A5078926037- Semiconductor materials and devices
- Copper Interconnects and Reliability
- Graphene research and applications
- Antenna Design and Analysis
- RFID technology advancements
- Semiconductor materials and interfaces
University of South Florida
2021-2025
Abstract Electromigration in metal interconnects remains a significant challenge the continued scaling of integrated circuits towards ever‐smaller single‐nanometer nodes. Conventional damascene architectures barrier/liner layers and conducting cause inevitable compromises between device performance feature dimensions. In contrast to contemporary materials (e.g., Co, Ta, Ru), an ultrathin passivation layer that can effectively mitigate electromigration is needed. At ultimate atomically‐thin...
Ångström-thin hexagonal boron nitride (hBN) is a highly promising barrier/liner dielectric material for passivating electrical interconnects in ultra-scaled integrated circuits (ICs). In article number 2100002, Michael Cai Wang and co-workers present novel approach to mitigating electromigration nanoscale copper interconnects. Significant improvements the breakdown current density operating lifetime are observed hBN-passivated interconnects, paving way further single-nanometer node scaling...