A5061060173- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Metal and Thin Film Mechanics
- Photocathodes and Microchannel Plates
- ZnO doping and properties
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Plant Growth and Agriculture Techniques
- Silicon and Solar Cell Technologies
- Microbial Metabolites in Food Biotechnology
- Semiconductor Quantum Structures and Devices
- Silicon Nanostructures and Photoluminescence
- Agricultural Science and Fertilization
Xidian University
2023-2024
Beijing Solar Energy Research Institute
2023
In this work, we report on the high-performance p-GaN/InGaN/AlN multi-heterostructure p-channel metal–semiconductor field effect transistors (MESFETs) with energy-band modulated quantum well-like InGaN channel and low work function metal tungsten (W) as gate material. A negative threshold voltage (VTH) of −0.35 V is achieved by precisely controlling self-aligned etching depth at active region. Benefiting from enhanced hole confinement, ION/IOFF ratio subthreshold swing fabricated-channel...
In this work, the electrical properties of Ga2O3 Schottky barrier diodes (SBDs) using W/Au as metal were investigated. Due to 450 °C post-anode annealing (PAA), reduced oxygen vacancy defects on β-Ga2O3 surface resulted in improvement forward characteristics diode, and breakdown voltage was significantly enhanced, increasing by 56.25% from 400 V 625 after PAA treatment. Additionally, temperature dependence heights ideality factors analyzed thermionic emission (TE) model combined with a...
In this work, we investigate the performance improvement of N-polar AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) by inversion hole injection layer from to Ga-polar. The influence different points on and energy band DUV LED is systematically studied, principle explained in detail through analysis band. Furthermore, according simulation results practical application, an appropriate point selected. Under current 120 mA, with polarity layer, light output power LEDs increases...
In this work, we propose a novel structure for nonpolar (10-10)-plane InGaN-based light-emitting diode (LED) using lateral p-type Al0.2Ga0.8N/GaN superlattice as the hole injection layer. The main objective is to increase concentration and facilitate vertical injection. LED lacks polarization along growth plane (10-10), but direction [0001] exhibits strong polarization. Therefore, structure, which periodic direction, induces net charges at GaN/Al0.2Ga0.8N interface, resulting in increased...