M. Vinnichenko

ORCID: 0000-0003-3037-0988
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Research Areas
  • ZnO doping and properties
  • Gas Sensing Nanomaterials and Sensors
  • Ion-surface interactions and analysis
  • Metal and Thin Film Mechanics
  • Diamond and Carbon-based Materials Research
  • Thin-Film Transistor Technologies
  • Electronic and Structural Properties of Oxides
  • Semiconductor materials and devices
  • Copper-based nanomaterials and applications
  • Optical Systems and Laser Technology
  • Surface Roughness and Optical Measurements
  • Ga2O3 and related materials
  • TiO2 Photocatalysis and Solar Cells
  • Advanced Chemical Sensor Technologies
  • Copper Interconnects and Reliability
  • Advanced Sensor and Energy Harvesting Materials
  • Laser Material Processing Techniques
  • Transition Metal Oxide Nanomaterials
  • Advanced Photocatalysis Techniques
  • Optical Coatings and Gratings
  • Electron and X-Ray Spectroscopy Techniques
  • Analytical Chemistry and Sensors
  • Integrated Circuits and Semiconductor Failure Analysis
  • Corrosion Behavior and Inhibition
  • Magneto-Optical Properties and Applications

Fraunhofer Institute for Ceramic Technologies and Systems
2013-2025

Helmholtz-Zentrum Dresden-Rossendorf
2004-2013

Fraunhofer Institute for Material and Beam Technology
2007

Taras Shevchenko National University of Kyiv
1995-2005

Kurchatov Institute
2001

Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [H. Pan et al., Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce into ion implantation. Room temperature observed. Our analysis demonstrates that (1) C-doped ferromagnetic can be achieved an alternative method, i.e., implantation, and (2) the chemical involvement of is indirectly proven.

10.1063/1.3048076 article EN Applied Physics Letters 2008-12-08

The study is focused on the improvement of free electron mobility in Al-doped ZnO films grown by reactive pulsed magnetron sputtering. At optimum growth conditions low-absorbing are obtained with a Hall 46 cm2 V−1 s−1, density 6.0×1020 cm−3, and an electrical resistivity 2.26×10−4 Ω cm. relation between for different discussed terms ionized impurity scattering, clustering, grain boundary limited transport.

10.1063/1.3074373 article EN Applied Physics Letters 2009-01-26

The current state of investigations the problem providing first mirrors (FMs) for diagnostic systems in a reactor-grade fusion device is summarized. Results obtained simulation experiments that have been conducted during recent years several laboratories are presented. Attention concentrated on two processes can an opposite effect but both lead to degradation mirror optical properties, namely: sputtering by charge exchange atoms which leads erosion, and deposition surface contamination. It...

10.1063/1.1310580 article EN Review of Scientific Instruments 2001-01-01

The atomic arrangement in $s{p}^{2}$-dominated carbon (C) and nitride $({\mathrm{CN}}_{x})$ thin films has been studied by Raman spectroscopy as a function of substrate temperature and, the case ${\mathrm{CN}}_{x}$, different N incorporation routes (growth methods). In this way, materials composing graphitelike, fullerenelike (FL), paracyanogenlike structures have compared. results show that each type characteristic set spectra parameters, which describe degree aromatic clustering, bond...

10.1103/physrevb.73.125427 article EN Physical Review B 2006-03-24

High-quality Sn-doped In 2 O 3 (ITO) films were grown epitaxially on yttria stabilized zirconia (111) with oxygen-plasma assisted molecular beam epitaxy (MBE).The 12 nm thick films, containing 2-6% Sn, are fully oxidized.Angle-resolved x-ray photoelectron spectroscopy (ARXPS) confirms that the Sn dopant substitutes atoms in bixbyite lattice.From XPS peak shape analysis and spectroscopic ellipsometry measurements it is estimated that, a film 6 at.%Sn, ∼1/3 of electrically active.Reflection...

10.1088/1367-2630/10/12/125030 article EN cc-by New Journal of Physics 2008-12-22

Abstract A stringent quality requirement for a nm‐thick multi‐stack heterostructures and delicate antiferromagnetic interlayer couplings inherent to giant magnetoresistive (GMR) sensors limits their seamless integration on objects with non‐planar surfaces and/or biological structures. Here, green transfer method of high performance mechanically robust GMR wide range biological, organic, inorganic substrates is demonstrated. Importantly, the technique relies water biocompatible polyvinyl...

10.1002/adfm.202502947 article EN cc-by Advanced Functional Materials 2025-04-10

The evolution of $s{p}^{2}$ hybrids in amorphous carbon (a-C) films deposited at different substrate temperatures was studied experimentally and theoretically. bonding structure a-C prepared by filtered cathodic vacuum arc assessed the combination visible Raman spectroscopy, x-ray absorption, spectroscopic ellipsometry, while structures were generated molecular-dynamics deposition simulations with Brenner interatomic potential to determine theoretical site distributions. experimental results...

10.1103/physrevb.72.014120 article EN Physical Review B 2005-07-20

Co-doped ZnO films with various electron concentrations up to 4.61 × 1019 cm−3 at room temperature were prepared by pulsed laser deposition on a-plane sapphire substrates. Only paramagnetism was observed down 2 K for all samples. X-ray magnetic circular dichroism measurements 30 K confirmed the paramagnetic properties of doped Co2+ ions. The average moment is significantly smaller than expected ions (L = 1.07, S 3/2), mainly due antiferromagnetic exchange interaction between neighbouring in...

10.1088/0022-3727/42/8/085001 article EN Journal of Physics D Applied Physics 2009-03-26

The formation and dynamics of nanopatterns produced on Si(100) surfaces by 40-keV Ar${}^{+}$ oblique (\ensuremath{\alpha} $=$ 60\ifmmode^\circ\else\textdegree\fi{}) bombardment with concurrent Fe codeposition have been studied. Morphological chemical analysis has performed ex situ atomic force microscopy, Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, scanning transmission electron microscopies. During irradiation, atoms incorporated into the target surface react...

10.1103/physrevb.86.085436 article EN Physical Review B 2012-08-20

The density, microstructure, and ionic conductivity of solid electrolyte Li1.3Al0.3Ti1.7(PO4)3 (LATP) ceramics prepared by cold sintering using liquid additives are studied. effects both (water water solutions acetic acid lithium hydroxide) (lithium acetate) on densification investigated. properties cold-sintered LATP compared to those conventionally sintered LATP. materials at temperatures 140-280 °C pressures 510-600 MPa show relative density in the range 90-98% LATP's theoretical value,...

10.3390/nano12183178 article EN cc-by Nanomaterials 2022-09-13

Abstract Printed magnetic field sensors enable a new generation of human‐machine interfaces and contactless switches for resource‐efficient printed interactive electronics. As magnetoresistors rely on scarce or hard to manufacture magnetosensitive powders, their scalability demonstration printing with industry‐grade technologies are the key material science challenges. Here, authors report dispenser commodity scale nonmagnetic bismuth‐based paste processed by large area laser sintering...

10.1002/admt.202200227 article EN cc-by Advanced Materials Technologies 2022-04-05

X-ray absorption near edge structure and x-ray diffraction studies with synchrotron radiation have been used to relate the electrical properties of ZnO:Al films their bonding phase composition. It is found that Al-sites in an insulating metastable homologous (ZnO)3Al2O3 are favored above a certain substrate temperature (TS) leading deterioration both crystallinity films. The higher film resistivity associated lower carrier mobility due increased free electron scattering. Lower metal oxygen...

10.1063/1.3385024 article EN Applied Physics Letters 2010-04-05

ITO layers with low resistivity and high visible transmittance were produced by means of middle frequency reactive dual magnetron sputtering. The influence base pressure, Ar/O2 ratio pulse duration on the film composition, structure, electrical, optical properties has been investigated. deposition rate is proportional to operation power at changing constant Ar O2 flows. At enhanced flows an onset target oxidation discussed as a reason for decrease rate. presence water vapor in residual gas...

10.1116/1.1647595 article EN Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2004-02-12

Abstract Titanium dioxide films were grown on unheated substrates by mid‐frequency (100 kHz) reactive pulsed magnetron sputtering at different O 2 partial pressures in an Ar/O atmosphere. X‐ray diffraction and absorption measurements reveal a transition from amorphous anatase to nanocrystalline rutile with [O ], mixture of both phases intermediate values. Atomic force microscopy shows that the promotion is accompanied surface roughening due apparition hollow structures (holes) surface,...

10.1002/ppap.200900182 article EN Plasma Processes and Polymers 2010-08-26

Low-emissivity coatings on glass, which provide highly efficient heat isolation, are nowadays extensively used in windows offices and residential buildings for the purpose of saving energy air conditioning. In this paper, multilayer low-emissivity with structure glass/SnO2/Ni–Cr/Ag/Ni–Cr/SnO2 were deposited onto large glass substrates an industrial sputtering system. The extremely low thickness layers compose such structures, as well substrate area, causes impurity content films interfaces...

10.1088/0022-3727/37/11/008 article EN Journal of Physics D Applied Physics 2004-05-13

The work is focused on understanding the physical processes responsible for modification of structure, electrical and optical properties polycrystalline TiO2:Ta films formed by annealing initially amorphous grown direct current magnetron sputtering electrically conductive ceramic targets. It shown that fine tuning oxygen content during deposition critical to achieving low resistivity high transmittance after annealing. Increasing total pressure sputter decrease sensitivity annealed flow...

10.1063/1.4819088 article EN Journal of Applied Physics 2013-08-26

Indium tin oxide films produced by reactive middle frequency magnetron sputtering were annealed in a vacuum. The electrical and optical properties of the film have been studied situ along with direct characterization crystalline structure. Even amorphous state, resistivity significantly decreases increasing temperature due to free-electron density enhancement, likely generation oxygen vacancies. A rapid crystallization within range 250–280°C leads further decrease Sn donor activation. depend...

10.1063/1.1771456 article EN Applied Physics Letters 2004-07-08
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