A5019743118- Electronic and Structural Properties of Oxides
- Semiconductor Quantum Structures and Devices
- Physics of Superconductivity and Magnetism
- Superconducting and THz Device Technology
- Quantum and electron transport phenomena
- Advanced Electrical Measurement Techniques
- GaN-based semiconductor devices and materials
- Magnetic Field Sensors Techniques
- Photonic and Optical Devices
- Advanced Semiconductor Detectors and Materials
- Force Microscopy Techniques and Applications
- solar cell performance optimization
- Topological Materials and Phenomena
Budapest University of Technology and Economics
2022-2025
HUN-REN Centre for Energy Research
2025
Montavid Thermodynamic Research Group
2022
Hybrid systems consisting of highly transparent channels low-dimensional semiconductors between superconducting elements allow the formation quantum electronic circuits. Therefore, they are among novel material platforms that could pave way for scalable com-putation. To this aim, InAs two-dimensional electron gases ideal semiconductor due to their vanishing Schottky barrier; however, exploitation is limited by una-vailability commercial lattice-matched substrates. We show in situ growth...
Hybrid systems consisting of highly transparent channels low-dimensional semiconductors between superconducting elements allow the formation quantum electronic circuits. Therefore, they are among novel material platforms that could pave way for scalable computation. To this aim, InAs two-dimensional electron gases ideal semiconductor due to their vanishing Schottky barrier; however, exploitation is limited by unavailability commercial lattice-matched substrates. We show in situ growth...
We have studied a near-surface two-dimensional electron gas based on an InAs quantum well GaAs substrate. In devices without dielectric layer we estimated large mobilities the order of ${10}^{5}\phantom{\rule{0.28em}{0ex}}{\mathrm{cm}}^{2}/\mathrm{Vs}$. observed quantized conductance in point contact, and determined $g$ factor. Using samples with epitaxial Al layer, defined multiple Josephson junctions found critical current to be gate tunable. Based Andreev reflections...
Semiconductor-superconductor hybrid nanocircuits are of high interest due to their potential applications in quantum computing. Semiconductors with a strong spin-orbit coupling and large $g$-factor particularly attractive since they the basic building blocks novel qubit architectures. However, for engineering these complex circuits, must be characterized detail. We have investigated Josephson junction where weak link is two-dimensional electron gas (2DEG) hosted an InAs/InGaAs...
Hybrid systems consisting of highly transparent channels low-dimensional semiconductors between superconducting elements allow the formation quantum electronic circuits. They are therefore among novel material platforms which could pave way to scalable computation. To this aim, InAs two-dimensional electron gases ideal semiconductor due their vanishing Schottky barrier; however, exploitation is limited by unavailability commercial lattice-matched substrates. We show that in-situ growth...
We have studied a near-surface two-dimensional electron gas based on an InAs quantum well GaAs substrate. In devices without dielectric layer we estimated large mobilities the order of $10^5$ cm$^2$/Vs. observed quantized conductance in point contact, and determined g-factor. Using samples with epitaxial Al layer, defined multiple Josephson junctions found critical current to be gate tunable. Based Andreev reflections semiconductor-superconductor interface is transparent, induced gap 125...