A5054607065- Analog and Mixed-Signal Circuit Design
- CCD and CMOS Imaging Sensors
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Effects in Electronics
- Advanced Memory and Neural Computing
- Sensor Technology and Measurement Systems
- Semiconductor materials and devices
- Low-power high-performance VLSI design
- Advanced MEMS and NEMS Technologies
- VLSI and Analog Circuit Testing
- Inertial Sensor and Navigation
- Neuroscience and Neural Engineering
- Mechanical and Optical Resonators
- Spacecraft Design and Technology
- Geophysics and Sensor Technology
- Image Processing Techniques and Applications
University of Cyprus
2011-2019
This paper presents an innovative CMOS Bandgap Reference Generator topology that leads to improved curvature compensation method over a very wide temperature range. The proposed design was implemented in standard 0.35 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$\mu{\hbox{m}}$</tex></formula> process. is performed by using only poly-silicon resistors. achieved second Op-amp generates CTAT...
This paper presents an alternative approach for angular-rate sensing based on the way that natural vestibular semicircular canals operate, whereby inertial mass of a fluid is used to deform structure upon rotation. The presented gyro has been fabricated in commercially available MEMS process, which allows microfluidic channels be implemented etched glass layers, sandwich bulk-micromachined silicon substrate, containing structures. Measured results obtained from proof-of-concept device...
An architectural performance comparison of bandgap voltage reference variants, designed in a 0.18 μm CMOS process, is performed with respect to single event transients. These are commonly induced microelectronics the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) used explore analog single-event transients and have revealed pulse quenching mechanisms analogue circuits. The different topologies compared, terms cross-section, duration amplitude. measured results,...
Summary A low‐voltage, low‐power, low‐area, wide‐temperature‐range CMOS voltage reference is presented. The proposed circuit achieves a measured temperature drift of 15 ppm/°C for an extremely wide range 190 °C (−60 to 130 °C) while consuming only 4 μW at 0.75 V. It performs high‐order curvature correction the consisting transistors operating in subthreshold and polysilicon resistors, without utilizing any diodes or external components such as compensating capacitors. trade‐off this...
Summary An all‐CMOS, low‐power, wide‐temperature‐range, curvature‐compensated voltage reference is presented. The proposed topology achieves a measured temperature coefficient of 12.9 ppm/°C for wide range 180°C ( − 60 to 120°C) at bias 0.7 V while consuming mere 2.7 μW. high‐order curvature compensation, which leads low‐temperature sensitivity the voltage, performed using new, simple, but efficient methodology. non‐linearities an N‐type metal‐oxide‐semiconductor (NMOS) device operated in...
The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. assessment supported by measured results total ionization dose and single event transient radiation-induced effects under γ -rays, X-rays, protons heavy ions (silicon, krypton xenon). A high irradiation with different sources was used to evaluate the proposed topologies a wide range applications operating in harsh environments similar environment. custom designed integrated (IC) utilize only...
A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed circuit exhibits a deviation of 0.8mV for 3-MeV protons total ionization dose 2Mrad and 3.8mV 10-keV X-rays 4Mrad while being biased at the nominal supply 0.75V during X-ray irradiation. In addition, consumes only 4μW measured Temperature Drift 15ppm/°C range 190°C (−60°C to 130°C) 0.75V. It utilizes transistors, operating in subthreshold regime, poly-silicon resistors without using any...
An all-subthreshold CMOS Voltage Reference architecture is presented, which achieves 3 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rd</sup> order curvature compensation over a wide temperature range. The simulated performance of the proposed with supply voltage 0.75V 2 ppm/°C, range 190 °C (-45 to 145 °C). high performed using non-linearities an NMOS device, operated in subthreshold, combined low-temperature-coefficient poly resistors and...
We present a micropower QCIF image sensor fabricated in 0.18μm CMOS technology. Low-power operation is achieved through system-on-chip design methodology optimizing from device to architecture, yielding 3-pin autonomous system. Supply voltage and reference are scaled down 1.0V 400mV, respectively. Compared previous work, this imager consumes 42% less energy per pixel.