- Electron and X-Ray Spectroscopy Techniques
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- X-ray Spectroscopy and Fluorescence Analysis
- Iron oxide chemistry and applications
- Ferroelectric and Piezoelectric Materials
- Machine Learning in Materials Science
- Ga2O3 and related materials
- Surface and Thin Film Phenomena
- Advancements in Photolithography Techniques
- Silicon Carbide Semiconductor Technologies
- Mine drainage and remediation techniques
- Advanced Photocatalysis Techniques
- Nanofabrication and Lithography Techniques
- Advanced Memory and Neural Computing
- Gas Sensing Nanomaterials and Sensors
- Electrocatalysts for Energy Conversion
- Plasma Diagnostics and Applications
- Clay minerals and soil interactions
- Mineralogy and Gemology Studies
- Magnetic and transport properties of perovskites and related materials
- Copper-based nanomaterials and applications
- Ferroelectric and Negative Capacitance Devices
- Magnetic Properties and Synthesis of Ferrites
- Minerals Flotation and Separation Techniques
Laboratoire Interdisciplinaire Carnot de Bourgogne
2018-2025
Université de Bourgogne
2019-2025
Université Grenoble Alpes
2022-2024
CEA LETI
2022-2024
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2022-2024
Centre National de la Recherche Scientifique
2018-2023
Université Bourgogne Franche-Comté
2018-2022
Applied Physical Electronics (United States)
2022
CEA Grenoble
2022
Maison des Sciences de l’Homme de Dijon
2019
In this work, we determine the electronic structure and charge carrier dynamics of α-Fe2O3(0001) ultrathin film deposited on Pt(111) as a function water pressure by combined near ambient pressure–time-resolved photoelectron spectroscopy (NAP-TR-PES) measurements DFT calculations. Under ultrahigh vacuum (UHV) α-Fe2O3 exhibits expected typical n-type semiconductor behavior with surface photovoltage (SPV) shift 31 meV. Surprisingly, when exposed to completely different comportment appears. At...
We studied the growth of epitaxial ferroelectric layers BaTiO3/Pt(001) in framework solar water splitting. The stoichiometry, that is, Ti/Ba ratio, appears as a crucial parameter not only for crystallographic structure but also photocurrent generation when sample is used photoanode. established an electrochemical poling method using modulated potential, without altering to control electric polarization. Importantly, we show photoanode efficiency improved polarization film oriented toward...
Monochromatic Cr Kα radiation (5414.8 eV) was used to acquire high-energy photoelectron spectroscopy (HAXPES) data on pure Mo and bulk MoSe2 compound with special attention paid binding energy scale correction quantification. The reported spectra include a survey scan high-resolution 2s, 2p1/2, 2p3/2, 3d, 3p1/2, 3p3/2, 3s, 4s, Mo4p, Se2s, Se 3d core-levels. will be useful as reference core-level for HAXPES studies molybdenum its compounds.
Density functional theory calculations are performed to give a thorough description of structural, energetic, and electronic properties Pt(111)/α-Fe2O3(0001) systems by spin-polarized calculations, accounting for the on-site Coulomb interaction. Toward better understanding interfaces, two terminations α-Fe2O3(0001) surface, namely, single Fe- O3-termination, considered coupled with four possible (top, hcp, fcc, bridge) sites on Pt(111). The effect strain clean hematite surfaces due lattice...
Water adsorption and dissociation on undoped Ti-doped hematite thin films were investigated using near-ambient pressure photoemission DFT calculations. A fine understanding of doping effects is prime importance in the framework photoanode efficiency aqueous conditions. By comparison to pure Fe2O3 surface, Ti(2%)-Fe2O3 surface shows a lower hydroxylation level. We demonstrate that titanium induces wide structural modifications preventing it from reaching full hydroxylation.
In this paper, synchrotron radiation photoemission techniques are used to unravel the pending nature of two Ba 4d components, also observed on 3d lines, and commonly named Ba(α) Ba(β). Investigations were carried out (001) surface epitaxial very thin (≤20 nm) films combined with DFT calculations. Photoelectron diffraction experiments reveal different behaviors for Ba(β) components. While six well-defined features corresponding BaTiO3 bulk structure component, no feature really appears in...
The influence of water on the out-of-plane polarization ${\mathrm{BaTiO}}_{3}$ (BTO) ultrathin films is studied by means density functional theory calculations. adsorption investigated for different coverages both terminations BTO with, each case, all possible states polarization, namely, paraelectric, polarized upward, and downward. We thus demonstrate behavior as a function termination. While ${\mathrm{H}}_{2}\mathrm{O}$ adsorbs only dissociatively BaO termination, with reinforced...
Density functional theory calculations are performed to study the out-of-plane polarisation in BaTiO3 (BTO) thin films epitaxially grown on platinum. Prior any calculation, stability of Pt(001)/BaTiO3(001) structure is thoroughly discussed. In particular, nature Pt/BTO and BTO/vacuum interfaces characterised. The growth BTO shown start with a TiO2 layer while surface termination does not broadly modify stability. Therefore both upper terminations considered when describing ferroelectric...
Monochromatic Cr Kα radiation (5414.8 eV) was used to acquire high-energy photoelectron spectroscopy data on pure W and bulk WSe2 compound. The reported spectra include a survey scan high-resolution 3p1/2, 3p3/2, 3d3/2, 3d5/2, 4s, 4p1/2, 4p3/2, 4d, 4f, Se 2s, 2p1/2, 2p3/2, 3s, 3p core-levels. will be useful as reference core-level for HAXPES studies tungsten its compounds.
Monochromatic Cr Kα radiation (5414.8 eV) was used to acquire high-energy photoelectron spectroscopy data on pure Al. The reported spectra include a survey scan and high-resolution Al 1s, 2s, 2p, O 1s core-levels. will be useful as comparison for the study in this field.
Si3N4 thin film grown by low-pressure chemical vapor deposition was measured high-energy photoelectron spectroscopy using monochromatic Cr Kα (5414.8 eV) radiation. A survey scan and high-resolution spectra of Si 1s, 2s, 2p, N 1s are reported.
A thick alumina sample was analyzed by hard x-ray photoelectron spectroscopy means of a lab-scale spectrometer equipped with Cr Kα (5414.8 eV) excitation source. The reported spectra include survey scan as well Al 1s, 2s, 2p, O and C 1s core-level spectra.
A C-terminated SiC wafer was analyzed by high-energy photoelectron spectroscopy using monochromatic Cr Kα (5414.8 eV) radiation. The data include a survey scan and high-resolution spectra of Si 1s, 2s, 2p, C O 1s core levels.
Aluminum nitride was analyzed by high-energy photoelectron spectroscopy using monochromatic Cr Kα (5414.8 eV) radiation. The reported data include a survey spectrum and high-resolution spectra of Al 1s, 2s, 2p, N O C 1s core levels.
Si (100) wafer was analyzed by high-energy photoelectron spectroscopy (HAXPES) using monochromatic Cr Kα radiation (5414.8 eV). The HAXPES spectra reported here include a survey scan and high-resolution of 1s, 2s, 2p core-levels.
We predict by density functional theory (DFT) calculations structural modifications specific of the paraelectric/ferroelectric transition and demonstrate that they can be tracked experimentally means photoelectron spectroscopy (PES). For BaTiO3, we evidence Ba 4d core-level binding energy shifts conveniently allow tracking for both approaches. DFT reveal different temperature behaviors bulk surface features, which followed PES thanks to shifts. Consistently, our data show such occur at a...