H. Yang

ORCID: 0000-0003-3135-3995
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About
Contact & Profiles
Research Areas
  • Surface and Thin Film Phenomena
  • Molecular Junctions and Nanostructures
  • Graphene research and applications
  • Force Microscopy Techniques and Applications
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • ZnO doping and properties
  • Near-Field Optical Microscopy
  • Photocathodes and Microchannel Plates
  • Integrated Circuits and Semiconductor Failure Analysis
  • Surface Chemistry and Catalysis
  • Wireless Communication Networks Research
  • Optical Coatings and Gratings
  • Advanced Wireless Communication Techniques
  • Nanofabrication and Lithography Techniques
  • Ferroelectric and Negative Capacitance Devices
  • Sensor Technology and Measurement Systems
  • Coding theory and cryptography
  • Luminescence Properties of Advanced Materials
  • Ga2O3 and related materials
  • Advancements in Battery Materials
  • Gas Sensing Nanomaterials and Sensors
  • Quantum and electron transport phenomena

State Key Laboratory on Integrated Optoelectronics
2023

Jilin University
2023

GlobalFoundries (United States)
2017-2018

Institut des Sciences Moléculaires d'Orsay
2011-2014

Université Paris-Sud
2008-2014

Centre National de la Recherche Scientifique
2008-2013

Seoul National University
2008-2013

Samsung (South Korea)
2011-2013

Guangxi University
2013

University of Science and Technology of China
2011

We describe a reliable fabrication procedure of silver tips for scanning tunneling microscope (STM) induced luminescence experiments. The tip was first etched electrochemically to yield sharp cone shape using selected electrolyte solutions and then sputter cleaned in ultrahigh vacuum remove surface oxidation. status, particular the plasmon mode its emission intensity, can be further tuned through field voltage pulse. quality thus fabricated not only offers atomically resolved STM imaging,...

10.1063/1.3617456 article EN Review of Scientific Instruments 2011-08-01

This paper highlights a 14nm Analog and RF technology based on logic FinFET platform for the first time. An optimized device layout shows excellent F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> /F xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of (314GHz/180GHz) (285GHz/140GHz) NFET PFET respectively. A higher performance compared to 28nm is due source/drain stressor mobility improvement. benefit better channel electrostatics...

10.23919/vlsit.2017.7998154 article EN Symposium on VLSI Technology 2017-06-01

We use in situ reflection high-energy electron diffraction to investigate the growth kinetics of cubic (001)-GaN/GaAs grown by plasma-assisted molecular beam epitaxy. find that GaN surface exhibits three reconstructions having (1×1), (2×2), and c(2×2) symmetries, which correspond Ga adatom coverages 0, 0.5, 1, respectively. demonstrate transient behavior half-order streak intensity is a sensitive probe stoichiometry during growth. Particularly, these measurements enable us directly determine...

10.1063/1.116474 article EN Applied Physics Letters 1996-01-08

Scanning Tunneling Microscopy (STM), Spectroscopy (STS), and manipulation studies were performed on an ordered self-assembled monolayer (SAM) of N,N'-bis(1-hexylheptyl)perylene-3,4:9,10-bis(dicarboximide) molecules epitaxial graphene hexagonal silicon carbide - SiC(0001). Four novel aspects the molecular SAM are presented. Molecules adsorb in both armchair zig-zag configurations, giving rise to six orientations layer with respect underlying substrate. The interaction between surface shifts...

10.1039/c3cp42591f article EN Physical Chemistry Chemical Physics 2013-01-01

We present a density-functional theory (DFT) study combined with scanning tunneling microscopy (STM) experiments of the chemisorption $N$,$N$\ensuremath{'}-bis(1-hexylheptyl)perylene-3,4:9,10-bis(dicarboximide) molecule, noted here as DHH-PTCDI, on SiC(0001)-3 \ifmmode\times\else\texttimes\fi{} 3 surface. Five possible adsorption configurations have been investigated in which molecular occurs two adjacent Si adatoms via different pairs atoms molecule. calculated energies, structures, density...

10.1103/physrevb.85.035423 article EN Physical Review B 2012-01-17

Controlling the intrinsic optical and electronic properties of a single molecule adsorbed on surface requires decoupling some molecular orbitals from states. Scanning tunneling microscopy experiments density functional theory calculations are used to study perylene derivative (DHH-PTCDI), clean 3 × reconstructed wide band gap silicon carbide (SiC(0001)-3 3). We find that LUMO is invisible in I(V) spectra due absence any or bulk states HOMO has very low saturation current I(z) spectra. These...

10.1039/c2cp23104b article EN Physical Chemistry Chemical Physics 2011-12-23

$Z\text{\ensuremath{-}}V$ scanning tunneling spectroscopy is used to probe the topology and electron scattering properties of electronic interfaces monolayer bilayer graphenes, expitaxially grown on SiC(0001). The $dZ/dV$ spectra validate existing calculations interface provide evidence for new due changes in character bonding. Two sharp boundaries are observed: between vacuum graphene $\ensuremath{\pi}$ state lying above atom plane a subsurface barrier carbon-rich layer bulk SiC.

10.1103/physrevb.78.041408 article EN Physical Review B 2008-07-28

Room-temperature light emission from single chemisorbed perylene based molecules adsorbed on silicon carbide (SiC) is probed by scanning tunneling microscopy (STM). A new approach to STM-induced luminescence of a molecule explored using wide-band-gap semiconductor decouple electronically the surface. After molecular adsorption, lowest unoccupied orbital and highest occupied (HOMO) both lie within bulk band gap below Fermi level substrate. The maximum photon energy shows fixed shift 1.5 eV...

10.1103/physrevb.90.125427 article EN Physical Review B 2014-09-17

A multiple workfunction (multi-WF) integration technology was developed for ultra-low voltage operation in high performance FinFETs. It is essential to solve three key issues the multi-WF process, a) short channel effect (SCE) degradation due removing halo implants b) gate resistance increase stack, and c) dielectric reliability additional patterning. In this study, we resolve these through combination of junction engineering metal (WFM) boolean long (LC) (SC) devices SCE, WFM stack...

10.1109/vlsit.2018.8510641 article EN 2018-06-01

The paper considers the performance of space-time trellis codes (STTC) in WCDMA forward links and its receiver structures. a RAKE matched filter over frequency selective multiuser multiple-input multiple-output (MIMO) channels is first investigated. Then we present an minimum mean-squared error (MMSE) detector which suppresses interference STTC systems generated from multipath, multiuser, multiple antenna propagation. bit rate MMSE analyzed for systems. To obtain further improvement, more...

10.1109/vetecf.2002.1040339 article EN 2003-06-25

Eu3+-doped YInGe2O7 phosphors were prepared via a solid-state reaction with metal oxides and their excitation emission spectra measured at room temperature. The results showed that pure-phase could be obtained after firing 1250 °C. maximum photoluminescence intensity of YInGe2O7:Eu3+ phosphor was achieved when doped 40 mol% Eu3+ ions. Compared Y2O2S:0.05Eu3+, the Y0.60InGe2O7:Eu3+0.40 intense red-emission lines 616 nm, corresponding to forced electric dipole 5D0 → 7F2 transitions under 394...

10.4314/bcse.v27i2.18 article EN cc-by Bulletin of the Chemical Society of Ethiopia 2013-05-17

In order to solve the problems existing in two-transistor forward converter (TTFC) with variable turn ratio, that is, circuit for detecting input voltage is easy be damaged, utilization rate of winding low, and dynamic response will decrease due change ratio. A indirectly voltage, an efficient method changing dual-optocoupler feedback (DOFC) are proposed. When DOFC connected <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...

10.1109/tcsii.2023.3288044 article EN IEEE Transactions on Circuits & Systems II Express Briefs 2023-06-20
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