Anna N. Hoffman

ORCID: 0000-0003-2899-0889
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Quantum Dots Synthesis And Properties
  • Graphene research and applications
  • Urinary Bladder and Prostate Research
  • Psychosomatic Disorders and Their Treatments
  • Circadian rhythm and melatonin
  • Chalcogenide Semiconductor Thin Films
  • Health, psychology, and well-being
  • Nanowire Synthesis and Applications
  • Stress Responses and Cortisol
  • Semiconductor materials and devices
  • Aerogels and thermal insulation
  • Catalysis and Oxidation Reactions
  • Advanced Sensor and Energy Harvesting Materials
  • Pediatric Urology and Nephrology Studies
  • Electronic and Structural Properties of Oxides
  • Urological Disorders and Treatments
  • Pelvic floor disorders treatments
  • Organic and Molecular Conductors Research
  • Advanced Computational Techniques and Applications
  • Ion-surface interactions and analysis
  • Tryptophan and brain disorders
  • Research in Social Sciences
  • Gas Sensing Nanomaterials and Sensors

Union College
2024

University of Tennessee at Knoxville
2017-2022

Sherman Oaks Hospital
2020

Park Plaza Hospital
2020

University of Iowa
2002-2006

National Institute of Mental Health
2002

Heinrich Heine University Düsseldorf
2002

Laser-induced graphene (LIG) is a multifunctional foam that commonly direct-written with an infrared laser into carbon-based precursor material. Here, visible 405 nm used to directly convert polyimide LIG. This enabled the formation of LIG spatial resolution ∼12 μm and thickness <5 μm. The by relatively smaller focused spot size represents >60% reduction in feature sizes reported prior publications. process occurs situ SEM chamber, thus allowing direct observation formation. reduced features...

10.1021/acsami.0c01377 article EN ACS Applied Materials & Interfaces 2020-02-10

Two-dimensional (2D) palladium diselenide (PdSe2 ) has strong interlayer coupling and a puckered pentagonal structure, leading to remarkable layer-dependent electronic structures highly anisotropic in-plane optical properties. However, the lack of high-quality, 2D PdSe2 crystals grown by bottom-up approaches limits study their exotic properties practical applications. In this work, chemical vapor deposition growth crystalline few-layer (≥2 layers) on various substrates is reported. The high...

10.1002/adma.201906238 article EN publisher-specific-oa Advanced Materials 2020-03-16

Abstract In this work we investigate the effects of ambient exposure on CVD grown PdSe 2 and correlate density functional theory calculations various physisorption chemisorption binding energies band structures to observed changes in electrical transport. Pristine is n-type due intrinsic selenium vacancies, but shows increased p-type conduction decreased as a function aging during which mechanisms appear be operative. Short term (&lt;160 h) ascribed an activated molecular O at vacancies;...

10.1038/s41699-019-0132-4 article EN cc-by npj 2D Materials and Applications 2019-12-13

PdSe2 has a layered structure with an unusual, puckered Cairo pentagonal tiling. Its atomic bond configuration features planar 4-fold-coordinated Pd atoms and intralayer Se-Se bonds that enable polymorphic phases distinct electronic quantum properties, especially when atomically thin. is conventionally orthorhombic, direct synthesis of its metastable still challenge. Here, we report ambient-pressure chemical vapor deposition approach to synthesize monoclinic PdSe2. Monoclinic shown be...

10.1021/acsnano.2c02711 article EN ACS Nano 2022-07-01

Controlled oxygen plasma exposure of multilayer WSe2 can modulate the carrier type field effect transistors. XPS shows with increased exposure, top layer(s) oxidizes to amorphous WO(x−3) layer-by-layer a high degree controllability as both single or 2 layers be transformed. A systematic study Raman and photoluminescence signatures clearly demonstrate processing times necessary selectively oxidized 1 exfoliated flakes. devices exposed in channel regions experience an increase p-type...

10.1088/2053-1583/ab2fa7 article EN 2D Materials 2019-07-08

Previous research suggests that patients with interstitial cystitis have poorer quality of life and higher levels depressive symptoms. However, most studies to date been limited by the lack standard measures describe experience living cystitis. In addition, our knowledge no study has used a structured interview assess symptomatology. We investigated extent symptoms impaired in sample female compared healthy controls. Relationships among physician rated symptom severity, were also examined.At...

10.1016/s0022-5347(05)65195-6 article EN The Journal of Urology 2002-04-01

A gas‐assisted focused‐helium‐ion beam‐induced etching (FIBIE) process is introduced, which accelerates direct‐write patterning of WSe 2 relative to standard ion milling. The utilizes the XeF precursor molecule provide a chemical assist for enhanced material removal sputtering. FIBIE enables high‐fidelity with doses 5× lower than He + This formation high‐resolution nanoribbons dimensions less 10 nm. demonstrate high Raman anisotropy and nanoribbon electrical measurements are reported first...

10.1002/smtd.201600060 article EN Small Methods 2017-02-24

Atmospheric and long-term aging effects on electrical properties of WSe2 transistors with various thicknesses are examined. Although countless published studies report transition-metal dichalcogenide materials, many not attentive to testing environment or age samples, which we have found significantly impacts results. Our as-fabricated exfoliated pristine devices predominantly n-type, is attributed selenium vacancies. Transfer characteristics measured in air then vacuum reveal physisorbed...

10.1021/acsami.8b12545 article EN ACS Applied Materials & Interfaces 2018-09-26

In this paper, high performance top-gated WSe2 field effect transistor (FET) devices are demonstrated via a two-step remote plasma assisted ALD process. High-quality, low-leakage aluminum oxide (Al2O3) gate dielectric layers deposited onto the channel using process with an ultrathin (∼1 nm) titanium buffer layer. The first few nanometers (∼2 of Al2O3 film is at relatively low temperature (i.e. 50 °C) and remainder 150 °C to ensure conformal coating on surface. Additionally, ultra-thin layer...

10.1088/1361-6528/aa8081 article EN Nanotechnology 2017-07-18

Controlled O2/Ar plasma exposure and subsequent low temperature inert atmosphere annealing of chemical vapor deposition (CVD) grown PdSe2 flakes etch layer-by-layer in an atomic layer etching-like (ALE) process. X-ray photoelectron spectroscopy (XPS) shows that to a remote inductively coupled (ICP) oxygen oxidizes the top form PdO2 SeO2. After situ annealing, XPS no trace or SeO2, suggesting byproducts are volatile at temperature. Atomic force microscopy exposed various O2 + Ar plasmas (O2 =...

10.1021/acsami.9b21287 article EN ACS Applied Materials & Interfaces 2020-01-17

No AccessJournal of UrologyCLINICAL UROLOGY: Original Articles1 Mar 2002DIURNAL CORTISOL VARIATIONS AND SYMPTOMS IN PATIENTS WITH INTERSTITIAL CYSTITIS SUSAN K. LUTGENDORF, KARL J. KREDER, NAN E. ROTHROCK, ANNA HOFFMAN, CLEMENS KIRSCHBAUM, ESTHER M. STERNBERG, BRIDGET ZIMMERMAN, and TIMOTHY L. RATLIFF LUTGENDORFSUSAN LUTGENDORF More articles by this author , KREDERKARL KREDER ROTHROCKNAN ROTHROCK HOFFMANANNA HOFFMAN KIRSCHBAUMCLEMENS KIRSCHBAUM STERNBERGESTHER STERNBERG ZIMMERMANM. ZIMMERMAN...

10.1016/s0022-5347(05)65295-0 article EN The Journal of Urology 2002-03-01

Abstract Tailoring the electrical transport properties of two-dimensional transition metal dichalcogenides can enable formation atomically thin circuits. In this work, cyclic hydrogen and oxygen plasma exposures are utilized to introduce defects oxidize MoS 2 in a controlled manner. This results sub-stochiometric MoO 3− x , which transforms semiconducting behavior metallic conduction. To demonstrate functionality, single flakes were lithographically oxidized using electron beam lithography...

10.1038/s41699-019-0095-5 article EN cc-by npj 2D Materials and Applications 2019-03-14

In article number 1906238, Kai Xiao and co-workers develop a novel chemical vapor deposition method to successfully synthesize pentagonal 2D material, PdSe2, which exhibits strong optical anisotropy high carrier mobility. The growth of high-quality, anisotropic crystals is essential for the rapid exploration development electronic devices with unique optoelectronic properties.

10.1002/adma.202070152 article EN Advanced Materials 2020-05-01
Coming Soon ...