A5062442770- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Metal and Thin Film Mechanics
- Advanced Neural Network Applications
- Electronic and Structural Properties of Oxides
- Medical Image Segmentation Techniques
- Heavy Metal Exposure and Toxicity
- Simulation Techniques and Applications
- Heavy metals in environment
- Magnetic and transport properties of perovskites and related materials
- Mercury impact and mitigation studies
- Advanced Image Fusion Techniques
Wenzhou University
2024
Southern Medical University
2024
Dalian University of Technology
2010-2022
Dalian University
2010-2022
Institute of Physics
2005
Chinese Academy of Sciences
2005
Zn O ∕ ( La , Sr ) Al Ta 3 LSAT heterointerface is engineered to control the crystallographic orientation of ZnO films grown by plasmas-assisted molecular beam epitaxy. Lattice-matched in-plane alignment [112¯0]ZnO‖[112¯]LSAT has been realized using Mg modification substrate surface, which confirmed with in situ reflection high-energy electron diffraction observation, and ex characterization x-ray transmission microscopy. The low-temperature deposition high-temperature treatment layer on...
We investigate the structural property and surface morphology of InxGa1−xN films for In compositions ranging from 0.06 to 0.58, which are deposited by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The results x-ray diffraction (XRD) in InGaN confirm that they have excellent c-axis orientation. content epilayers is checked probe microanalysis (EPMA), reveals fractions determined XRD good agreement with EPMA results. Atomic force microscopy...
Highly preferred InN films are deposited on sapphire (0001) substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) without using a buffer layer. The structure, surface morphological and electrical characteristics of investigated in-situ reflection high energy diffraction, x-ray photoelectron spectroscopy, atomic force microscopy Hall effect measurement. quality the as-grown is markedly improved at optimized N2 flux 100 sccm. results...
In this paper, we construct a "Simulation-Evaluation" model to quantitatively analyze the maturity of ICM's D&A system using Petri net and simulate effect caused by decisions on its performance maturity. Specifically, use entropy weight method grey relational analysis calculate weights 7 indicators determine final according minimum principle. addition, establish theoretical based company finance relationship chain "decision variables-simulation parameters-system performance-evaluation...