A5054141497- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
- Nanowire Synthesis and Applications
- ZnO doping and properties
- Physics of Superconductivity and Magnetism
- Electronic and Structural Properties of Oxides
- Ga2O3 and related materials
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Topological Materials and Phenomena
- Quantum Dots Synthesis And Properties
- Semiconductor materials and devices
University of Regensburg
2011-2016
Abstract The spin–orbit coupling (SOC) in semiconductors is strongly influenced by structural asymmetries, as prominently observed bulk crystal structures that lack inversion symmetry. Here we study an additional effect on the SOC: asymmetry induced large interface area between a nanowire core and its surrounding shell. Our experiments purely wurtzite GaAs/AlGaAs core/shell nanowires demonstrate optical spin injection into single free-standing determine effective electron g -factor of...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Stephan Furthmeier, Florian Dirnberger, Joachim Hubmann, Benedikt Bauer, Tobias Korn, Christian Schüller, Josef Zweck, Elisabeth Reiger, Dominique Bougeard; Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires. Appl. Phys. Lett. 1 December 2014; 105 (22): 222109....
We investigate spin dynamics of resident holes in a p-modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum well. Time-resolved Faraday and Kerr rotation, as well resonant amplification, are utilized our study. observe that nonresonant or high power optical pumping leads to hole polarization with opposite sign respect the optically oriented carriers, while low only if sufficient in-plane magnetic field is applied. The competition between two different processes orientation strongly...
We investigate the incorporation of manganese into self-catalyzed GaAs nanowires grown in molecular beam epitaxy. Our study reveals that Mn accumulates liquid Ga droplet and no significant nanowire is observed. Using a sequential crystallization droplet, we then demonstrate deterministic epitaxial growth MnAs segments at tip. This technique may allow seamless integration multiple room-temperature ferromagnetic with high-crystalline quality.
We develop a theoretical description of the spin dynamics resident holes in $p$-doped semiconductor quantum well (QW) subject to magnetic field slightly tilted from Voigt geometry. find expressions for signals measured time-resolved Faraday rotation (TRFR) and resonant amplification (RSA) experiments study their behavior range system parameters. that an inversion RSA peaks can occur long hole dephasing times fields. verify validity our findings by performing series TRFR on $p$-modulation...
Understanding and controlling the spin dynamics in semiconductor heterostructures is a key requirement for design of future spintronics devices. In GaAs-based heterostructures, electrons holes have very different dynamics. Some control over spin-orbit fields, which drive electron dynamics, possible by choosing crystallographic growth axis. Here, (110)-grown structures are interesting, as Dresselhaus spinorbit fields oriented along axis therefore, typically dominant Dyakonov-Perel mechanism...