A5057127760- Magnetic Properties and Synthesis of Ferrites
- Advanced Photocatalysis Techniques
- Multiferroics and related materials
- Magnetic properties of thin films
- Silicon Carbide Semiconductor Technologies
- Metallic Glasses and Amorphous Alloys
- Semiconductor materials and devices
- Ammonia Synthesis and Nitrogen Reduction
- Advancements in Semiconductor Devices and Circuit Design
- Analog and Mixed-Signal Circuit Design
- Electromagnetic wave absorption materials
- Advanced Nanomaterials in Catalysis
- Magnetic Properties of Alloys
- Magnetic Properties and Applications
- Low-power high-performance VLSI design
- Graphene research and applications
- Photonic and Optical Devices
- DNA and Nucleic Acid Chemistry
- Innovations in Concrete and Construction Materials
- GaN-based semiconductor devices and materials
- Electromagnetic Compatibility and Noise Suppression
- Parallel Computing and Optimization Techniques
- Electrocatalysts for Energy Conversion
- Advanced Fiber Optic Sensors
- Advancements in PLL and VCO Technologies
North Minzu University
2024-2025
State Ethnic Affairs Commission
2024-2025
Guangzhou University
2024
University of Electronic Science and Technology of China
2006-2023
Monash University
2019-2021
Materials Science & Engineering
2019-2020
National Engineering Research Center of Electromagnetic Radiation Control Materials
2010-2012
NH 2 -MIL-88B(Fe) acted as both electron acceptor and donor, accelerating the transfer enhancing photocatalytic hydrogen production efficiency of composite system.
A new SOI high-voltage device with a step thickness sustained voltage layer (ST SOI) is proposed. The electric field in the drift region modulated, and that buried enhanced by variable-thickness layer, resulting enhancement of breakdown (BV). BV for ST two steps twice as high conventional SOI, maintaining low on-resistance (Ron).
A new design concept is proposed to eliminate the substrate-assisted depletion effect in a super-junction (SJ) LDMOS. The key feature of that non-uniform N-buried layer implemented which compensates for charge interaction between P-substrate and SJ region, realising high breakdown voltage (>700 V) ultra-low on-resistance. Furthermore, device compatible with smart power technology.
A novel 3D tri-gate 4H-SiC MESFET structure is proposed for high-power RF applications. In comparison with the conventional structure, improved saturation drain current obtained owing to formation of a vertical channel, which induces device equivalent channel width increase. The output power density t=2 µm, a=0.4 µm and w=0.6 15.5 W/mm compared 4.2 one yet it maintains almost same cutoff frequency (fT) maximum oscillation (fmax).
First principles density functional calculations are used to study the uniaxial strain effects on energy band structures of single- and multi-walled boron nitride nanotubes. Simulation results show that tensile induces a slight decrease in gaps, while small large compressive strains induce increases decreases respectively. The maximum change gap is ~0.5 eV. all nanotubes not sensitive strain, which means could be blue UV light-emitting devices under strain.
A low turnoff loss snapback-free reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with a novel collector structure is demonstrated. The n-collector partially enclosed by floating p-layer (p-float) which acts as barrier for electrons at current in the forward conduction state and contributes to characteristics. p-float makes proposed device feature double n-p-n electron extraction paths, n-drift/p-float/n-collector (n-p-n1, n-drift emitter) n-buffer/p-float/n-collector (n-p-n2,...
Bimetallic oxide catalysts are gradually replacing noble metal for photocatalytic hydrogen production. In this study, a two-step method was used to synthesize CoMoO4 with rod-like structure. CuBr is catalytic base synthesis graphdiyne material. The anchoring the stickshaped structure through solvent thermal as booster obtain new composite photocatalyst. It found that best analysis of CoMoO4/ 187.47 μmol. Compared and graphdiyne, they increased by 2.9 times 41.7 respectively. addition...
A novel high performance carrier stored trench bipolar transistor (CSTBT) with a p-type buried layer (PBL-CSTBT) is proposed. The of the structure formed by ion implantation at bottom after partial etching Pbase/Ncs and fabrication process fully compatible conventional CSTBT (C-CSTBT) structure. In comparison C-CSTBT without layer, offers not only breakdown voltage, but also improved Eoff-Vce(on) trade-off characteristics.
Motivation: Identifying the dynamic changes of brain microenvironment in patients with moyamoya disease (MMD) would improve management and treatment. Goal(s): To explore alteration amide proton transfer weighted (APTw) signal MMD during follow-up. Approach: who had not received revascularization were prospectively included. All underwent cranial computed tomography perfusion (CTP) APTw imaging at baseline Results: bilateral internal carotid arteries blood supply area significantly increased...