A5012202158- Nanowire Synthesis and Applications
- Thin-Film Transistor Technologies
- Radio Frequency Integrated Circuit Design
- Silicon Nanostructures and Photoluminescence
- Silicon and Solar Cell Technologies
- Microwave Engineering and Waveguides
- Advanced Power Amplifier Design
- GaN-based semiconductor devices and materials
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
- Semiconductor Lasers and Optical Devices
- 3D IC and TSV technologies
- ZnO doping and properties
- solar cell performance optimization
- Microwave and Dielectric Measurement Techniques
- Antenna Design and Analysis
- Advanced Computational Techniques and Applications
- Electrospun Nanofibers in Biomedical Applications
- Analog and Mixed-Signal Circuit Design
- Power Systems and Technologies
- Advancements in PLL and VCO Technologies
- Wireless Body Area Networks
- Additive Manufacturing and 3D Printing Technologies
- Advanced Surface Polishing Techniques
- VLSI and Analog Circuit Testing
University of Science and Technology of China
2023-2024
Institute of Microelectronics
2012-2023
Tsinghua University
2023
Hefei General Machinery Research Institute (China)
2023
Chinese Academy of Sciences
2012-2021
PLA Electronic Engineering Institute
2018-2021
Millimeter-wave (mm-wave) radar is an essential sensor of advanced driver assistance systems and autonomous driving. Its detection requirement extends from traditional long-to-medium range to emerging short ultra-short for surround sensing, which sub-1 meter 40 meters requires a compact low-cost solution with fast chirp generation improve the resolution [1] -[5]. In [2], 3 transmitters (TX) 4 receivers (RX) are utilized create multi-mode transceiver, however its on-board antenna integration...
High performance radial p-n junction solar cells based on silicon nanopillar array were synthesized from p-type substrates and compared with planar cell. These exhibited considerable higher short-circuit current, due to their unique carriers' decoupling mechanism. After the electrode enhancement via light induced plating, a best efficiency of near 12% was achieved for cell, which is better than control
In the work, surface recombination of silicon nanostructures was investigated. Silicon were synthesized using technique silver catalyzed chemical wet etching, and passivation layers SiNx Al2O3 deposited on samples. The thermal atomic layer can conformally cover rough reduce defect density nanostructures. Moreover, negative fixed charge in introduces field effect passivation. lifetime measurement result indicates that offer much better nanostructure than layers. nano-textured solar cells with...
ZnO nanorods (NRs) were synthesized via a two-step hydrothermal method on silicon (Si) nano-textured solar cells. The optical and photovoltaic properties of nanostructures coated with NRs measured discussed. It was found that combined can maximize the light absorption significantly enhance electrode contact carrier transport ability. series resistance reduced from 0.98 Ω to 0.45 Ω, short circuit current density dramatically increased 22.5 mA/cm2 27.9 due incorporation NRs. experimental...
A 6-bit full-span programmable vector-sum phase shifter was presented in this brief. transformer-based matching network is used to match the PPF-based I/Q generator variable gain amplifier-based vector-modulator (VGA-based VM), which eliminates performance degradation due impedance mismatch. The proposed integrated a two-channel transmitter implemented 180-nm CMOS process. program-assisted method select desired (64) states from total 4096 measured of chip, realize highly accurate tuning....
Abstract Silicon nanostructure arrays were synthesized via Ag-catalysed chemical etching on solar cells. In contrast to the traditional in HF/AgNO 3 , new technique used this work produced textures located only front surface of Furthermore, a SiO 2 /SiN X bi-layer was passivate By these optimizations, nanostructure-textured cells' performance improved. The data obtained from are fundamental and has some reference value for future studies.
A design of space using L-band T/R module was introduced. GaN amplifier used to improve the module's performance. The multilayer boards were replace LTCC lower cost module. And cavity structures modified working reliability. fabricated tested in different temperatures.
A two-step maskless method was used to synthesize silicon nanostructures. In the first step, silver nanoparticles were formed through rapid thermal annealing of thin films. The temperature, duration annealing, and initial thickness film jointly determined distribution diameter particles. next nanostructures created using catalyzed etching in HF/H2O2. experiment confirmed that final sizes corresponded diameters Further, nanostructure-textured solar cells manufactured tested....
For the silicon (Si) nanowire (NW) solar cell, though having very low optical reflectance, contact resistance (Rc) is larger and short circuit current (Isc) lower than conventional textured Si cell. It crucial to reduce Rc improve Isc by using necessary methods. ZnO nanorods (NRs) synthesized through a two-step hydrothermal method were used filling gap between nanowire. The photovoltaic properties of coated with NRs measured discussed. was found that combined structures NWs can enhance light...
Light-trapping nanostructures have been widely used for improving solar cells’ performance, but the higher surface recombination and poor electrode contact introduced need to be addressed. In this work, silicon were synthesized via silver-catalyzed etching texturize cells. Atomic-layer-deposited Al2O3 passivated nanotextured A velocity of 126 cm/s was obtained, much lower than 228 SiNX-passivated one. Additionally, open-circuit voltage (VOC) cells improved significantly from 582 610 mV, as...
Abstract A fully differential transmitter front‐end with multistage power amplifiers and a 7‐bit phase shifter were implemented in 180‐nm CMOS process. RC feedback cross‐coupling circuits adopted to improve the stability of amplifiers. For final stage, four‐transistor in‐parallel architecture was used obtain large total gate width, while maintaining compact size relatively small parasitic effects. The measured saturated output ( P sat ) fabricated chip is 21.3−22 dBm, system efficiency...
CMOS power amplifier (PA) has advantages in consumption and integration, while the lower operating voltage limits its output power. An area efficient combiner needs to be designed improve of PA. X-band integrated PA using 65-nm bulk technology was presented this work. The whole consists two differential stages: a one-way drive two-way main amplifier. By employing compactly high-k transformer, occupied small core-area 0.47×0.57mm2, delivered 21.6 dBm measured saturated with 23.6% power-added...
A 6-stage W-band MMIC power amplifier (PA) was designed and implemented, based on T -gate gallium nitride (GaN) devices. The performance of the GaN high-electron-mobility transistor (HEMT) device characterized at first. And then, P a balanced-amplifier topology. High-low impedance micro-strip lines were employed for broadband matching between stages. can obtain high gain output by choosing appropriate impedance. measured saturated ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML"...
a two-stage programmable CMOS variable-gain-amplifier (VGA) was presented. It consists of passive stage, an active stage and inter-stage matching transformer. The gain tuning each VGA can be digitally-controlled, 32/24 states are obtained for the passive/active stage. As result, 768 in total get VGA. proposed implemented 180-nm process integrated into receiver channel. Then digital program used to select desired from measured chip, realize highly accurate tuning. And ultra-low...