Nupur Saxena

ORCID: 0000-0003-2802-6248
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About
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Research Areas
  • Quantum Dots Synthesis And Properties
  • Chalcogenide Semiconductor Thin Films
  • Ion-surface interactions and analysis
  • Gas Sensing Nanomaterials and Sensors
  • Advanced Semiconductor Detectors and Materials
  • Silicon Nanostructures and Photoluminescence
  • Analytical Chemistry and Sensors
  • Semiconductor materials and interfaces
  • ZnO doping and properties
  • Nanowire Synthesis and Applications
  • Diamond and Carbon-based Materials Research
  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • Advanced Chemical Sensor Technologies
  • Copper-based nanomaterials and applications
  • Structural Engineering and Vibration Analysis
  • Advancements in Battery Materials
  • Spectroscopy and Laser Applications
  • Structural Response to Dynamic Loads
  • Metallurgical and Alloy Processes
  • Hybrid Renewable Energy Systems
  • Advanced Materials and Semiconductor Technologies
  • Ga2O3 and related materials
  • Seismic Performance and Analysis
  • Dielectric properties of ceramics

Indian Institute of Technology Kanpur
2024

Indian Institute of Technology Jammu
2023-2024

Central University of Jammu
2018-2021

University of Jammu
2018-2020

National Institute of Technology Agartala
2019

University of Delhi
2015-2017

Inter-University Accelerator Centre
2012-2014

M.J.P. Rohilkhand University
2010-2012

CdS-based 3D nano/micro-architectures, their formation mechanism and tailoring of properties for visible light induced photocatalytic activities in energy environmental applications are presented.

10.1039/d3ta00396e article EN Journal of Materials Chemistry A 2023-01-01

Nanotwin structures are observed in high-resolution transmission electron microscopy studies of cubic phase CdS quantum dots powder form by chemical co-precipitation method. The deposition thin films nanocrystalline is carried out on silicon, glass, and TEM grids keeping the substrates at room temperature (RT) 200°C pulsed laser ablation. These then subjected to thermal annealing different temperatures. Glancing angle X-ray diffraction results confirm structural transitions after deposited...

10.1186/1556-276x-7-584 article EN cc-by Nanoscale Research Letters 2012-10-23

10.1016/j.physb.2012.04.029 article EN Physica B Condensed Matter 2012-05-04

A highly sensitive UV-detector is devised for the first time from ion beam irradiated nanocrystalline CdS thin films. The sensor exhibits improvements in responsivity, photosensitivity, and efficiency as a function of fluence.

10.1039/c5ra21026g article EN RSC Advances 2015-11-16

A wide range (20–560 K) temperature sensor exhibiting linear behavior in entire is devised from CdS:SiO<sub>2</sub> nanocomposite with average sensitivity and resolution ≈10<sup>−2</sup> K<sup>−1</sup> &amp; 10<sup>−4</sup> K respectively maximum relative ~8.4% at 120 K.​

10.1039/c5ra13740c article EN RSC Advances 2015-01-01

An efficient room-temperature sensor for liquified petroleum gas (LPG) is demonstrated by employing CdS:SiO2 nanocomposite thin films (CdS:SiO2 NCTFs) the first time. NCTFs exhibiting morphology of CdS nanodroplets on micron-sized spherical balls SiO2 were deposited using pulsed laser deposition (PLD) method, followed thermal annealing. The targets chemically synthesized nanoparticles and commercially procured used to deposit swapping them at a frequency ratio 2 : 8 pulses per second, which...

10.1039/c9na00053d article EN cc-by-nc Nanoscale Advances 2019-01-01

The influence of swift heavy ion irradiation (SHII) on surface phonon mode (SPM) and green emission in nanocrystalline CdS thin films grown by chemical bath deposition is studied. SHII carried out using 70 MeV Ni ions. micro Raman analysis shows that asymmetry broadening fundamental longitudinal optical (LO) increases systematically with increasing fluence. To analyze the role confinement, spatial correlation model (SCM) fitted to experimental data. observed deviation SCM data further...

10.1063/1.4891452 article EN Journal of Applied Physics 2014-07-28

Abstract Lattice deformation is observed in nanocrystalline silicon synthesized by ion beam induced phase separation of SiO x films. The and dioxide phases achieved the suboxide films after irradiation with a 100‐MeV Ag beam. interaction high‐energy heavy material dominated an electronic energy loss process. A large amount deposited uniformly through this Glancing angle X‐ray diffraction (GAXRD), micro‐Raman spectroscopy, high‐resolution transmission electron microscopy (HRTEM),...

10.1002/pssa.201127467 article EN physica status solidi (a) 2011-11-15

Synthesis and characterization of nano-crystalline silicon grown by atom beam sputtering technique are reported. Rapid thermal annealing the deposited films is carried out in Ar + 5% H2 atmosphere for 5 min at different temperatures precipitation nano-crystals. The samples characterized their optical structural properties using various techniques. Structural studies micro-Raman spectroscopy, Fourier transform infrared transmission electron microscopy (TEM), high resolution microscopy,...

10.1186/1556-276x-7-547 article EN cc-by Nanoscale Research Letters 2012-10-03

This work shows the influence of Ag concentration on structural properties pulsed laser deposited nanocrystalline CdS thin film. X-ray photoelectron spectroscopy (XPS) studies confirm dopant in films and atomic elements. XPS show that samples are slightly sulfur deficient. GAXRD scan reveals phase transformation from cubic to hexagonal without appearance any CdO, Ag2O or Ag2S suggesting substitutional doping ions. Photoluminescence illustrate emission intensity increases with increase upto...

10.1063/1.4915408 article EN AIP conference proceedings 2015-01-01

Influence of growth temperature on swift heavy ion (SHI) induced structural and optical functionality in CdS thin films is explored for photonic applications. Intense green emission observed nanocrystalline grown by pulsed laser deposition (PLD) at two different substrate temperatures (Ts): room (RT) 200 ºC. The role Ts its implications the effect dense electronic excitation provoked irradiation (SHII) various properties investigated under influence 70 MeV 58 Ni +6 beam. It reveals from...

10.5185/amlett.2015.5921 article EN Advanced Materials Letters 2015-09-01

10.1016/j.nimb.2011.04.088 article EN Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 2011-04-24
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