A5086581441- 2D Materials and Applications
- Perovskite Materials and Applications
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
- Graphene research and applications
- Quantum Dots Synthesis And Properties
- MXene and MAX Phase Materials
- Advancements in Semiconductor Devices and Circuit Design
- ZnO doping and properties
- Electronic and Structural Properties of Oxides
- Semiconductor materials and interfaces
- Advanced Thermoelectric Materials and Devices
- Quantum and electron transport phenomena
- Gas Sensing Nanomaterials and Sensors
- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Diamond and Carbon-based Materials Research
- Thermal properties of materials
- Physics of Superconductivity and Magnetism
- Magnetic properties of thin films
- Advanced Fiber Laser Technologies
- Ga2O3 and related materials
- Surface and Thin Film Phenomena
- Advanced Condensed Matter Physics
University of Chinese Academy of Sciences
2016-2025
Institute of Semiconductors
2016-2025
Chinese Academy of Sciences
2016-2025
Jiangxi Normal University
2025
National Renewable Energy Laboratory
2012-2013
Southwest Jiaotong University
2013
ExxonMobil (United States)
1994-1995
In halide perovskite solar cells the formation of secondary-phase excess lead iodide (PbI2) has some positive effects on power conversion efficiency (PCE) but can be detrimental to device stability and large hysteresis in voltage sweeps. We converted PbI2 into an inactive (PbI2)2RbCl compound by RbCl doping, which effectively stabilizes phase. obtained a certified PCE 25.6% for FAPbI3 (FA, formamidinium) basis this strategy. Devices retained 96% their original values after 1000 hours shelf...
Abstract Traditional methods of discovering new materials, such as the empirical trial and error method density functional theory (DFT)‐based method, are unable to keep pace with development materials science today due their long cycles, low efficiency, high costs. Accordingly, its computational cost short cycle, machine learning is coupled powerful data processing prediction performance being widely used in material detection, analysis, design. In this article, we discuss basic operational...
Abstract Perovskite light-emitting diodes (PeLEDs) have showed significant progress in recent years; the external quantum efficiency (EQE) of electroluminescence green and red regions has exceeded 20%, but blue lags far behind. Here, a large cation CH 3 2 NH + is added PEA (CsPbBr ) PbBr 4 perovskite to decrease Pb–Br orbit coupling increase bandgap for emission. X-ray diffraction nuclear magnetic resonance results confirmed that EA successfully replaced Cs cations form (Cs 1- x . This...
Abstract The explosive success of graphene opens a new era ultrathin 2D materials. It has been realized that the van der Waals layered materials with atomic and less thickness can not only exist stably, but also exhibit unique technically useful properties including small size effect, surface macro quantum tunnel effect. With extensive research revealing basic optical photophysical materials, series potential applications in devices have continuously demonstrated realized, which immediately...
Abstract 2D elemental layered crystals, such as graphene and black phosphorus (B‐P), have received tremendous attentions due to their rich physical chemical properties. In the applications of nanoelectronic devices, shows super high electronic mobility, but it lacks bandgap which impedes development in logical devices. As an alternative, B‐P mobility up about 1000 cm 2 V −1 s . However, is very unstable degrades rapidly ambient conditions. Orthorhombic arsenic (black arsenic; b‐As) “cousin”...
Multiferroic materials have great potential in non-volatile devices for low-power and ultra-high density information storage, owing to their unique characteristic of coexisting ferroelectric ferromagnetic orders. The effective manipulation intrinsic anisotropy makes it promising control multiple degrees the storage "medium". Here, we discovered intriguing in-plane electrical magnetic anisotropies van der Waals (vdW) multiferroic CuCrP2S6. uniaxial current rectifications, properties magnon...
Abstract Construction of high‐performance organic light‐emitting transistors (OLETs) remains challenging due to the limited desired semiconductor materials. Here, two superior high mobility emissive semiconductors, 2,6‐diphenylanthracene (DPA) and 2,6‐di(2‐naphthyl) anthracene (dNaAnt), are introduced into construction OLETs. By optimizing device geometry for balanced ambipolar efficient charge transport using high‐quality DPA dNaAnt single crystals as active layers, high‐efficiency...
A highly sensitive phototransistor with a large on/off ratio and short photoresponse time is fabricated on CVD grown SnS<sub>2</sub>NSs.
Single-crystalline quasi-2D PbI<sub>2</sub> nanosheets and quasi-1D nanowires, which showed different crystallographic symmetries, were controllably synthesized utilized in flexible photodetectors with excellent mechanical stability durability.
2D InSe/InTe van der Waals heterostructures with a direct band structure and typical type-II alignment, effectively tuned by applying normal strain, are systematically discussed for future optoelectronic devices.
Although the direct or indirect nature of bandgap transition is an essential parameter semiconductors for optoelectronic applications, understanding why some conventional have bandgaps remains ambiguous. In this Letter, we revealed that existence occupied cation d bands a prime element in determining directness through s-d and p-d couplings, which push conduction band energy levels at X- L-valley up, but leaves {\Gamma}-valley state unchanged. This unified theory unambiguously explains...
Abstract The exploration of promising nonlinear optical materials, which allows for the construction high-performance devices in fundamental and industrial applications, has become one fastest-evolving research interests recent decades plays a key role development innovation optics future. Here, by utilizing nonlinearity recently synthesized, two dimensional material AuTe 2 Se 4/3 prepared self-flux method, passively mode-locked fiber laser operating at 1557.53 nm is achieved with 147.7 fs...
Two-dimensional (2D) materials and their related van der Waals heterostructures have attracted considerable interest for fascinating new properties. There are still many challenges in realizing the potential of 2D semiconductors practical (opto)electronics such as signal transmission logic circuit, etc. Herein, we report gate-tunable anti-ambipolar devices on basis few-layer transition metal dichalcogenides (TMDs) to gain higher information storage density. Our study shows that carrier...
Optoelectronic devices based on metal halide perovskites, including solar cells and light-emitting diodes, have attracted tremendous research attention globally in the last decade. Due to their potential achieve high carrier mobilities, organic-inorganic hybrid perovskite materials can enable high-performance, solution-processed field-effect transistors (FETs) for next-generation, low-cost, flexible electronic circuits displays. However, performance of FETs is hampered predominantly by...
Abstract The effective manipulation of excitons is important for the realization exciton-based devices and circuits, doping considered a good strategy to achieve this. While studies have shown that 2D semiconductors are ideal excitonic devices, preparation homogenous substitutional foreign-atom-doped crystals still difficult. Here we report monolayer Sb-doped MoS 2 single via facile chemical vapor deposition method. A B observed in by reflection magnetic circular dichroism spectrum...
2D SnSe<sub>2(1−x)</sub>S<sub>2x</sub> (0 ≤ <italic>x</italic> 1) alloys with continuously tunable band gap range from 1.37 to 2.27 eV are systematically synthesized and utilized in high performance (opto)electronic devices.
Abstract Finding sustainable and renewable energy to replace traditional fossil fuel is critical for reducing greenhouse gas emission avoiding environment pollution. Solar cells that convert of sunlight into electricity offer a viable route solving this issue. At present, halide perovskites are the most potential candidate materials solar cell with considerable power conversion efficiency, whereas their stability remains challenge. In work, we summarize four different key factors influence...
Abstract Ultra-wide band-gap nitrides have huge potential in micro- and optoelectronics due to their tunable wide band-gap, high breakdown field energy density, excellent chemical thermal stability. However, application has been severely hindered by the low p-doping efficiency, which is ascribed ultrahigh acceptor activation originated from valance band maximum. Here, a modulation mode proposed quantum engineering doping method conducted achieve high-efficient p-type ultra-wide nitrides, GaN...
The intentionally designed band alignment of heterostructures and doping engineering are keys to implement device structure design performance optimization. According the theoretical prediction several typical materials among transition metal dichalcogenides (TMDs) group-IV chalcogenides, MoS2 SnSe2 present largest staggered offset. large offset is conducive separation photogenerated carriers, thus /SnSe2 a theoretically ideal candidate for fabricating photodetector, which also verified in...
Quantum emitters are needed for a myriad of applications ranging from quantum sensing to computing. Hexagonal boron nitride (hBN) one the most promising solid-state platforms date due their high brightness and stability possibility spin-photon interface. However, understanding physical origins single-photon (SPEs) is still limited. Here we report dense SPEs in hBN across entire visible spectrum present evidence that these can be well explained by donor-acceptor pairs (DAPs). On basis DAP...
Photodetectors with high polarization sensitivity are in great demand advanced optical communication. Here, we demonstrate that photodetectors based on titanium trisulfide (TiS3) extremely sensitive to polarized light (from visible the infrared), due its reduced in-plane structural symmetry. By density functional theory calculation, TiS3 has a direct bandgap of 1.13 eV. The highest photoresponsivity reaches 2500 A W-1. What is more, selection caused by strong anisotropy leads ratio for...