A5046245230- Semiconductor materials and devices
- Ferroelectric and Piezoelectric Materials
- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
- Dielectric properties of ceramics
- Electronic and Structural Properties of Oxides
- Semiconductor materials and interfaces
- Graphene research and applications
- Catalytic Processes in Materials Science
- Multiferroics and related materials
- Copper Interconnects and Reliability
- ZnO doping and properties
- Microwave Dielectric Ceramics Synthesis
- Ga2O3 and related materials
- Advancements in Semiconductor Devices and Circuit Design
- 2D Materials and Applications
- Metal and Thin Film Mechanics
- Electrical and Thermal Properties of Materials
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Diamond and Carbon-based Materials Research
- Molecular Junctions and Nanostructures
- Luminescence Properties of Advanced Materials
- Graphene and Nanomaterials Applications
- Electron and X-Ray Spectroscopy Techniques
Institute for Microelectronics and Microsystems
2016-2025
Consorzio Roma Ricerche
2011-2020
National Academies of Sciences, Engineering, and Medicine
2015
Consorzio Catania Ricerche
2010
University of Catania
1999-2010
Kista Photonics Research Center
2010
Istituto Nazionale di Fisica Nucleare, Sezione di Catania
2003-2010
National Interuniversity Consortium of Materials Science and Technology
2009
Centre National de la Recherche Scientifique
2006
Institute of Inorganic Methodologies and Plasmas
2005
Wide band gap semiconductors, and in particular silicon carbide (4H-SiC) gallium nitride (GaN), are very promising materials for the next generation of power electronics, to guarantee an improved energy efficiency devices modules. As a matter fact, last decade intensive academic industrial research efforts have resulted demonstration both 4H-SiC MOSFETs GaN HEMTs exhibiting /Ron performances well beyond limits. In this paper, some present scientific challenges SiC technology reviewed....
Recently, giant carrier mobility μ (>10(5) cm(2) V(-1) s(-1)) and micrometer electron mean free path (l) have been measured in suspended graphene or encapsulated between inert ultraflat BN layers. Much lower values (10000-20000 are typically reported on common substrates (SiO(2), SiC) used for device fabrication. The debate the factors limiting is still open with charged impurities (CI) resonant scatterers (RS) indicated as most probable candidates. As a matter of fact, inhomogeneous...
In this paper, the transport properties of alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC) were studied. The morphology implanted 4H-SiC was controlled using a capping layer during post-implantation activation annealing at 1700 °C. different morphological conditions do not affect macroscopic electrical SiC (such as sheet resistance or mobility). On other hand, improved allows us to achieve flatter surface and lower specific contact resistance. temperature...
This letter reports on the negative charge trapping in Al2O3 thin films grown by atomic layer deposition onto oxidized silicon carbide (4H-SiC). The exhibited a permittivity of 8.4, breakdown field 9.2 MV/cm and small hysteresis under moderate bias cycles. However, severe electron inside film (1 × 1012 cm−2) occurs upon high positive stress (>10V). Capacitance-voltage measurements at different temperatures conditions have been used to determine an activation energy 0.1eV. results...
In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) $Al_{2}O_{3}$ and $HfO_{2}$ on Au-supported monolayer (1L) $MoS_{2}$ is investigated, providing an insight nucleation mechanisms in early stages ALD process. A preliminary multiscale characterization large area 1L-$MoS_{2}$ exfoliated sputter-grown Au/Ni revealed almost conformal membrane with Au topography occurrence strain variations at nanoscale. Ab-initio DFT calculations $MoS_{2}$/Au(111) interface showed a...
Nucleation phenomena occurring on hexagonal silicon carbide (4H-SiC) surface during the early stages of plasma-enhanced atomic layer deposition (PE-ALD) high-κ aluminum oxide (Al2O3) and hafnium (HfO2) were systematically studied. Atomic force microscopy (AFM) conductive AFM analyses revealed evolution film morphology uniformity insulating behavior upon increasing number PE-ALD cycles. In particular, a nonuniform was observed after nucleation stages. The use in situ spectroscopic...
This paper reports on the evolution of structural and electrical proprieties Au/Ni contacts to p-type gallium nitride (GaN) upon thermal treatments. Annealing metals in an oxidizing atmosphere (N2/O2) led better characteristics, terms specific contact resistance (ρc), with respect non-reacting ambient (Ar). The metal structures formation a NiO layer both at sample surface interface p-GaN were monitored by several techniques such as transmission electron microscopy (TEM), x-ray diffraction...
Zn-doped TiO2 nanofibers shelled with ZnO hierarchical nanoarchitectures have been fabricated combining electrospinning of (anatase) and metal–organic chemical vapor deposition (MOCVD) ZnO. The proposed hybrid approach has proven suitable for tailoring both the morphology external shell as well crystal structure core. It found that Zn dopant is incorporated in calcined electrospun without any evidence aggregates. Effects different doping levels fibers scrutinized morphological, structural,...
Studying the temperature dependence of electrical properties Ohmic contacts formed on ion-implanted SiC layers is fundamental to understand and predict behaviour practical devices. This paper reports characterization, as a function temperature, Ni-based contacts, simultaneously both n- or p-type implanted 4H-SiC. A structural analysis showed formation Ni2Si phase after an annealing leading behaviour. The temperature-dependence specific contact resistance indicated that thermionic field...
High-quality thin insulating films on graphene (Gr) are essential for field-effect transistors (FETs) and other electronics applications of this material. Atomic layer deposition (ALD) is the method choice to deposit high-κ dielectrics with excellent thickness uniformity conformal coverage. However, start growth sp2 Gr surface, a chemical prefunctionalization or physical seed required, which can effect, some extent, electrical properties Gr. In paper, we report detailed morphological,...
The electronic properties of the graphene (Gr) Schottky junction with an Al0.22Ga0.78N/GaN heterostructure on silicon have been investigated, both by experiment and use ab initio DFT calculations. A peculiarly high n-type doping (1.1 × 1013 cm–2), observed for Gr in contact AlGaN, was explained combined effect Fermi level pinning AlGaN surface states charge transfer. Spatially uniform current injection across Gr/AlGaN/GaN heterojunction revealed nanoscale resolution conductive atomic force...
Ordered homogeneous arrays of copper (II) oxide nanotubes have been fabricated through an MOCVD template route. SEM images the CuO nanotubes, after removing template, indicate formation well-ordered nanotube arrays. There is evidence that are opened on both sides.
Nanoscale imaging of the electrical properties CaCu3Ti4O12 ceramics has been performed using scanning impedance microscopy. Two kinds inhomogeneity are detected, namely, depletion layers at grain boundaries and calcium titanate inclusions, both which more resistive than bulk grains. Energy filtered transmission electron microscopy was used to estimate chemical composition inclusions.
This letter reports on epitaxial nickel oxide (NiO) films grown by metal-organic chemichal vapor deposition AlGaN/GaN heterostructures. The material was epitaxial, free from voids and exhibited a permittivity of 11.7, close to bulk NiO. approach is advantageous with respect other methods such as the thermal oxidation Ni due better reproducibility film quality. A reduction leakage current in Schottky diodes an interfacial NiO layer has been observed described using...
In this paper, the nanoscale structural and electrical evolution of Ta- Ti-based contacts was investigated employing several analytical techniques. A correlation between improvement quality formation Al-alloyed phases (TaAl3 or TiAl3) during annealing observed. However, while for Ti/Al an Ohmic behavior with a contact resistance Rc ∼ 1.8 Ω mm has been achieved after at 500 °C, Ta/Al exhibited higher (Rc 36.3 Ω·mm) even 700 °C. The different behaviour explained considering interface...
Abstract Atomic layer deposition (ALD) is the method of choice to obtain uniform insulating films on graphene for device applications. Owing lack out‐of‐plane bonds in sp 2 lattice graphene, nucleation ALD layers typically promoted by functionalization treatments or predeposition a seed layer, which, turn, can adversely affect electrical properties. Hence, dielectrics without prefunctionalization and would be highly desirable. In this work, Al O 3 are obtained seed‐layer‐free thermal at 250...