A5021487572- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Neuroscience and Neural Engineering
- Thin-Film Transistor Technologies
- Ferroelectric and Negative Capacitance Devices
- Transition Metal Oxide Nanomaterials
- Electronic and Structural Properties of Oxides
- Magnetic and transport properties of perovskites and related materials
- Photoreceptor and optogenetics research
- Conducting polymers and applications
Ulsan National Institute of Science and Technology
2021-2025
Peking University
2013
Memristive devices have been explored as electronic synaptic to mimic biological synapses for developing hardware-based neuromorphic computing systems. However, typical oxide memristive suffered from abrupt switching between high and low resistance states, which limits access achieve various conductance states analog devices. Here, we proposed an oxide/suboxide hafnium bilayer device by altering oxygen stoichiometry demonstrate filamentary behavior. The with...
Artificial synaptic devices have been extensively investigated for neuromorphic computing systems, which require behaviors mimicking the biological ones. In particular, a highly linear and symmetric weight update with conductance (or resistance) change potentiation depression operation is one of essential requirements energy-efficient computing; however, it not sufficiently met. this study, memristor Pt/p-LiCoO
Scaling down the charge-trap memory cell for high storage density causes severe reliability issues such as decreased trapped charge density, migration of stored charges to adjacent cells, electrostatic interference between neighboring and gate dielectric breakdown. Therefore, it is highly required explore advanced layer (CTL) having a trap with deep level improved performance reliability. In this study, nonvolatile characteristics are demonstrated using low-temperature atomic deposition...
Beyond the von Neumann architecture, neuromorphic computing attracts considerable attention as an energy-efficient system for data-centric applications. Among various synapse device candidates, a memtransistor with three-terminal structure has been considered to be promising one artificial controllable weight update characteristics and strong immunity disturbance due decoupled write read electrode. In this study, oxygen ion exchange-based electrochemical random-access memory consisting of...
Diffusive memristor-based threshold switching devices are promising candidates for selectors in the crossbar memory architecture. However, reliability and uniformity of primary concerns due to uncontrolled diffusion metal ions solid electrolyte diffusive memristors. In this study, CeO2-based with Ag electrodes were demonstrated have forming-free characteristics. particular, by inserting an amorphous SiO2 layer a selector device, we effectively controlled volatile filament formation that is...
Non-charge-storage-based nonvolatile memory characteristics associated with oxygen ion exchange are demonstrated in a thin-film transistor (TFT) composed of an indium-zinc oxide (IZO) channel and oxygen-deficient HfO2–x gate oxide. A increase drain current reduced threshold voltage obtained upon application positive voltage, the opposite negative voltage. The device shows retention properties suitable endurance after repeated operations. Modulation conductance occurs as results between IZO...
The bipolar resistance switching behavior was observed in the epitaxially grown CeO2/La0.7(Sr0.1Ca0.9)0.3MnO3 (CeO2/LSCMO) heterojunctions on SrTiO3 substrate using pulsed laser deposition technology. It found that magnetization of CeO2/LSCMO heterojunction varies with state device when external triggered voltage is higher than set and reset voltages. could be reversibly changed by exerting voltages junction. electron tunneling accompanied a trapping/detrapping process at interface likely...
Synaptic transistor with a hafnium oxide gate insulator and an indium–zinc channel layer exhibited wide range synaptic weight modulation tunable drain current as artificial synapse in neuromorphic systems.
Abstract Tunable multilevel gate oxide capacitance and flat‐band voltage shift characteristics in double‐floating‐gate metal–oxide–semiconductor (DFG‐MOS) capacitors are investigated for non‐volatile memory programmable logic device applications. The DFG‐MOS capacitor with the structure of Ag(control gate)/CeO 2 (upper control oxide)/Al(upper FG)/CeO (lower oxide)/Pt(lower FG)/HfO (tunneling oxide) on n‐Si substrate, that is Ag/CeO /Al/CeO /Pt/HfO /n‐Si, exhibits three states as a result...
Write-once-read-many-times (WORM) memory characteristics with a large window are demonstrated in thin-film transistor (TFT) composed of an indium-gallium-zinc oxide (IGZO) channel and lithium-cobalt (LiCoOx) ion-supplying layer the gate oxide. While device thicker (5 nm) tunneling showing threshold voltage shift (ΔVT) about 5 V by electron charging upon positive (VGS) sweep to +25 V, 2 nm-thick exhibits ΔVT > 20 Li-ion migration from LiCoOx IGZO channel, which can be controlled as multilevel...