Abstract Light management is essential for metal‐halide perovskite solar cells to achieve record performance. In this review, criteria on materials, processes, and photonic engineering are established enhance primarily the short circuit current density high energy yields. These used analyze a large panel of solutions envisaged in literature single junction cells. addition, perspective acquired from rigorous electromagnetic simulations performed various comparable structures introduced...

We study the boron-oxygen defect in Si co-doped with gallium and boron hole density 10 times higher than concentration. Instead of linear dependence on observed phosphorus compensated silicon, we find a proportionality to This indicates participation substitutional, rather interstitial, complex. The measured formation rate constant is proportional squared, which gives credit latent models against reactions limited by diffusion trapping oxygen dimers atoms.

Abstract In this study, the potential of hafnium‐titanium oxide (Hf x Ti 1‐x O y , HTO) thin films is explored and deposited by low‐temperature (75 °C) atomic layer deposition (ALD) as selective contacts for crystalline silicon (c‐Si) solar cells. Through a comprehensive analysis their selectivity, optical chemical properties, band alignment characteristics, HTO are shown to exhibit remarkable electron selectivity. They formed efficient ohmic on n‐type silicon, while exhibiting diode‐like...

Thermal Atomic Layer Deposition was used to deposit Al2O3 layers with thickness ranging from 2 100 nm for surface passivation of silicon solar cells. Various characterization techniques were evaluate the chemical, physical and optical properties interfaces. Minority carrier lifetime around ms measured an optimal 15 as-deposited on high resistivity n-type substrate. An annealing step at 400 °Cincreases up 5.7ms same structure.

Abstract In this paper, we investigate gallium co‐doping during CZ crystallization of boron and phosphorus compensated Si. It is shown that the addition yields a fully p‐type ingot with high resistivity despite B P contents in silicon. Segregation doping impurities consistent theory. Minority carrier lifetime majority mobility measurements indicate material suitable for realization solar cells comparable efficiencies to standard material. Significant light‐induced degradation minority...

A number of ingots were grown from solar grade poly Silicon, to which Boron, Phosphorous and Gallium added as dopants. The introduction a third dopant allowed for better control the resistivity doping type during ingot growth. Measured in this material is shown be systematically higher than that calculated using Scheil's law dopants distribution Klaassen's model majority carrier mobility. This underestimation be, at least partially, due reduction mobility highly compensated Si compared...

This paper investigates the importance of incomplete ionization dopants in compensated p-type Si and its impact on majority-carrier density mobility thus resistivity. Both theoretical calculations temperature-dependent Hall-effect measurements demonstrate that carrier is more strongly affected by than uncompensated with same net doping. The previously suggested existence a compensation-specific scattering mechanism to explain reduction shown not be consistent T-dependence measured mobility....

A new concept of ultra-thin film photovoltaic solar cell including a planar photonic crystal is proposed. The goal to couple the incident light into broad resonances guided in absorbing layer. To achieve this, periodic lattice patterned within active layer, for example made holes amorphous silicon. By adjusting pattern dimensions, spectral position and quality factor these can be controlled so as optimise global absorption. Design details will discussed this communication.

Abstract An optimization of SiO x N y anti‐reflective coatings with graded index layers for silicon solar cells based on the Bruggeman's effective medium approximation is presented. For simulation reflectance and absorption layer, experimental optical data nitride SiN :H oxynitride obtained by Low Frequency (440 kHz) Plasma Enhanced Chemical Vapour Deposition (LF‐PECVD) were used. We have shown that antireflection coating can reduce to about 2.5% but high due extinction coefficient...

In this paper, we show through both calculations and Hall effect measurements that incomplete ionization of dopants has a greater influence on the majority-carrier density in p -type n-type compensated Si than uncompensated with same net doping. The factors influencing at room temperature are shown to be majority-dopant concentration, its energy type, compensation level. We majority- minority-carrier mobilities lower expected by Klaassen's model discrepancy increases level temperature. study...

Laser-assisted diffusion of dopants is a promising way to produce selective doping structures such as emitters or localised BSF with reduced number technological steps. This paper discusses laser-induced boron from two types borosilicate glasses (BSG) produced either by low-pressure using BCl3 gas source deposited PECVD trimethylborate (TMB) liquid source. Laser parameters were optimised for efficient heat-assisted atoms damage the silicon substrate. Sheet resistance variation about 60...

We observe minority carrier lifetime degradation in n-type wafers with boron-diffused surface and SiO2/SiN passivation when exposed to illumination or thermal aging. This is not observed on control phosphorus-diffused surfaces identical under the same treatment. Boron-diffused Si-rich SiN Al2O3 do degrade either. Both layer are thus necessary this degradation. Experiments different aging conditions indicate that due a effect accelerated by injection of excess carriers.

Abstract The industrial fabrication process of silicon heterojunction (SHJ) solar cells can induce locally depassivated regions (so‐called defectivity) because transportation steps (contact with belts, trays, etc.) or simply the environment (presence particles at wafer surfaces before thin film deposition). This surface passivation spatial heterogeneity is gaining interest as it may hinder SHJ efficiency improvements allowed by incremental step optimizations. In this paper, an experimentally...

Abstract The meso‐porous silicon layer (PS) is a promising material to reduce the surface reflectance of solar cells. PS layers were grown on front n + emitter ‐p mono‐crystalline Si junction. Single antireflection coating (ARC) achieved around 8% effective reflectivity in wavelength range between 400 1100 nm. To improve stability and passivation properties, ARC, design PECVD oxide (SiO x ) nitride (SiN :H) investigated. Optimised SiO SiN deposited decreased respectively ∼3.8% ∼7% 1000 Open...

In this paper, we investigate gallium co-doping during crystallization of boron and phosphorus compensated Si. It is shown that the addition yields a fully p-type ingot with high resistivity despite B P contents in silicon melt. Segregation doping impurities consistent theory. Minority carrier lifetime majority mobility measurements indicate material suitable for realization solar cells comparable efficiencies to standard material. Significant light-induced degradation minority however...