the backside a Si (100) wafer integration AlN/diamond heat spreaders into silicon device technology is investigated. film was deposited by pulsed dc reactive magnetron sputtering at 600 °C microwave plasma chemical vapor deposition 900 °C. The were characterized x-ray diffraction transmission electron microscopy for crystalline quality, scanning morphology, infrared thermography spreading characteristics. characteristics with composite...
Electron localization and tunneling in laterally distributed double quantum well (DQW) triple (TQW) are studied. Triangular configuration for the TQWs as various (QW) shapes asymmetry considered. The effect of adding a third to DQW is investigated weakly coupled system. InAs/GaAs DQWs were modeled using single subband effective mass approach with potential simulating strain effect. dynamics TQW over whole spectrum studied by varying inter-dot distances. electron appeared highly sensitive...