A5036578987- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Advanced Electron Microscopy Techniques and Applications
- Atomic and Molecular Physics
- Acoustic Wave Resonator Technologies
- Sensor Technology and Measurement Systems
- Electrohydrodynamics and Fluid Dynamics
- Electronic and Structural Properties of Oxides
- Optical Wireless Communication Technologies
- Laser-Plasma Interactions and Diagnostics
- Surface and Thin Film Phenomena
- Power Line Communications and Noise
- Advancements in Photolithography Techniques
- Quantum Information and Cryptography
- Force Microscopy Techniques and Applications
- Laser-Matter Interactions and Applications
- Gas Sensing Nanomaterials and Sensors
- nanoparticles nucleation surface interactions
- Nanowire Synthesis and Applications
- Ga2O3 and related materials
- Theoretical and Computational Physics
- Carbon Nanotubes in Composites
Florida Atlantic University
2020
Universidad de Cádiz
2011-2016
Tata Institute of Fundamental Research
2008-2011
Konkuk University
2010
We report a 43-fold enhancement in the hard x-ray emission (in 150--300 keV range) from copper nanorod arrays (compared to polished Cu surface) when excited by 30-fs, 800-nm laser pulses with an intensity of ${10}^{16}$ W/cm${}^{2}$. The temperature hot electrons that emit x rays is 11 times higher. Significantly, yield found depend on both aspect ratio as well cluster size nanorods. show higher arises enhanced absorption owing extremely high local electric fields around tips....
We report a study of the relative effects dimensional and kinetic constraints on stabilization metastable, polytypic forms metallic silver. show that hexagonal 4H polytype (hitherto observed only in size-constrained systems) can be produced form bulk thin films by suitably slowing down growth kinetics. Further, using extremely slow conditions, we have been successful depositing novel, two-dimensional, metastable (2H) silver, which is highly reactive (easily oxidized) has density 23% lower...
Abstract The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing efficiency of opto-electronic devices. In order overcome this limitation, a proper characterization these is necessary. work nano-beam electron diffraction scanning transmission microscopy mode has been used simultaneously measure strain state and induced GaN/AlN multiple quantum well system.
Ion-induced intermixing and damage is evaluated in GaN/AlN superlattices of quantum dots (QDs) wells (QWs) using 100 keV Ar+ implantation at low temperature (15 K). Despite the similar build up fluences, a significant increase accumulation takes place for QDs high fluences. Elemental depth profiles were fitted with diffusion model, revealing higher efficiency QD superlattices, significantly than QWs. The scaling length local fluence defect concentration understood on basis cascade mixing...
In this work, we have analyzed the effect of intentional carbon doping on molecular beam epitaxy grown In-polar InN epilayers using bromide (CBr4) as dopant source. Hall measurements, high resolution X-ray diffraction, atomic force microscopy, transmission electron secondary ion mass spectrometry, spectroscopic ellipsometry, well photoelectron spectroscopy were employed to characterize influence different concentrations electrical, optical, crystallographic, morphological, and electronic...
The application of a dc voltage to an array copper nanorods causes field evaporation atoms from the tips, resulting in their progressive sharpening and further increase local field. process is self-limited by build-up space charge on nanorod tips. From analysis conductance noise recorded across array, we show that conduction mechanism bears strong analogy with stick-slip problem sliding friction. situ results unprecedented lowering breakdown air over 90%, as compared plane parallel electrodes.
Abstract The distortions present in an electron diffraction pattern can be classified into two categories: one is radially invariant and the other angularly invariant. We report a method to compensate these displacements undergone by features promoted any kind of artifacts generated parallel beam conditions. This approach not aimed at quantifying but only intends aid measurement lattice parameters crystals with significant increase accuracy precision as compared previous approaches. It based...
Ion-induced damage and intermixing was evaluated in InGaN/GaN multi-quantum wells (MQWs) using 35 keV N(+) implantation at room temperature. In situ ion channeling measurements show that builds up with a similar trend for Ga atoms, high threshold amorphization. The extended defects induced during the implantation, basal prismatic stacking faults, are uniformly distributed across quantum well structure. Despite extremely fluences used (up to 4 × 10(16) cm(-2)), InGaN MQWs exhibit stability...
Secure quantum key distribution (QKD) is limited by the Earth's horizon, weather, and turbulence in atmosphere. We will outline analysis, design, early stages of our mobile small unmanned aircraft system (sUAS) free-space optical communication system. This reconfigurable, quantum-secure platform can potentially open up a novel layer that avoid local weather interruptions as well provide substantial reduction turbulence-related loss transmitting above ground level. review design testing...
We present a simple and robust method to acquire quantitative maps of compositional fluctuations in nanostructures from low magnification high-angle annular dark field (HAADF) micrographs calibrated by energy-dispersive X-ray (EDX) spectroscopy scanning transmission electron microscopy (STEM) mode. show that nonuniform background HAADF-STEM can be eliminated, first approximation, use suitable analytic function. The uncertainty probe position when collecting an EDX spectrum renders the...