L. C. Damonte

ORCID: 0000-0003-3056-4686
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • ZnO doping and properties
  • Metallic Glasses and Amorphous Alloys
  • Muon and positron interactions and applications
  • Phase-change materials and chalcogenides
  • Copper-based nanomaterials and applications
  • Gas Sensing Nanomaterials and Sensors
  • Semiconductor materials and devices
  • Theoretical and Computational Physics
  • Copper Interconnects and Reliability
  • TiO2 Photocatalysis and Solar Cells
  • Magnetic Properties and Synthesis of Ferrites
  • Chalcogenide Semiconductor Thin Films
  • Quasicrystal Structures and Properties
  • Advanced Photocatalysis Techniques
  • Advanced ceramic materials synthesis
  • Nanocomposite Films for Food Packaging
  • Glass properties and applications
  • Semiconductor materials and interfaces
  • nanoparticles nucleation surface interactions
  • Advancements in Battery Materials
  • Microstructure and Mechanical Properties of Steels
  • Nanomaterials for catalytic reactions
  • Extraction and Separation Processes
  • Microstructure and mechanical properties
  • Metal and Thin Film Mechanics

Instituto de Física La Plata
2012-2024

Consejo Nacional de Investigaciones Científicas y Técnicas
2014-2024

Universidad Nacional de La Plata
2013-2023

Centro de Investigación y Desarrollo en Criotecnología de Alimentos
2019

Centro Científico Tecnológico - San Juan
2012

Universitat Politècnica de València
2005-2010

Centro Científico Tecnológico - Tucumán
2010

Universitat de València
1996

Instituto de Física Corpuscular
1996

We present a series of measurements the static and time-dependent interactions in angular correlation $^{111}\mathrm{In}$ (electron capture to $^{111}\mathrm{Cd}$) pure Sn-doped ${\mathrm{In}}_{2}$${\mathrm{O}}_{3}$. Results on electric field gradient are consistent with mainly ionic bonds confirm s character conduction band. The temperature free-electron-density dependence fluctuating interaction is analyzed, thus allowing tentative description electron-capture aftereffects semiconductors...

10.1103/physrevb.32.2393 article EN Physical review. B, Condensed matter 1985-08-15

The fabrication of nanostructured ZnO thin films is a critic process for lot applications this semiconductor material. final properties film depend fundamentally the morphology sintered layer. In paper presented layers with control by pulsed electrodeposition over ITO. Process optimization achieved and results are assessed after careful characterization both electrical properties. SEM used nucleation analysis on deposited samples. Optical like transmission spectra Indirect Band Gap to...

10.1149/1.3593004 article EN Journal of The Electrochemical Society 2011-01-01

ZnO nanostructures were obtained by electrodeposition on Ni foam, where graphene was previously grown chemical vapor deposition (CVD). The resulting heterostructures characterized X-ray diffraction and SEM microscopy, their potential application as a catalyst for the photodegradation of methylene blue (MB) evaluated. incorporation to substrate increases amount deposited at low potentials in comparison bare Ni. images show homogeneous growth Ni/G but not foam. A percent removal almost 60% MB...

10.24294/can.v7i1.5756 article EN Characterization and Application of Nanomaterials 2024-05-29

10.1016/j.radphyschem.2006.03.046 article EN Radiation Physics and Chemistry 2006-05-12

Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, three types of transparent conductive oxides grow commercial ITO (In2O3:Sn)-covered glass substrates: (1) prepared by spin coating, (2) direct current magnetron sputtering, and (3) ITO-covered substrates. Although thin, these primary oxide layers play important role the properties grown top them. Additionally, prevent hole combination when used in optoelectronic devices. Structural...

10.1186/1556-276x-8-135 article EN cc-by Nanoscale Research Letters 2013-03-23
Coming Soon ...