A5087439683- Photodynamic Therapy Research Studies
- Porphyrin and Phthalocyanine Chemistry
- Lanthanide and Transition Metal Complexes
- Advanced MEMS and NEMS Technologies
- GaN-based semiconductor devices and materials
- Advanced Sensor and Energy Harvesting Materials
- Metal complexes synthesis and properties
- Optical Systems and Laser Technology
- Mechanical and Optical Resonators
- Sensor Technology and Measurement Systems
- Magnetism in coordination complexes
- Semiconductor Quantum Structures and Devices
- Nonlinear Optical Materials Studies
- Photocathodes and Microchannel Plates
- Nanoplatforms for cancer theranostics
Shanghai University
2021-2022
Wuhan Institute of Technology
2015-2017
This paper presents a piezoresistive differential pressure sensor based on silicon-on-insulator (SOI) structure for low detection from 0 to 30 kPa. In the design phase, stress distribution sensing membrane surface is simulated, and doping concentration geometry of piezoresistor are evaluated. By optimizing process, realization diaphragm with controllable thickness achieved, good ohmic contact ensured. To obtain higher sensitivity high temperature stability, an SOI 1.5 µm ultra-thin...
Three azobisporphyrins (Por1, Por2 and Por3) were synthesized by coupling two molecules of (4-nitrophenyl/pyridyl) porphyrins in the presence KOH/butanol. The structures confirmed UV, IR, NMR mass spectra elemental analysis. With tetraphenylporphyrin (H 2 TPP) as a control, singlet oxygen ( 1 O[Formula: see text] generation was evaluated through 1,3-diphenylisobenzofuran (DPBF) method. order ability to generate O for three Por [Formula: text]Por > 3[Formula: H TPP. photocytotoxicity...
Through a new synthetic route, three ruthenium-phenanthroline porphyrins (RPP1, RPP2 and RPP3) were prepared. Their photophysical photochemical properties, such as DNA photocleavage activity, singlet-oxygen photogeneration two-photon absorption (2PA) evaluated. These 1–3 had substantial activities, with 71%, 74% 38% observed at 20 μM. The different substituents on phenathroline group similar singlet oxygen quantum yields, Φ Δ values 0.52, 0.47 0.41, respectively. 2PA cross-section (σ (2) )...
In this work, a novel LED-HEMT integrated device structure with p-GaN cap layer under the drain electrode of HEMT and one or more InGaN layers inserted between AlGaN/GaN is proposed for monolithic integration GaN-based Micro-LED its driver HEMT. This promising candidate optoelectronic switch in high-speed visible light communications owing to elimination metal-interconnects reduction parasitic capacitance. By TCAD simulations, distribution radiative recombination rate investigated 2-D...
Along with an increasingly wide utilization in the fields of ETC application, it becomes more and important to measuring quickly accurately on key equipment system, such as OBU RSU .This article is based requirement system propose a new design proposal by selecting STR715FR0 chip base core ARM7TDMI series 5.8GHz radio frequency transceiver circuit, actual operation test results show that DSRC device Measuring Instrument works stability, reliability low power consumption, which enables...