We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in spectral response Mach-Zehnder interferometers (MZIs) as a function temperature were used to characterize coefficients with varying contents. A clear relation is demonstrated between content and exhibited coefficient films, highest achievable being high (1.65±0.08) ×10-4 K-1. Furthermore, we realize an SRN multi-mode...

The design, fabrication, and characterization of low loss ultra-compact bends in high index (n = 3.1 at {\lambda} 1550 nm) PECVD silicon rich nitride (SRN) is demonstrated utilized to realize efficient, small footprint thermo-optic phase shifter. Compact are structured into a folded waveguide geometry form rectangular spiral within an area 65 x \mum2 possessing total active length 1.2 mm. device features shifting efficiency 8 mW/{\pi} 3 dB switching bandwidth 15 KHz. We propose SRN as...

In this study, we demonstrate the DC Kerr effect in plasma-enhanced chemical vapor deposition silicon rich amorphous carbide (a-SiC). Using resonance shift of transmission spectra a ring resonator, experimentally extract third order nonlinear susceptibility χ3 to be 6.90×10−19 m2/V2, which is estimated more than six times higher previous reported values stoichiometric a-SiC. The corresponding induced second χ2 44.9 pm/V also three value and nitride utilizing effect. high nonlinearity makes...

We demonstrate the DC-Kerr effect in PECVD Silicon-rich Nitride (SRN) and use it to a third order nonlinear susceptibility, \c{hi}^((3)), as high (6 +/- 0.58)x10-19 m2/v2. employ spectral shift versus applied voltage measurements racetrack ring resonator tool by which characterize susceptibilities of these films. In doing so we \c{hi}^((3)) larger than that silicon argue SRN can provide versatile platform for employing optical phase-shifters while maintain low thermal budget using deposition...

The design, fabrication, and characterization of a 16-element optical phased array (OPA) using high index (n = 3.1) silicon-rich silicon nitride (SRN) is demonstrated. We present one-dimensional beam steering with end-fire facet antennas over wide range >115° at fixed wavelength 1525 nm. A width 6.3° has been measured boresight, consistent theory. demonstrate SRN as viable material choice for chip-scale OPA applications due to its thermo-optic coefficient, power handling capacity [negligible...

Convolutional neural networks have become an essential element of spatial deep learning systems. In the prevailing architecture, convolution operation is performed with Fast Fourier Transforms (FFT) electronically in GPUs. The parallelism GPUs provides efficiency over CPUs, however both approaches being electronic are bound by speed and power limits interconnect delay inside circuits. Here we present a silicon photonics based architecture for convolutional that harnesses phase property light...

We report the design of an all-optical fast Fourier transform (FFT) on a silicon-photonics on-chip platform, show phase-, amplitude-, and delay sensitivity transfer function, performance 20 Tbps.

Quantum atomic sensors based on atom interferometry (AI) have recently led to the development of new techniques for measurement inertial forces, finding important applications in both fundamental physics and applied research. As these types begun mature, they received increasing interest deployment field even space. There has been significant effort past reducing size complexity system size, weight, power (SWaP) challenging environments such as Here, we report a design assembly low-SWaP...

We demonstrate an external cavity laser with intrinsic linewidth below 100 Hz around operating wavelength of 852 nm, selected for its relevance to cooling and manipulation cesium atoms. This system achieves a maximum CW output power 24 mW, tunability over 15 side-mode suppression ratio exceeding 50 dB. performance level is facilitated by careful design low-loss integrated silicon nitride photonic circuit serving as the combined commercially available semiconductor gain chips. approach...

We demonstrate an external cavity laser with intrinsic linewidth below 100 Hz around operating wavelength of 852 nm, selected for its relevance to cooling and manipulation cesium atoms. This system achieves a maximum CW output power 24 mW, tunability over 15 side-mode suppression ratio exceeding 50 dB. performance level is facilitated by careful design low-loss integrated silicon nitride photonic circuit serving as the combined commercially available semiconductor gain chips. approach...

We demonstrate an external cavity laser with intrinsic linewidth below 100 Hz around operating wavelength of 852 nm, selected for its relevance to cooling and manipulation cesium atoms. This system achieves a maximum CW output power 24 mW, tunability over 15 side-mode suppression ratio exceeding 50 dB. performance level is facilitated by careful design low-loss integrated silicon nitride photonic circuit serving as the combined commercially available semiconductor gain chips. approach...

We demonstrate an external cavity laser with intrinsic linewidth below 100 Hz around operating wavelength of 852 nm, selected for its relevance to cooling and manipulation cesium atoms. This system achieves a maximum CW output power 24 mW, tunability over 15 side-mode suppression ratio exceeding 50 dB. performance level is facilitated by careful design low-loss integrated silicon nitride photonic circuit serving as the combined commercially available semiconductor gain chips. approach...

We demonstrate an external cavity laser with intrinsic linewidth below 100 Hz around operating wavelength of 852 nm, selected for its relevance to cooling and manipulation cesium atoms. This system achieves a maximum CW output power 24 mW, tunability over 10 side-mode suppression ratio exceeding 50 dB. performance level is facilitated by careful design low-loss integrated silicon nitride photonic circuit serving as the combined commercially available semiconductor gain chips. approach...

The fast Fourier transform, FFT, is a useful and prevalent algorithm in signal processing. It characterizes the spectral components of signal, or used combination with other operations to perform more complex computations such as filtering, convolution, correlation. Digital FFTs are limited speed by necessity moving charge within logic gates. An analog temporal FFT fiber optics has been demonstrated highest data bandwidth. However, implementation discrete optic bulky. Here, we present...

We report on development of an ultra-low loss stoichiometric silicon nitride platform for applications in wavelengths interest to cold atom systems such as interferometers and clocks. Waveguide propagation values low 1.1 dB/m at λ=852 nm were achieved through a reduction scattering absorption losses by using 40 device layer thickness LPCVD based thermal oxide cladding. Intrinsic Q_intrisnic=44 million loaded Q_loaded=19 is reported. Furthermore, we realize tunable pair...

Convolutional neural networks have become an essential element of spatial deep learning systems. In the prevailing architecture, convolution operation is performed with Fast Fourier Transforms (FFT) electronically in GPUs. The parallelism GPUs provides efficiency over CPUs, however both approaches being electronic are bound by speed and power limits interconnect delay inside circuits. Here we present a silicon photonics based architecture for convolutional that harnesses phase property light...

Convolutional neural networks have become an essential element of spatial deep learning systems. In the prevailing architecture, convolution operation is performed with Fast Fourier Transforms (FFT) electronically in GPUs. The parallelism GPUs provides efficiency over CPUs, however both approaches being electronic are bound by speed and power limits interconnect delay inside circuits. Here we present a silicon photonics based architecture for convolutional that harnesses phase property light...

We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in spectral response Mach-Zehnder Interferometers (MZIs) as a function temperature were used to characterize coefficients with varying contents. A clear relation is demonstrated between content and exhibited coefficient films, highest achievable being high (1.65+/-0.08) x 10-4 K-1. Furthermore, we realize an SRN Multi-Mode...

We characterize the thermo-optic coefficient of silicon nitride films with varying contents using plasma-enhanced chemical vapor deposition (PECVD). A clear relation between content and exhibited has been demonstrated along a as high (1.65±0.08) ×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-4</sup> K xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> .

The design, fabrication, and characterization of a 16-element optical phased array (OPA) using high index (n = 3.1) silicon rich nitride (SRN) is demonstrated. We present one-dimensional beam steering with end-fire facet antennas over wide range &gt;115° at fixed wavelength 1525 nm. A spot size 0.11° has been measured boresight, consistent theory. demonstrate SRN as viable material choice for chip-scale OPA applications due to its thermo-optic coefficient, power handling capacity negligible...

We demonstrate low loss ultra-compact bends in PECVD silicon rich nitride and utilize them towards realizing efficient thermo-optic MMI switches with P π = 23 mW a footprint of 68 x µm 2 .