A5074813442- Advanced Thermoelectric Materials and Devices
- Thermal Radiation and Cooling Technologies
- Chalcogenide Semiconductor Thin Films
- Thermal properties of materials
- Advanced Sensor and Energy Harvesting Materials
- Conducting polymers and applications
- Transition Metal Oxide Nanomaterials
- Perovskite Materials and Applications
- Perfectionism, Procrastination, Anxiety Studies
- Phase-change materials and chalcogenides
- Superconductivity in MgB2 and Alloys
- Supercapacitor Materials and Fabrication
- Physics of Superconductivity and Magnetism
- Quantum Dots Synthesis And Properties
- Advanced Thermodynamics and Statistical Mechanics
- Thermal Expansion and Ionic Conductivity
- Heusler alloys: electronic and magnetic properties
Queensland University of Technology
2022-2025
By effectively converting waste heat into electricity, thermoelectric materials and devices can provide an alternative approach to tackle the energy crisis. Amongst materials, bismuth telluride (Bi2Te3) its derivatives exhibit high figure of merit ZT values in near-room-temperature region show great potential for application devices. Considering rapid development Bi2Te3-based their last few years, a short systematic review is much needed. Here, we summarize novel designs, properties,...
Abstract Solid‐state bismuth telluride‐based thermoelectric devices enable the generation of electricity from temperature differences and have been commercially applied in various fields. However, many scenarios, surface heat source is not flat. Therefore, it crucial to develop flexible materials efficiently utilize sources expand their applications. Compared with organic devices, inorganic much higher performance stability. Considering rapid development this research field, we carefully...
To solve the long-lasting challenge of low thermoelectric performance flexible device (F-TEG), in this work, we report a three-dimensional vertically structured F-TEG composed flexible, stable, and high-performing p- n-type single-walled carbon nanotube (SWCNT)-based composite films. The p-type SWCNT-based film exhibits high room-temperature power factor >500 μW m−1 K−2, benefiting from effective de-doping hybridized poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonate) (PEDOT:PSS) using...
Single-walled carbon nanotubes (SWCNTs)-based thermoelectric materials, valued for their flexibility, lightweight, and cost-effectiveness, show promise wearable devices. However, performance requires significant enhancement practical applications. To achieve this goal, in work, we introduce rational "triple treatments" to improve the overall of flexible SWCNT-based films, achieving a high power factor 20.29 µW cm
Abstract P-type Fe 3 CoSb 12 -based skutterudite thin films are successfully fabricated, exhibiting high thermoelectric performance, stability, and flexibility at medium-to-high temperatures, based on preparing custom target materials employing advanced pulsed laser deposition techniques to address the bonding challenge between high-temperature flexible polyimide substrates. Through optimization of fabrication processing nominal doping concentration Ce, show a power factor >100 μW m −1 K...
Abstract Ionic thermoelectric materials have attracted increasing attention because of their high flexibility and Seebeck coefficient. However, insufficient performance long‐standing processing limit practical applications. To achieve exotic ionic materials, here, a graphene oxide (GO) modified acrylamide ionogel is designed with flexibility. Detailed structural characterizations confirm that the uniform dispersion GO particles in structure enables power factor 753.0 µW m −1 K −2 promising...
Due to the direct conversion between thermal and electrical energy, thermoelectric materials their devices exhibit great potential for power generation refrigeration. With rapid development of personal wearable electronics, design flexible inorganic receives increasing attention. As one most mature thin‐film fabrication techniques, magnetron sputtering plays a key role in thin films devices, but its progress is still not timely comprehensively reviewed. Herein, recent advances...
Bismuth telluride (Bi2Te3) is one of the most promising thermoelectric materials for commercial application at room temperature, but performance these still needs to be improved. In this study, we report a type solvothermally Ag-doped Bi2Te3 microplate. By sintering microplates into polycrystalline bulk materials, high room-temperature figure merit 1 has been achieved. Based on comprehensive micro/nanostructural characterizations, found that doped Ag in plays two main roles, namely as...
Abstract Rhombohedral GeSe has attracted extensive attention due to its facile fabrication, low toxicity, and greater affordability compared with popular GeTe‐based thermoelectrics. However, thermoelectric properties require further optimization for practical applications. Here, a peak figure‐of‐merit of 1.31 at 623 K is reported p‐type polycrystalline (GeSe) 0.9 (AgBiTe 2 ) 0.1 ‐1.5 mol.% SnSe, ranking among the highest values. AgBiTe alloying induces phase transition in from orthorhombic...
Here, we design exotic interfaces within a flexible thermoelectric device, incorporating polyimide substrate, Ti contact layer, Cu electrode, barrier and thin film. The device features 162 pairs of thin-film legs with high room-temperature performance, using p-Bi0.5Sb1.5Te3 n-Bi2Te2.7Se0.3, figure-of-merit values 1.39 1.44, respectively. 10 nm layer creates strong bond between the substrate while significantly reduces internal resistance enhances tightness films electrodes. This enables both...
As advancements in Mg-based thermoelectric materials continue, increasing attention is directed toward enhancing the performance of Mg3Sb2 and its integration into devices. However, research on thin films their application flexible devices remains limited, leaving ample room for improvements fabrication techniques properties. To address these gaps, this study employs magnetron sputtering combined with ex-situ annealing to dope Bi films, partially substituting Sb. This approach enhances...
Heavy rare-earth element doping can effectively strengthen phonon scattering, suppress the lattice thermal conductivity, and enhance overall thermoelectric performance of GeTe. However, large electronegativity difference between elements (such as La, Eu, Gd) Ge refrains limit below 1 mol.% in Here, compared with other rare earth elements, Lu was found to have a relatively small radius Ge, which induce high level The result shows that reduces conductivity from 0.77 W m−1 K−1 GeTe 0.35...
Abstract Rhombohedral GeSe is a promising p‐type thermoelectric material, noted for its low toxicity, environmental friendliness, and greater affordability compared with tellurides. However, performance still requires further enhancement practical applications. In this work, highly competitive peak figure of merit ( ZT ) 1.24 at 623 K polycrystalline Ge 0.895 Cu 0.005 Se 0.9 (AgBiTe 2 0.1 , along high average 0.74 between 323 reported. Comprehensive micro/nanostructural characterization...
Abstract Incorporating multiple atoms with different masses and radii at distinct atomic sites within a lattice matrix can increase its entropy and, in turn, enable synergistic approach to both band structure microstructure engineering. Modifying the enhances electrical transport properties, while changes effectively suppress thermal leading significantly improved thermoelectric performance. Here, engineering is employed enhance performance of SnTe material system. The alloying Ge, Mn, In...
Abstract With the advances in bulk Mg 3 Bi 2 , there is increasing interest pursuing whether can be fabricated into flexible thin films for wearable electronics to expand practical applications. However, development of fabrication processes and effective enhancement their thermoelectric performance remain underexplored. Here, magnetron sputtering ex‐situ annealing techniques used fabricate with a power factor up 1.59 µW cm −1 K −2 at 60 °C, ranking as top value among all reported n‐type...
The debate over the optimal orientation of Ag2Se thin films and its influence on thermoelectric performance remains ongoing. Here, we report a wet-chemical selenization-based anisotropy optimization technique to control in-plane film, steering it away from (002) nearly parallel planes that hinder charge carrier mobility. This approach enables us achieve an impressive power factor 30.8 μW cm−1 K−2 at 343 K. as-fabricated film demonstrates remarkable durability, retaining 90% after six months...
AgCu(Te, Se, S) alloys, as one of the rare p-type plastic inorganic thermoelectrics, are receiving striking attention for their application foreground in high-performing flexible thermoelectric generators. However, strategies to enhance performance while maintaining exceptional plasticity remain largely unexplored. Here, we introduce a strategic vacancy-engineering approach address this challenge. Using computational design guide, carefully tune cation vacancy concentration optimize hole...
Abstract Enhancing the thermoelectric performance of Ag 2 Se thin films via physical vapor deposition remains challenging. In this study, a precursor doping strategy is introduced to fabricate In‐doped films. substitutional at cation sites increases charge density distribution Se, improving electrical conductivity, while maintaining high Seebeck coefficient and relatively low thermal conductivity. This approach yields competitive room‐temperature power factor ≈26.3 µW cm −1 K −2 ZT value...
Owing to superior thermoelectric properties, GeTe shows practical applications in power generation and refrigeration.