A5008562352- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Photocatalysis Techniques
- Nanocluster Synthesis and Applications
- Advanced Nanomaterials in Catalysis
- Silicon Carbide Semiconductor Technologies
- Superconducting Materials and Applications
- Cosmology and Gravitation Theories
- Quantum, superfluid, helium dynamics
- Quantum and electron transport phenomena
- Low-power high-performance VLSI design
- Semiconductor materials and interfaces
- MXene and MAX Phase Materials
- Carbon and Quantum Dots Applications
- TiO2 Photocatalysis and Solar Cells
- Black Holes and Theoretical Physics
- Silicon and Solar Cell Technologies
Shanghai Fudan Microelectronics (China)
2023-2025
Fudan University
2023-2025
Chinese Academy of Sciences
2024
Institute of Chemistry
2024
Shanghai Innovative Research Center of Traditional Chinese Medicine
2022-2023
State Key Laboratory of ASIC and System
2023
University of Chinese Academy of Sciences
2018-2020
The synthesis of InVO4-CdS heterojunction photocatalysts has been achieved by a novel two-step approach, including microwave-assisted technique, followed moderate hydrothermal method, marking the first successful instance such synthesis. X-ray diffraction, field-emission scanning electron microscopy, elemental color mapping, high-resolution transmission UV–vis diffuse reflectance spectroscopy, Raman analysis, photoluminescence, photoelectron and Brunauer–Emmett–Teller were employed to...
Ferroelectric domain walls (DWs) are spatial interfaces separating domains with distinct polarization orientations. Among these DWs, some can carry bound charges and display metallic-like conductivity. The feature is highly of interest for future nanoelectronics. However, the inherent instability charged (CDWs) has posed a critical challenge their experimental exploration. This Letter reports head-to-head (HH) tail-to-tail (TT) 180° CDWs within context ferroelectric hafnium oxide. We...
As the architecture of logic devices is evolving towards gate-all-around (GAA) structure, research efforts on advanced transistors are increasingly desired. In order to rapidly perform accurate compact modeling for these ultra-scaled with capability cover dimensional variations, neural networks considered. this paper, a model generation methodology based artificial network (ANN) developed GAA nanosheet FETs (NSFETs) at technology nodes. The DC and AC characteristics NSFETs various physical...
The complementary field-effect transistor (CFET) with stacked N-type FET (NFET) and P-type (PFET) is an attractive approach to shrink the footprint of multiple devices at circuit level increase density. Compared traditional device structure, unique geometry CFET brings very different parasitics. In this work, we take inverter as exemplar building block provide analytical compact models calculating parasitic capacitance, which critical enable fast accurate simulations level. validity...
Threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V_{t}}$ </tex-math></inline-formula> ) engineering is critical and challenging in the advanced logic devices. Inducing interface dipoles by incorporation of dopants into gate dielectrics an emerging scheme to modulate threshold voltage. However, impact those on gate-stack performance great concern. In this work, we present...
In this article, we evaluate various crystal orientation configurations for silicon ultrascaled nanosheet FETs (NSFETs) to explore the optimum combination of wafer surface and channel orientations. The increasingly prominent physical phenomena, including quantum confinement quasi-ballistic transport, are captured physically by advanced simulation methodology. carrier density profile transport-related parameters exhibit a strong dependence on crystallographic orientations directions. effects...
Solitons are important nonperturbative excitations in superfluids. For holographic superfluids, we numerically construct dark solitons that have the symmetry-restored phase at their core. A central point is include gravitational back-reaction of matter fields, which becomes low temperatures. We study detail properties these under variation strength via tuning constant. In particular, depletion fraction particle number density core carefully investigated. agreement with probe-limit analysis,...
This letter reports a study on statistical variability of random dipole fluctuation-induced variation (DFV) in gate-all-around (GAA) nanosheet devices that adopt the interface engineering technique for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {t}}$ </tex-math></inline-formula> modulation, new intrinsic device source has yet been reported. The impact DFV with incorporation La and Al is...
Abstract The intensively concerned hafnia-based ferroelectric (FE) material has been controversial over whether the origin of its observed ferroelectricity being structural or electrochemical. We revisit rigorous application modern theory polarization on displacive FE-HfO 2 , and make clear microscopic mechanism ionic conductance intertwined with continuous nucleation-and-growth FE switching in HfO from first principles. Independent involvement vacancies, active oxygen ions can be...
This article proposes a novel zigzag-cell design for the six-transistor static random access memory (SRAM) bitcell in complementary field-effect transistor (CFET) framework. The not only maintains aggressive area reduction but also allows shorter bitlines, directly benefiting from circuit layout changes caused by CFET architecture. specific layouts of are introduced incorporating them into two process flows with different complexity. first assumed flow contains essential steps SRAM, and...
Intertwined ionic conduction and ferroelectric (FE) switching in HfO2 lead to extensive focuses. To describe its fundamental phenomena, we present a free-energy model describing the potential of ferroelectrics with successive FE paths, extend domain domains. Associate theoretical analyses first-principles calculations suggest nesting-domain pattern opposite piezoelectric loops during nucleation-and-growth process displacive FE-HfO2. A collective oxygen ion mechanism is also proposed...