A5103180056- Electrocatalysts for Energy Conversion
- Microwave Engineering and Waveguides
- Fuel Cells and Related Materials
- Advanced battery technologies research
- Superconducting and THz Device Technology
- Gyrotron and Vacuum Electronics Research
- Advanced Battery Materials and Technologies
- Thin-Film Transistor Technologies
- Industrial Vision Systems and Defect Detection
- Supercapacitor Materials and Fabrication
- Radio Frequency Integrated Circuit Design
- Acoustic Wave Resonator Technologies
- Electrostatic Discharge in Electronics
- Welding Techniques and Residual Stresses
- Advancements in Battery Materials
- Advanced Photonic Communication Systems
- Silicon Carbide Semiconductor Technologies
- Surface Roughness and Optical Measurements
- Advanced Optical Network Technologies
- Electrochemical Analysis and Applications
- Optical Network Technologies
Shanghai University
2011-2023
Wuhan University of Technology
2008-2022
State Key Laboratory of Millimeter Waves
2012
Southeast University
2012
Accurate online junction temperature detection of high-power insulated gate bipolar transistor (IGBT) modules is necessary for the health management system key equipment. The voltage rise time ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$t_{\mathrm {rv}}$ </tex-math></inline-formula> ) a good sensitive electrical parameter (TSEP), which great significance its accurate extraction. In this article,...
The instability of Pt electrode during EIS measurement was investigated in RDE. Our results show that this unstable phenomenon is mainly reflected on charge transfer resistance (R ct ). range R change exhibits a strong dependence the applied potential. During repeated tests at above 0.8 V, continuously increase as testing time, while double-layer capacitance reduces, implying formation Pt-oxides interface. Furthermore, stability becomes worse higher After experiment for eight times 0.9...
For the matching devices fix gain of latter stage, elementary noise canceling LNAs suffer inferior global power gain. In contrast, this paper presents an ultra-wideband 3.1-10.6 GHz low amplifier, which can save more power, contribute lower figure and provide higher by using a noise-canceling technique, current reuse single on-chip transformer. The amplifier is implemented in 0.18- mum CMOS technology, IC prototype exhibits small signal 16.3 dB over -3 bandwidth 3.5-10.4 GHz, 3.9-5.8 entire...
A microwave substrate integrated waveguide (SIW) filter with compact and novel configuration is presented. The SIW will be used for the integration a frequency multiplier. overall size of 60mm length 40mm width can just enough meet to need Measured results show that stopband rejection more than 45dB, insertion loss less -1dB at passband 7.1-8GHz. Using small-angle lateral coupling, new structure keeps sharp transition characteristic lower sideband like traditional have improved upper sideband.
In this paper, a reliable Wavelength-Division-Multiplexing Passive Optical Network (WDM-PON) system is proposed. It can provide the protection against both feeder fiber failure and distribution failure. When occurs, corresponding switches in OLT ONU switch to link without affecting users normal status. That say, for one independent of other ONUs.
Linearizer is a key component in the millimeter-wave communication system, it plays an important role improving linearity performance of amplifier and quality. At present, development traveling-wave tube (TWTA) linearization technology cannot meet application requirements technology, therefore, research very important. In this paper we propose kind new wide-band analog pre-distortion structure used to improve nonlinear characteristics Ka-band TWTA. The simulation results show that when input...