A5043994299- Graphene research and applications
- 2D Materials and Applications
- Topological Materials and Phenomena
- Photonic Crystals and Applications
- Nanowire Synthesis and Applications
- Quantum Mechanics and Non-Hermitian Physics
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Plasmonic and Surface Plasmon Research
- Advancements in Battery Materials
- Metamaterials and Metasurfaces Applications
- Photonic and Optical Devices
- Mechanical and Optical Resonators
- Quantum and electron transport phenomena
- Advanced Fiber Laser Technologies
- Molecular Junctions and Nanostructures
- Land Use and Ecosystem Services
- Random lasers and scattering media
- Integrated Circuits and Semiconductor Failure Analysis
- Anodic Oxide Films and Nanostructures
- Carbon and Quantum Dots Applications
- Ecology and Conservation Studies
- Thermography and Photoacoustic Techniques
- Photoacoustic and Ultrasonic Imaging
- Near-Field Optical Microscopy
Paul Scherrer Institute
2023-2024
Korea Research Institute of Standards and Science
2021-2024
École Polytechnique Fédérale de Lausanne
2023
Sejong University
2015-2023
Hanbat National University
2016-2023
Samsung (South Korea)
2016
Sogang University
2016
We intentionally generated surface defects in WSe2 using a low energy argon (Ar+) ion-beam. were unable to detect any changes lattice structure through Raman spectroscopy as expected simulation. Meanwhile, atomic force microscopy showed roughened surfaces with high density of large protruding spots. Defect-activated Photoluminescence (PL) revealed binding reduction the W 4f core level indicating significant amounts defect generation within bandgap even at lowest studied 300 eV ion-beam...
Abstract Despite intensive studies on van der Waals heterostructures based two-dimensional layered materials, isotype vdW heterojunctions, which consist of two different semiconductors with the same majority carrier, have received little attention. We demonstrate an n–n field-effect heterojunction device composed multilayer moly ditelluride (MoTe 2 ) and tin disulfide (SnS ). The carrier transport flowing through n-MoTe /n-SnS exhibits a clear rectifying behavior exceeding 10 3 , even at...
Abstract Weak interlayer couplings at 2D van der Waals (vdW) interfaces fundamentally distinguish out‐of‐plane charge flow, the information carrier in vdW‐assembled vertical electronic and optical devices, from in‐plane band transport processes. Here, behavior vdW semiconducting transition metal dichalcogenides (SCTMD) is reported. The measurements demonstrate that, high electric field regime, especially low temperatures, either electron or hole Fowler–Nordheim (FN) tunneling becomes...
The modulation of charge carrier concentration allows us to tune the Fermi level (EF) graphene thanks low electronic density states near EF. introduced metal oxide thin films as well modified transfer process can elaborately maneuver amounts in graphene. self-encapsulation provides a solution overcome stability issues hole dopants. We have manipulated systematic p-n junction structures for or photonic application-compatible doping methods with current semiconducting technology. demonstrated...
Recently, attempts to overcome the physical limits of memory devices have led development promising materials and architectures for next-generation technology. The selector device is one essential ingredients high-density stacked systems. However, complicated constituent deposition conditions thermal degradation are problematic, even with effective materials. Herein, we demonstrate highly stable low-threshold voltages vanadium pentoxide (V2O5) nanosheets synthesized by facile chemical vapor...
The energy band alignments and associated material properties at the contacts between metal two-dimensional (2D) semiconducting transition dichalcogenide (SCTMD) films determine important traits in 2D SCTMD-based electronic optical device applications. In this work, we realize vertical diodes with asymmetric metal–SCTMD contact areas where currents are dominated by contact-limited charge flows transport regimes of Fowler–Nordheim tunneling Schottky emission. With straightforward...
Abstract Phonon dispersion in crystals determines many important material properties, but its measurement usually requires large-scale facilities and is limited to bulk samples. Here, we demonstrate the of full phonon along stacking direction nanoscale systems by using picosecond acoustics. A heterostructure sample was prepared consisting layers hexagonal boron nitride (hBN) sandwiching a thin layer black phosphorus (BP), within which strain pulse generated photoexcitation observed with an...
Scattering-type near-field scanning optical microscopy (s-NSOM) has been beneficial for observing various nano-optical phenomena by overcoming the spatial resolution diffraction limit, creating dispersion, and investigating optoelectronic systems. We used s-NSOM on mono-crystalline silver nanoflakes to selectively decompose tip-launched surface plasmon polariton (SPP) signals suppress undesired geometrical effects arising from tips. Comparing Fourier transform analysis data all edges of...
Topological nature in different areas of physics and electronics has often been characterized controlled through topological invariants depending on the global properties material. The validity bulk–edge correspondence symmetry-related extended to non-Hermitian systems. Correspondingly, value geometric phases, such as Pancharatnam–Berry or Zak under adiabatic quantum deformation process presence conditions, are now significant interest. Here, we explicitly calculate phases one-dimensional...
We demonstrate a monolithically integrated active topological photonic structure. Using unique design with distributed gain/dielectric medium, we selectively address the mode to achieve robust and tunable continuous-wave single-mode emission at room temperature.
We demonstrate a monolithically integrated active topological photonic structure, showing continuous-wave single-mode emission at room temperature. The unique design with distributed III/V and Si nanorods within in the same lattice is fabricated by template-assisted selective epitaxy (TASE) can be easily into circuits.
Abstract In order to fully utilize the excellent electrical properties of graphene as an electrode, it is essential preserve nature pristine graphene. However, structural defects or polymer residues during conventional fabrication steps are inevitable, severely limiting device performance. To overcome these issues, we used a seamless lateral graphene–graphene oxide (GO)-graphene layer fabricated by oxidation scanning probe lithography electrodes MoS 2 field-effect transistor. We demonstrated...
We demonstrate an embedded one-dimensional (1D) topological photonic structure based on a III-V crystal (PhC) lattice silicon. Localized emission is detected from the state which forms at interface between two lattices with different invariants, whereby this single mode centered in bandgap. The 1D beam significantly reduces area compared to 2D structure, together our fabrication platform important metric for future dense integration. shows evidence of lasing telecom O-band threshold around...