A5084586454- 2D Materials and Applications
- ZnO doping and properties
- Ferroelectric and Negative Capacitance Devices
- Graphene research and applications
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Magnetic properties of thin films
- Flood Risk Assessment and Management
- Ga2O3 and related materials
- Electronic Packaging and Soldering Technologies
- Precipitation Measurement and Analysis
- Physics of Superconductivity and Magnetism
- Phase-change materials and chalcogenides
- Advancements in Battery Materials
- MXene and MAX Phase Materials
- Consumer Retail Behavior Studies
- Customer churn and segmentation
- Fullerene Chemistry and Applications
- Hydrology and Watershed Management Studies
- Hydrology and Drought Analysis
- Customer Service Quality and Loyalty
- Water resources management and optimization
- Graphene and Nanomaterials Applications
- Chalcogenide Semiconductor Thin Films
- Carbon Nanotubes in Composites
Asian Disaster Preparedness Center
2022-2025
University of Minnesota
2022-2023
Twin Cities Orthopedics
2022-2023
Khulna University of Engineering and Technology
2018-2022
ORCID
2021
University of Chinese Academy of Sciences
2020
Institute of Semiconductors
2020
Chinese Academy of Sciences
2020
We demonstrated a nanowire gate-all-around (GAA) negative capacitance (NC) tunnel field-effect transistor (TFET) based on the GaAs/InN heterostructure using TCAD simulation. In gate stacking, we proposed tri-layer HfO<sub>2</sub>/TiO<sub>2</sub>/HfO<sub>2</sub> as high-K dielectric and hafnium zirconium oxide (HZO) ferroelectric (FE) layer. The GAA-TFET overcomes thermionic limitation (60 mV/decade) of conventional MOSFETs’ subthreshold swing (SS) thanks to its improved electrostatic...
Continuous downscaling of CMOS technology at the nanometer scale with conventional MOSFETs leads to short channel effects (SCE), increased subthreshold slope (SS), and leakage current, degrading performance ICs. We proposed a dual-source vertical tunnel field-effect transistor (TFET) steeper swing (SS) superior electrostatic control thanks quantum mechanical band-to-band tunneling. show that use GaSb/InGaAsSb/InAs heterostructure boosts tunneling rate in TFETs, resulting higher on-state...
Gate-all-around (GAA) field effect transistors (FETs) have appeared as one of the potential candidates for electrostatic integrity required to reduce MOSFETs minimum channel lengths. Meanwhile, negative capacitance ferroelectrics is known a remarkable quality enhancer in terms reducing sub-threshold slope (SS), supply voltage, and power consumption by utilizing gate voltage amplification phenomenon. In this work, combining these two phenomena we numerically design cylindrical GAA NCFET where...
We report the effects of Curie temperature ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$T_{c}$ </tex-math></inline-formula> ) distribution notation="LaTeX">$\sigma _{T_{c}}$ and anisotropy field notation="LaTeX">$H_{k}$ _{H_{k}}$ on user density (UD) heat-assisted magnetic recording (HAMR) under two distinct thermal gradients (10 26 °K/nm) using micromagnetic simulation. also estimate transition...
The orientations of crystal growth significantly affect the operating characteristics elastic and inelastic deformation in semiconductor nanowires (NWs).
The effect of channel length and width on the large small-signal parameters graphene field transistor have been explored using an analytical approach. In case faster saturation as well extremely high transit frequency, shows outstanding performance. From transfer curve, it is observed that there a positive shift Dirac point from voltage 0.15 V to 0.35 because reducing 440 nm 20 this curve depicts ambipolar behavior. Besides, found widening drain current increases maximum approximately 2.4 mA...
In graphene honeycomb structure, the phonon particles are strongly coupled with electrons, therefore any change in structure of changes electron-phonon (e-ph) interaction and consequently it has an impressive effect on electronic vibrational properties graphene. Here this paper, we report vacancy defected single layer using first principle calculations based density functional theory. been found that defect introduces a band gap structure. graphene, ZA modes shifted downward lower frequency...
In recent times, two dimensional (2D) ZnO has attracted a great attention in the field of nano-research due to its extraordinary electronic, thermal and optical properties. this paper, we have explored effects halogen impurity doping such as F, Cl, Br atoms on electronic properties 2D using first principles calculation. The pristine exhibits semiconducting behavior with direct bandgap 1.67 eV Γ point. However, when impurities or are introduced, shows semi-metallic almost zero bandgap. It is...
Predictions for signal-to-noise ratio (SNR) and user density (UD) are presented a large variety of shingled heat-assisted magnetic recording (HAMR) systems. Calculations performed using micromagnetic simulation that treats the heated media cells renormalized spin blocks. Varied parameters include grain pitch (GP), heat spot full width half maximum (FWHM), reader (RW), shield-to-shield spacing (SSS). Results optimized with respect to bit length GP. Unlike previous work, base condition...
Graphene is a great semiconductor material with enormous impressive properties including unique carrier mobility and thermal conductivity. Silicon doped to graphene for opening band gap, very well known procedure. These silicon semiconductors are named as siligraphene. proposed siligraphene have different structural forms such gSiC2, g-SiC7 etc. possess stable structures while thermodynamically unstable. Recently, researchers performed some researches on of in order use them practical...
In recent times, two dimensional (2D) ZnO has attracted a great attention in the field of nano-research due to its extraordinary electronic, thermal and optical properties. this paper, we have explored effects halogen impurity doping such as F, Cl, Br atoms on electronic properties 2D using first principles calculation. The pristine exhibits semiconducting behavior with direct bandgap 1.67 eV {\Gamma} point. However, when impurities or are introduced, shows semi-metallic almost zero bandgap....