A5002647053- Advanced Materials Characterization Techniques
- Electronic and Structural Properties of Oxides
- Ion-surface interactions and analysis
- Semiconductor materials and devices
- Force Microscopy Techniques and Applications
- Surface and Thin Film Phenomena
- Hydrogen embrittlement and corrosion behaviors in metals
- Advanced X-ray and CT Imaging
- Advancements in Semiconductor Devices and Circuit Design
- ZnO doping and properties
- Diamond and Carbon-based Materials Research
- GaN-based semiconductor devices and materials
- Magnetic properties of thin films
- Advanced materials and composites
- Electron and X-Ray Spectroscopy Techniques
- Nanowire Synthesis and Applications
Taiwan Semiconductor Manufacturing Company (Taiwan)
2017-2019
Cameca (United States)
2013-2018
Toshiba (South Korea)
2011
This study compares cross-sectional scanning tunnelling microscopy (XSTM) and atom probe tomography (APT). We use epitaxially grown self-assembled InAs quantum dots (QDs) in GaAs as an exemplary material with which to compare these two nanostructural analysis techniques. studied the composition of wetting layer QDs, performed quantitative comparisons indium concentration profiles measured by each method. show that computational models based on experimental data, are consistent both...
The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited the low doping efficiency of Al. To better understand limiting factors for efficiency, three-dimensional distribution Al atoms host material matrix has been examined on scale using a combination high-resolution transmission electron microscopy (TEM) and atom probe tomography (APT). Although so-called "ALD supercycles" often presented as atomically flat δ-doped layers, reality...
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Journal Article Improving Data Quality in Atom Probe Tomography Get access DJ Larson, Larson CAMECA Instruments Inc., 5500 Nobel Drive, Madison, WI 53711 USA Search for other works by this author on: Oxford Academic Google Scholar TJ Prosa, Prosa D Lawrence, Lawrence SN Strennen, Strennen E Oltman, Oltman I Martin, Martin DA Reinhard, Reinhard A Giddings, Giddings Olson, Olson JH Bunton, Bunton ... Show more RM Ulfig, Ulfig TF Kelly, Kelly J R Goodwin, Goodwin Metallurgical and Materials...
Growth of ultrathin semiconducting nanowires (NWs) and incorporation dopants suitable for future CMOS scaling targets (diameter <20 nm) is a challenge. Limits on dopant in thin NWs have led to concerns about the suitability these structures. In this work, atomic structure thinnest InAs ever reported, down 7 nm diameter, characterized using transmission electron microscopy (TEM) atom probe tomography (APT). It demonstrated that there no fundamental limit Sn into NWs. Additionally,...
Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – 8, 2013.
Journal Article Elemental Quantification and Visualization of GaN Structures using APT SIMS Get access A D Giddings, Giddings CAMECA Instruments Inc., 5500 Nobel Drive, Madison, WI 53711, USA. Search for other works by this author on: Oxford Academic Google Scholar T J Prosa, Prosa Merkulov, Merkulov SAS, 29 Quai des Grésillons, 92622 Gennevilliers Cedex, France. F Stevie, Stevie North Carolina State University, 2410 Campus Shore Raleigh, NC 27695, H G Francois-Saint-Cyr, Francois-Saint-Cyr...