- Radiation Effects in Electronics
- Semiconductor materials and devices
- Advanced DC-DC Converters
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Electrostatic Discharge in Electronics
- Particle Detector Development and Performance
- Electromagnetic Compatibility and Noise Suppression
- Analog and Mixed-Signal Circuit Design
- Low-power high-performance VLSI design
- Wireless Power Transfer Systems
- Integrated Circuits and Semiconductor Failure Analysis
- CCD and CMOS Imaging Sensors
- Radiation Detection and Scintillator Technologies
- Microgrid Control and Optimization
- Multilevel Inverters and Converters
- Advanced Battery Technologies Research
- Particle physics theoretical and experimental studies
- Radio Frequency Integrated Circuit Design
- Advancements in Battery Materials
- Air Quality Monitoring and Forecasting
- Atomic and Subatomic Physics Research
- Energy Harvesting in Wireless Networks
- Electric Power Systems and Control
- Superconducting Materials and Applications
European Organization for Nuclear Research
2014-2024
University of Padua
2015
Ball (France)
2014
National Superconducting Cyclotron Laboratory
2014
Michigan State University
2014
Moscow Engineering Physics Institute
2014
École Polytechnique Fédérale de Lausanne
2008-2012
Swiss Epilepsy Center
2009-2011
The behavior of transistors in commercial-grade complementary metal-oxide semiconductor technologies the 65 and 130 nm nodes has been explored up to a total ionizing dose 1 Grad. large tolerance thin gate oxide is confirmed, but defects spacer STI oxides have strong effect on performance transistors. A radiation-induced short channel traced charge trapping spacers used for drain engineering, while narrow due defect generation lateral isolation (STI). These strongly degrade electrical...
The degradation induced by ultrahigh total ionizing dose in 65-nm MOS transistors is strongly gate-length dependent. current drive decreases during irradiation, and the threshold voltage often shifts significantly irradiation and/or high-temperature annealing, depending on transistor polarity, applied field, irradiation/annealing temperature. Ionization spacer oxide overlying silicon nitride layers above lightly doped drain extensions leads to charge buildup as well ionization release of...
TID and displacement damage effects are studied for vertical lateral power MOSFETs in five different technologies view of the development radiation-tolerant fully integrated DC-DC converters. Investigation is pushed to very high level radiation expected an upgrade LHC experiments. induces threshold voltage shifts and, n-channel transistors, source-drain leakage currents. Wide variability magnitude these observed. Displacement increases on-resistance both high-voltage transistors. In latter...
Abstract For the first time in High-Energy Physics (HEP) community, a family of fully integrated radiation-hardened DC/DC converters, including all capacitors and inductors, has been developed. This paper presents experimental results three functional ASIC prototypes implemented 28 nm CMOS technology. All utilize 0.9 V-rated transistors to ensure resilience radiation levels up 1 Grad. The include iPOL5V iPOL2V3, which are state-of-the-art resonant converters capable regulating input voltages...
The paper describes the design of optimized printed circuit board (PCB) air-core toroids for high-frequency dc–dc converters with strict requirements in terms volume and noise. effect several parameters on overall inductor volume, dc ac winding resistance, radiated noise will be investigated. PCB are compared to standard solenoids other state-of-the-art both theoretically experimentally: at first, using ANSOFT Maxwell Q3D simulation tools, subsequently, laboratory measurements (irradiated...
The radiation response of complementary metal- oxide-semiconductor (CMOS) gate oxides is typically insensitive to true dose-rate effects, but damage in deep-sub-micrometer technologies dominated by ionization mechanisms thick isolation surrounding the transistors. Recent results 65-nm FETs demonstrated that performance degradation ultrahigh total ionizing dose (TID) experiments due defects shallow trench oxide or materials composing lightly doped drain spacers. These insulators are thick,...
In view of application in upgraded particles detectors at the LHC accelerator, CERN has developed a radiation and magnetic field tolerant 10W Point-Of-Load (POL) buck DC/DC converter. The DCDC is based on FEAST2, an ASIC designed using 'Hardness-By- Design' (HBD) techniques selected commercial high voltage CMOS technology. main features circuit, together with electrical characterization as well data for TID, Displacement Damage (DD) SEEs are presented. FEAST2 meets all requirements...
We studied device-to-device variations as a function of total dose in MOSFETs, using specially designed test structures and procedures aimed at maximizing matching between transistors. Degradation nMOSFETs is less severe than pMOSFETs does not show any clear increase sample-to-sample variability due to the exposure. At doses smaller 1 Mrad( <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex...
The development at CERN of low noise DC-DC converters for the powering front-end systems enables implementation efficient schemes physics experiments HL-LHC. Recent tests made on ATLAS short strip tracker modules confirm full electromagnetic compatibility converter prototypes with detectors. integration in trackers front-ends needs to address also material budget constraints. impact onto is discussed and mass reduction techniques are explored, leading a compromise between mass. Low shield...
Based on a detailed study of the radiation tolerance high-voltage transistors, 2 commercial CMOS technologies have been selected for design synchronous buck DCDC converter ASICs. Three prototype converters produced, embedding increasingly sophisticated functions. The electrical and performance these prototypes is presented.
The paper describes the design of optimized PCB air-core toroids for high frequency DC-DC converters with strict requirements in terms volume and noise. effect several parameters on overall inductor volume, DC AC winding resistance, radiated noise will be investigated. are compared to standard solenoids other state-of-the-art both theoretically experimentally: at first using ANSOFT Maxwell Q3D simulation tools, subsequently laboratory measurements (irradiated efficiency) prototypes. These...
In recent years, there has been a significant increase in the power consumption of data centers. As result, server rack architecture shifted from using 12 V to higher voltage levels 48–60 V. The conventional delivery system use involves two stages dc–dc conversion, utilizing an unregulated first-stage converter followed by regulated converter. Among topologies, 4-to-1 switched tank (STC) is highly employed due its high efficiency and density. However, STC drawback generating large inrush...
MOS transistors in 65-nm CMOS technology exposed to ultrahigh total ionizing dose (TID) levels show clear evidence of a true dose-rate (DR) dependence. In order assess the impact this effect and understand its origin, an extensive measurement campaign has been carried out at different DRs, temperatures, biases. Both nMOS pMOS devices with sizes geometries were studied. The results obtained clearly that DR sensitivity these is due mechanisms occur spacer insulators. Spacers have only recently...
In view of the upgrade LHC experiments, we are developing custom DC/DC converters for a more efficient power distribution scheme. A new prototype have been integrated in ASICs selected 0.35μm commercial high voltage technology that has successfully tested all radiation effects: TID, displacement damage and Single Event Burnout. This converter optimized efficiency improved tolerance. Amongst features most relevant presence internal linear regulators, protection circuits with state-machine...
The upgrade of the Large Hadron Collider (LHC) experiments at CERN sets new challenges for powering detectors. One schemes under study is based on DC-DC buck converters mounted front-end modules. hard environmental conditions impose strict restrictions to in terms low volume, radiation and magnetic field tolerance. Furthermore, noise emission switching must not affect performance powered systems. A sources paths a synchronous converter has been made identifying critical parameters reduce...
Voltage regulator modules are dc-dc converters that power modern microprocessors. They must exhibit a fast dynamic response, in order to achieve satisfactory regulation performance spite of the rapid load current variations. The pulsewidth modulator is one elements determine converter transient response. This letter introduces dual-edge outperforms conventional modulation schemes terms both small- and large-signal performances: first, its small-signal transfer function exhibits phase boost...
The development of front-end systems for the ATLAS tracker at sLHC is now in progress and availability radiation tolerant buck converter ASICs enables implementation DC to based powering schemes. powered this manner will be exposed radiated conducted noise emitted by converters. electromagnetic compatibility between converters short strip hybrid prototypes has been studied with specific susceptibility tests. Different have designed following a optimization methodology match requirements...
This article presents a novel control system for regulated resonant switched-capacitor point-of-load converter, together with its steady-state and small-signal analyses. The output voltage is through combined frequency/phase shift on-chip controller that operates, thanks to zero-crossing detector the tank current. By using such technique, regulation can be achieved wide range of conversion ratios. Different operation modes are adopted maximize efficiency at every load condition. A prototype...
In high energy physics and space applications it becomes mandatory to solve specific problems concerning the power supply. both cases, exists a harsh radiation environment presence of external electromagnetic perturbations. The former prevents use standard technology many studies on this subject were already made. Solutions foresee ad-hoc technologies or modification layout technologies. latter causes magnetic elements used in switching supply topology. aim study is analysis components...
The paper illustrates the basic features and compares expected performance of different DC-DC converter topologies, that represent possible candidates for power distribution network future super large hadron collider (SLHC) experiments at CERN. specifications require converters to operate in a highly hostile environment, where high radiation fluxes call development custom designed ASICs, based on selected technology, stationary magnetic fields (> 4T) prevent use any material. topologies...
TID and displacement damage effects are studied for vertical lateral power MOSFETs in five different technologies view of the development radiation-tolerant fully integrated DC-DC converters. Investigation is pushed to very high level radiation expected an upgrade LHC experiments. induces threshold voltage shifts and, n-channel transistors, source-drain leakage currents. Wide variability magnitude these observed. Displacement increases on-resistance both high-voltage transistors. In latter...
Radiation- and magnetic field tolerant DCDC converters that step down the voltage from a 2.5 V bus are needed for High-Luminosity detectors. This work presents developed prototypes, based on ASICs designed in 130 nm CMOS technology. A buck converter (bPOL2V5) is close to production readiness, showing an 89.7% peak efficiency tolerance 200 Mrad of Total Ionizing Dose (TID) fluence 10 16 n/cm 2 . lower-volume alternative bPOL2V5 (called rPOL2V5) uses resonant switched-capacitor architecture...
A radiation-hard DC/DC converter has been developed at CERN, which tolerates a higher input voltage (up to 48 V) and provides larger output power than existing solutions. It is called bPOL48V, it employs commercial Gallium Nitride device CERN-developed control ASIC (GaN_Controller). bPOL48V can provide 10 of current efficiencies 95%, features radiation tolerance for space high energy physics (HEP) requirements, being able withstand 228 MRad TID, LET =88.8 MeV·cm <sup...