A5057474741- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- ZnO doping and properties
- Copper-based nanomaterials and applications
- Silicon and Solar Cell Technologies
- Metallurgy and Material Forming
- Ga2O3 and related materials
- Gas Sensing Nanomaterials and Sensors
- Molecular Junctions and Nanostructures
- Conducting polymers and applications
- X-ray Spectroscopy and Fluorescence Analysis
- Advanced Photocatalysis Techniques
- Nuclear Materials and Properties
- Nanocomposite Films for Food Packaging
- Silicon Nanostructures and Photoluminescence
- Radiation Shielding Materials Analysis
- Quasicrystal Structures and Properties
- X-ray Diffraction in Crystallography
- Nanowire Synthesis and Applications
- Anatomy and Medical Technology
- Advanced Thermoelectric Materials and Devices
- TiO2 Photocatalysis and Solar Cells
Ankara Yıldırım Beyazıt University
2012-2023
Ankara University
2016
Turkish Aerospace Industries (Turkey)
2014
Kastamonu University
2013
Materials Science & Engineering
2013
Tokat Gaziosmanpaşa Üniversitesi
2004-2011
Atatürk University
1999-2003
High quality sandwich device was fabricated from wheat DNA molecular film by solution processing located between Au and n-type silicon inorganic semiconductor. We have performed the electrical characteristics of such as current–voltage (I–V) capacitance–voltage (C–V) at room temperature. DNA-based on this structure showed an excellent rectifying behavior with a typical ideality factor 1.22, that increased effective barrier height influencing space charge region Si. proposed could be...
The present paper reports synthesized nano-sized ZnO thin films for use as front window electrodes in PV applications, and their behavior after different sol aging times (1 h, 24 3 days 21 days) undoped 1% B amount doping. highly nanocrystalline were by the sol–gel method was used a guest material to examine its role structural, optical, electrical morphological properties this process. X-ray diffraction studies revealed that all prepared exhibited hexagonal wurtzite structure with...
We investigated Schottky barrier diodes of 9 metals (Mn, Cd, Al, Bi, Pb, Sn, Sb, Fe, and Ni) having different metal work functions to p-type Si using current-voltage characteristics. Most contacts show good characteristics with an ideality factor range from 1.057 1.831. Based on our measurements for Si, the heights a linear relationship at room temperature slope (S=ϕ b /ϕ m ) 0.162, even though Fermi level is partially pinned. From this dependency, density interface states was determined be...
Thermal annealing is widely used to improve crystal quality, which affects electrical and structural properties by reducing study defects in materials. Therefore, enormous research efforts were focused on the control of material surface nanostructure through processes, interest for various technologies. However, no work providing a detailed explanation structural, morphological optical parameters nanostructured TiO2 thin films deposited glass at temperature above 500°C sol–gel dip coating...
In this work, pyrrole–aniline copolymer/p-Si structure has been fabricated by forming a thin organic copolymer film on p-Si wafer. A good rectifying behavior was seen from the current–voltage (I–V) characteristics. The characteristic parameters of such as barrier height, ideality factor, interface states density and series resistance were determined electrical measurements using I–V, Cheung's, modified Norde's function. calculated height values different methods have shown consistency...
Schottky barrier diodes (SBDs) on p-type GaTe have been fabricated by Cd metallization and characterized current–voltage (I–V) capacitance–voltage (C–V) techniques as a function of hydrostatic pressure (0.0–7.0 kbar). The evaluation the experimental data reveals decrease height (Φb), ideality factor (n) series resistance (Rs) with an increase in pressure. zero-bias height, values for Cd/p-GaTe SBD I–V measurements range 0.743–0.682 eV, 1.246–1.219 30.5–16.4 Ω 0.0–7.0 kbar interval,...
ZnO films were successfully grown on GaN/sapphire by Pulsed Laser Deposition (PLD) and the sol–gel technique.
The development of wide-bandgap Cu(In,Ga)Se 2 thin films is crucial in order to reach the theoretical Shockley–Queisser limit values single-crystal solar cells. However, performance cells based on film absorbers has lagged significantly compared that their narrow-bandgap counterparts. Herein, we develop a feasible strategy improve photovoltaic chalcopyrite thin-film by simultaneously doping with both RbF PDT and Te 2− anions as dopants absorber layer during three-stage co-evaporation...
$\mathrm{Au}/n\ensuremath{-}\mathrm{GaAs}$ Schottky barrier diodes SBDs have been fabricated. diode parameters such as the ideality factor, series resistance, and height (SBH), ${\ensuremath{\Phi}}_{b},$ measured a function of hydrostatic pressure using current-voltage $(I\ensuremath{-}V)$ technique. We seen that SBH has linear coefficient 11.21 meV/kbar (=112.1 meV/GPa). Also, resistance value increases with increasing pressure. concluded variation due to applied should follow precisely...