We put forward and present a demonstration of an actively controlled optical beam steering wireless communication (OWC) system based on integrated steerable phased array (OPA). theoretically experimentally analyze the emitted full-width-half-maximum (FWHM) divergence angle field-of-view (FOV) proposed OPA. Experimental results show that can be achieved over range 17° with minimum FWHM 1.49°. Besides, OPA chip design, forming optimization, packaging, as well temperature stabilization are also...

In this work, we demonstrate a novel top-illuminated avalanche photodiode (APD) with high-speed and wide dynamic range performance for coherent lidar applications, which needs simultaneous processing of weak light reflections from the object strong optical local-oscillator (LO) signal at receiving end. By taking advantage partially depleted p-type <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga...

In this work, we demonstrate a novel <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.52</sub> Al xmlns:xlink="http://www.w3.org/1999/xlink">0.48</sub> As based top-illuminated avalanche photodiode (APD), designed to circumvent the problem of serious bandwidth degradation under high gain (>100) and power operation significantly enhance dynamic range in established frequency modulated continuous wave (FMCW) lidar system. our APD design, carriers...

In this work, a novel In_0.52Al_0.48As based top-illuminated avalanche photodiode (APD) is demonstrated. By combining the composite charge-layer design with special p-side up etched mesa structure to zero electric (E)-field at periphery of APD&#x0027;s multiplication (M-) layer, edge breakdown phenomenon can be eliminated. This in turn leads simultaneous high-speed, high-saturation-power, high responsivity, and low-dark current performance characteristics our APDs, which...

This work presents a novel scheme for 4-dimensional (D) frequency modulated continuous wave (FMCW) LiDAR, which demonstrates an unprecedentedly high velocity sensitivity. is achieved by utilizing the driving waveform to minimize phase noise originating from distributed feedback (DFB) laser during wavelength sweeping process on transmitting side, while receiving end, we use combination of self-injection-locked oscillator (SILO) and avalanche photodiode (APD) with cascaded multiplication...

We propose and demonstrate an actively-controlled optical-beam-steering optical-wireless-communication (OWC) system using integrated optical-phased-array (OPA). numerically experimentally evaluate field-of-view (FOV), beam divergence angle bit-error-rate (BER) performance of the emitted optical signal.

We demonstrate a top-illuminated high-speed uni-traveling carrier photodiode (UTC-PD) with novel design in the p-type absorber, which can effectively shorten photon absorption depth at telecommunication wavelengths (1.31~1.55 μm) and further enhance bandwidth-efficiency product of UTC-PD. In our proposed new UTC-PD structure, In0.53Ga0.47As layer is replaced by type-II GaAs0.5Sb0.5 (p)/In0.53Ga0.47As (i) hybrid absorber. Due to narrowing bandgap enhancement photo-absorption process interface...

In this work, we demonstrate the high-power and high-responsivity performance of dual multiplication (M-) layers in <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.52</sub> Al xmlns:xlink="http://www.w3.org/1999/xlink">0.48</sub> As based avalanche photodiode (APD). The M-layer design our APD structure effectively constrains process to a thin high-field region rather than whole thick M-layer. It thus minimizes space charge effect (SCE) within...

We demonstrate a novel avalanche photodiode (APD) design which fundamentally relaxes the trade-off between responsivity and saturation-current performance at receiver end in coherent system. Our triple In0.52Al0.48As based multiplication (M-) layers with stepped electric (E-) field inside has more pronounced process significantly less effective critical-field than dual M-layer. Reduced E-field active M-layers ensures stronger allocation to thick absorption-layer smaller breakdown voltage...

In this work, a novel top-illuminated avalanche photodiode (APD) with <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.52</sub> Al xmlns:xlink="http://www.w3.org/1999/xlink">0.48</sub> As multiplication (M-) layer is demonstrated. The cascaded M-layer design combined the unique p-side up mesa structure allows relaxation of fundamental trade-off between gain-bandwidth product and dark current. This leads to simultaneous high-responsivity,...

The enhancement in responsivity of photodiodes (PDs) or avalanche (APDs) with the traditional flip-chip bonding package usually comes at expense degradation optical-to-electrical (O-E) bandwidth due to increase parasitic capacitance. In this work, we demonstrate backside-illuminated In0.52Al0.48As based APDs novel packaging designed relax fundamental trade-off. inductance induced peak measured O-E frequency response these well-designed and well-packaged APDs, which can be observed around its...

We demonstrate a novel optical phase shifter with bipolar junction transistor (BJT) type of device structure based on the silicon photonics foundry platform. By operating such in saturation mode, we obtain measured output IEC-VEC characteristics very similar to those an ideal diode, which has nearly zero turn-on voltage and extremely small differential resistance. The huge amount injected current under swing (0.1 V) operation window makes it possible significant plasma induced change...

In this work, we demonstrate In0.52Al0.48As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, a partially depleted p-type In0.53Ga0.47As absorber layer thin (M-) (60 88 nm), exhibit optical-to-electrical bandwidth (16 GHz) high responsivity (2.5 A/W) under strong light illumination (around 1 mW). The measured bias dependent 3-dB O-E was pinned at 16 GHz without any...

A 4-D FMCW LiDAR is demonstrated. In comparison to the traditional p-i-n PD in its receiver-side, cascaded M-layers APDs provide a better quality of images with unprecedented high velocity- sensitivity (5µm/sec) for slow-moving objects.

A novel technique is demonstrated for suppressing the relative intensity noise (RIN) and enhancing high-speed transmission performance of 850 nm vertical-cavity surface emitting lasers (VCSELs). The orthogonal polarization suppression ratio (OPSR) top-emitting VCSELs with rectangular shaped mesas can be greatly enhanced by electroplating a copper substrate onto backside, without any degradation in slope efficiency (output power). enhancement OPSR results significant reduction RIN (around...

APDs with multiple multiplication-layers and flip-chip bonding package is demonstrated. It exhibits wide 3-dB bandwidths (4.8GHz), high responsivity (10.7A/W), saturation current (>4.3mA) at 0.9V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">br</inf> . Using this device, we obtain superior quality of 4-D images to that p-i-n PD in FWCW LiDAR system.

In this work, a novel design for the electrodes in near quasi-single-mode (QSM) vertical-cavity surface-emitting laser (VCSEL) array with Zn-diffusion apertures inside is demonstrated to produce an effective improvement high-speed data transmission performance. By separating compact 2×2 coupled VCSEL into two parts, one pure dc current injection and other large ac signal modulation, significant enhancement performance can be observed. Compared single electrode reference, which parallels 4...

Integrated photonics provides a path for miniaturization of an optical system to compact chip scale and offers reconfigurability by the integration active components. Here we report chip-scale reconfigurable scan lens based on phased array, consisting 30 actively controlled elements InP integrated photonic platform. By configuring phase shifters, show scanning nearly diffraction-limited focused spot with full width at half maximum size down 2.7 µm wavelength 1550 nm. We demonstrate key...

Novel microring based optical phase-shifters on Si-photonic platforms for microwave photonic applications are demonstrated. By using an add-drop structure in combination with additional multimode interferometer (MMI), pure phase modulation ultrahigh efficiency can be realized. Comparison is made to the reference all-pass ring design both same radius (5 μm) and coupling coefficient (κ: ∼0.2). The demonstrated minimizes residual amplitude (0.9 vs. 1.8 dB) nearly 2π shifting over a wide window...

We demonstrate In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Al xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">1-x-y</sub> As based electro-absorption modulated DFB laser at 1.3 μm wavelength on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening 32Gbit/sec.

A three-port optical phase-shifter and Mach-Zehnder modulator (MZM) based on PNP-type bipolar junction transistor (BJT) is demonstrated. Significant plasma (injected carrier) induced changes of the refractive index for waveguide become possible with an extremely small driving-voltage a compact device size during operation this BJT between saturation forward active modes. Devices standard MZM structure foot-print (0.5 mm) exhibit moderate insertion loss (2 dB), V <sub...

We demonstrate novel APDs with multiple multiplication-layers. With optimized charge doping, it exhibits a low $\mathrm{V}_{\mathrm{pt}}$ and keeps an invariant $\mathrm{V}_{\mathrm{br}}$, which minimizes space-charge screening device heating, respectively. High saturation-current (12.8mA) high-quality 3-D images in FWCW lidar system are achieved using this device.