A5051618038- Graphene research and applications
- Nanowire Synthesis and Applications
- 2D Materials and Applications
- Carbon Nanotubes in Composites
- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Anodic Oxide Films and Nanostructures
- Advanced Sensor and Energy Harvesting Materials
- Supercapacitor Materials and Fabrication
- Quantum Dots Synthesis And Properties
- Advancements in Battery Materials
- Analytical Chemistry and Sensors
- Transition Metal Oxide Nanomaterials
- Conducting polymers and applications
- GaN-based semiconductor devices and materials
- Perovskite Materials and Applications
- Ga2O3 and related materials
- Graphene and Nanomaterials Applications
- Nanopore and Nanochannel Transport Studies
- Advanced battery technologies research
- Advanced Materials and Mechanics
- Photonic and Optical Devices
- Molecular Junctions and Nanostructures
Shanghai Fudan Microelectronics (China)
2022-2024
Fudan University
2018-2024
Shanghai Innovative Research Center of Traditional Chinese Medicine
2022-2024
State Key Laboratory of ASIC and System
2018-2023
North University of China
2020-2022
Dalian University
2021
Dalian University of Technology
2021
Tongji University
2011-2019
National Center for Nanoscience and Technology
2008-2013
Rice University
2009-2010
Abstract In human being’s history, both the Iron Age and Silicon thrived after a matured massive processing technology was developed. Graphene is most recent superior material which could potentially initialize another new Age. However, while being exploited to its full extent, conventional methods fail provide link today’s personalization tide. New should be ushered in. Three-dimensional (3D) printing fills missing linkage between graphene materials digital mainstream. Their alliance...
The emergence of fiber-shaped supercapacitors (FSSs) has led to a revolution in portable and wearable electronic devices. However, obtaining high energy density FSSs for practical applications is still key challenge. This article exhibits facile effective approach directly grow well-aligned three-dimensional vanadium nitride (VN) nanowire arrays (NWAs) on carbon nanotube (CNT) fiber with an ultrahigh specific capacitance 715 mF/cm2 three-electrode system. Benefiting from their intriguing...
Intrinsic graphene is a semimetal or zero bandgap semiconductor, which hinders its applications for nanoelectronics. To develop high-performance nanodevices with graphene, it necessary to open the and precisely control charge carrier type density. In this perspective, we focus on tailoring electronic properties of by noncovalent stacking aromatic molecules through π–π interaction. Different types (functioning as either an electron donor acceptor when stacked graphene) reported in recent...
Increased efforts have recently been devoted to developing high-energy-density flexible supercapacitors for their practical applications in portable and wearable electronics. Although high operating voltages achieved fiber-shaped asymmetric (FASCs), low specific capacitance still restricts the further enhancement of energy density. This article specifies a facile cost-effective method directly grow three-dimensionally well-aligned zinc–nickel-cobalt oxide (ZNCO)@Ni(OH)2 nanowire arrays...
One-dimensional structures of nitrogen-rich carbon nitride are synthesized via a thermal evaporation process. The CN atomic rings (s-triazine and/or tri-s-triazine) present in the precursor remain stable during and vapor transfer. They act as basic building blocks microstructure assembly; thus ensuring high nitrogen content final product.
Fluorescent nanoscale coordination polymers with cubic morphology and long range ordered structure were fabricated exhibited efficient sensing for both nitroaromatic explosive nitromethane due to large surface area volume ratio strong binding affinity molecules.
Research on van der Waals heterostructures based stacked 2D atomic crystals is intense due to their prominent properties and potential applications for flexible transparent electronics optoelectronics. Here, nonvolatile memory devices floating‐gate field‐effect transistors that are with materials reported, where few‐layer black phosphorus acts as channel layer, hexagonal boron nitride tunnel barrier MoS 2 charge trapping layer. Because of the ambipolar behavior phosphorus, electrons holes...
Thermally expanded graphite was functionalized with 4-bromophenyl addends using the in situ diazonium formation procedure, and after mild sonication treatment N,N′-dimethylformamide, thin graphene layers were exfoliated from bulk graphite. These chemically-assisted (CEG) sheets had higher solubility than pristine without any stabilizer additive. More 70% of these soluble flakes less 5 layers. Energy filtered transmission electron microscopy (EFTEM) elemental mapping provided evidence...
The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. fast development of circuits has fueled a rapid growth the study two-dimensional (2D) crystals, which may lead to breakthroughs semiconductor industry. Here we report floating-gate manipulated nonvolatile ambipolar memory from stacked all-2D layers graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) designed...
Abstract The ever‐increasing demands for portable and wearable electronics continue to drive the development of high‐performance fiber‐shaped energy‐storage devices. Metal‐organic frameworks (MOFs) with well‐tunable structures large surface areas hold great potential as precursors templates form porous battery materials. However, date, there are no available reports about fabrication devices on utilization all‐MOF‐derived materials directly grown current collectors. Here, MOF‐derived NiZnCoP...
p–n junctions play an important role in modern semiconductor electronics and optoelectronics, field‐effect transistors are often used for logic circuits. Here, gate‐controlled rectifiers optoelectronic devices based on stacked black phosphorus (BP) tungsten diselenide (WSe 2 ) heterojunctions reported. The gate‐tunable ambipolar charge carriers BP WSe enable a flexible, dynamic, wide modulation the as isotype (p–p n–n) anisotype (p–n) diodes, which exhibit disparate rectifying photovoltaic...
Logic-in-memory architecture holds great promise to meet the high-performance and energy-efficient requirements of data-intensive scenarios. Two-dimensional compacted transistors embedded with logic functions are expected extend Moore's law toward advanced nodes. Here we demonstrate that a WSe2/h-BN/graphene based middle-floating-gate field-effect transistor can perform under diverse current levels due controllable polarity by control gate, floating drain voltages. Such electrical tunable...
Silver (Ag) nanowires with a pentagonal cross section have been synthesized by polyvinylpyrrolidone (PVP)-assisted polyol reduction in the presence of Pt nanoparticle seeds. The UV–visible absorption spectra and scanning electron microscopy used to trace growth process Ag nanowires. X-ray photoelectron spectroscopy investigation further shows that PVP molecules are adsorbed on surface through : O coordination. Comparing nanoparticles, possible mechanism has proposed. It is implied as both...
Foldamers are synthetic and designable oligomers that adopt a conformationally ordered state in selected solvents. We found oligo(m-phenylene ethynylene)s, which single-stranded foldamers, can be made to reversibly disperse release single-walled carbon nanotubes (SWCNTs) simply by changing the solvent, consistent with change from an unfolded folded state. Using absorption spectroscopy, atomic force microscopy, Raman electrical measurements, we observed foldamer-dispersed SWCNTs individually...
Reported here is an extension of the nanotube longitudinal unzipping process to convert electrode-bound multiwalled carbon (MWCNT) devices into graphene nanoribbon devices. Microscopy and Raman spectroscopy were used monitor conversion process. The electrical properties characterized. efficacy protocol on device-bound MWCNTs demonstrated.
Flexible fiber-shaped supercapacitors hold promising potential in the area of portable and wearable electronics. Unfortunately, their general application is hindered by restricted energy densities due to low operating voltage small specific surface area. Herein, an all-solid-state asymmetric supercapacitor (FASC) possessing ultrahigh density reported, which positive electrode was designed as Na-doped MnO2 nanosheets on carbon nanotube fibers (CNTFs) negative MoS2 nanosheet-coated CNTFs....
X-ray detection plays an important role in medical imaging, scientific research, and security inspection. Recently, the β-Ga2O3 single-crystal-based detector has attracted extensive attention due to its excellent intrinsic properties such as good absorption for photons, a high breakdown electric field, stability, low cost. However, developing high-performance β-Ga2O3-based remains challenge because of large dark current oxygen vacancy concentration crystals. In this paper, we report Mg-doped...
We report a halide perovskite based flexible threshold-switched memristor with ultra-high speed as an artificial neuron that exhibits excellent leaky integrate-and-fire dynamics and strength-modulated spike frequency response performance.
In2O3 nanotransistors for gas sensor applications were fabricated using individual nanowires prepared by chemical vapor deposition. The nanosensors demonstrate characteristics of high sensitivity to H2S, and fast response recovery, with the detection limit at 1 ppm room temperature. might be attributed strong electron accepting capability H2S surface-to-volume ratio nanowires. In addition, show a good selective under exposure NH3 CO even 1000 ppm; they are highly promising practical in low...
Abstract Voltage‐controlled resistive switching in various gap systems on SiO 2 substrates is reported. The nanoscale‐sized gaps are made by several means using different materials including metals, semiconductors, and amorphous carbon. site further reduced size multiwalled carbon nanotubes single‐walled nanotubes. all the shares same characteristics. This independence of material compositions electrodes, accompanied observable damage to substrate at region, bespeaks intrinsic from...
ZnO nanoneedle arrays have been grown on a large scale with chemical vapor deposition method at 680 degrees C. Zn powder and O(2) gas are employed as source materials, catalyst-free Si plates used substrates. Energy-dispersive X-ray diffraction analyses show that the nanoneedles almost pure preferentially aligned in c-axis direction of wurtzite structure. The growth mechanism is discussed thermodynamic theory concluded to be result co-effect surface tension diffusion. Photoluminescence...