A5021044163- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Quantum and electron transport phenomena
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Magnetic properties of thin films
- ZnO doping and properties
- Magneto-Optical Properties and Applications
- Semiconductor Quantum Structures and Devices
- Ga2O3 and related materials
- Perovskite Materials and Applications
- Electronic and Structural Properties of Oxides
- Advancements in Semiconductor Devices and Circuit Design
- Metal and Thin Film Mechanics
- Graphene research and applications
- Silicon Nanostructures and Photoluminescence
Linköping University
2021-2025
Eötvös Loránd University
2025
We demonstrate detection and measurement of electron paramagnetic spin resonances (EPR) iron defects in <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"><a:mrow><a:mi>β</a:mi><a:mtext>−</a:mtext><a:msub><a:mi>Ga</a:mi><a:mn>2</a:mn></a:msub><a:msub><a:mi mathvariant="normal">O</a:mi><a:mn>3</a:mn></a:msub></a:mrow></a:math> utilizing generalized ellipsometry at frequencies between 110 170 GHz. The experiments are performed on an Fe-doped single crystal a free-beam configuration...
Kohn–Sham density functional theory is widely used for screening color centers in semiconductors. While the Perdew–Burke–Ernzerhof (PBE) generalized gradient approximation efficient, its accuracy describing defects often not sufficient. The Heyd–Scuseria–Ernzerhof (HSE) more accurate but computationally expensive, making it impractical large-scale screening. This study evaluates strongly constrained and appropriately normed (SCAN) family of meta-GGA functionals as potential alternatives to...
Abstract Divacancy spins implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about physics of these important defects, for instance, spin relaxation has not been thoroughly studied yet. Here, we carry out a theoretical study on environmental spin-induced processes divacancy 4H polytype silicon carbide (4H-SiC). We reveal all relevant magnetic field values where longitudinal time T 1...
The diamond nitrogen vacancy (NV) center remains an ever-increasing topic of interest. At present, it is considered ideal example a solid-state qubit applicable in quantum communication, computing, and sensing alike. With its success, the search for defects that share or improve upon advantageous features ongoing endeavor. By performing large-scale high-throughput screening 52 600 $4H$ silicon carbide (SiC), we identify collection NV-like color centers particular From this list, single most...
In two-dimensional hole systems, the Rashba spin-orbit interaction leads to a spin-dependent momentum. A perpendicular magnetic field spatially separates holes with different spins, creating mass spectrometer for spin. Spin-resolved focussing has been used measure spin polarization from amplitude of peaks. this work, The authors show that ${k}^{3}$ form term semiconductor changes scattering rate, which an exponential effect on peak amplitude. This result further demonstrates impact in physics.
Abstract Point defect qubits in semiconductors have demonstrated their outstanding capabilities for high spatial resolution sensing generating broad multidisciplinary interest. Hexagonal boron nitride (hBN) hosting point recently opened up new horizons quantum by implementing foils. The sensitivity of sensors hBN is currently limited the linewidth magnetic resonance signal, which broadened due to strong hyperfine couplings. Here, we report on a vacancy-related spin qubit with an inherently...
Paramagnetic defects and nuclear spins are the major sources of magnetic-field-dependent spin relaxation in point-defect quantum bits. The detection related optical signals has led to development advanced relaxometry applications with high spatial resolution. nearly degenerate quartet ground state silicon-vacancy qubit silicon carbide ($\mathrm{SiC}$) is special interest this respect, as it gives rise relaxation-rate extrema at vanishing magnetic field values emits first near-infrared...
Defects in semiconductors have recent years been revealed to interesting properties the venture towards quantum technologies. In this regard, silicon carbide has shown great promise as a host for defects. particular, ultra-bright AB photoluminescence lines 4H-SiC are observable at room temperature and proposed single-photon emitter. These previously studied assigned carbon antisite-vacancy pair (CAV). paper, we report on new measurements of AB-lines' dependence, carry out an in-depth...
Defects in semiconductors have recent years been revealed to interesting properties the venture towards quantum technologies. In this regard, silicon carbide has shown great promise as a host for defects. particular, ultrabright AB photoluminescence lines <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><a:mn>4</a:mn><a:mi>H</a:mi><a:mtext>−</a:mtext><a:mi>Si</a:mi><a:mi mathvariant="normal">C</a:mi></a:math> are observable at room temperature and...
The diamond nitrogen vacancy (NV) center remains an ever increasing topic of interest. At present, it is considered ideal example a solid-state qubit applicable in quantum communication, computing, and sensing alike. With its success, the search for defects that share or improve upon advantageous features ongoing endeavor. By performing large-scale high-throughput screening 52600 4H silicon carbide (SiC), we identify collection NV-like color-centers particular From this list, single most...
Paramagnetic defects and nuclear spins are the major sources of magnetic field-dependent spin relaxation in point defect quantum bits. The detection related optical signals has led to development advanced relaxometry applications with high spatial resolution. nearly degenerate quartet ground state silicon vacancy qubit carbide (SiC) is special interest this respect, as it gives rise rate extrema at vanishing field values emits first near-infra-red transmission window biological tissues,...
Paramagnetic defects and nuclear spins are often the major sources of decoherence spin relaxation in solid-state qubits realized by optically addressable point defect semiconductors. It is commonly accepted that a high degree depletion can enhance coherence time reducing magnetic noise. Here we show isotope purification beyond certain optimal level becomes contra-productive, when both electron present vicinity qubits. Using state-of-the-art numerical tools considering silicon vacancy qubit...