A5061385008- Transition Metal Oxide Nanomaterials
- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Ga2O3 and related materials
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Advanced Sensor and Energy Harvesting Materials
- Conducting polymers and applications
- Advanced Memory and Neural Computing
- Analytical Chemistry and Sensors
- 2D Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- GaN-based semiconductor devices and materials
- Graphene research and applications
- Semiconductor materials and devices
- Optical Wireless Communication Technologies
- Advanced Semiconductor Detectors and Materials
- Metal and Thin Film Mechanics
- Silicon and Solar Cell Technologies
- Laser Material Processing Techniques
- Photonic and Optical Devices
- CCD and CMOS Imaging Sensors
- Terahertz technology and applications
University of Electronic Science and Technology of China
2016-2025
Sun Yat-sen University
2023-2025
Sun Yat-sen University Cancer Center
2023-2025
National Engineering Research Center of Electromagnetic Radiation Control Materials
2016-2025
State Key Laboratory of Electronic Thin Films and Integrated Devices
2007-2025
Jiangnan University
2015-2025
State Key Laboratory of Oncology in South China
2024
Hubei University of Medicine
2022-2024
Shanxi Academy of Medical Sciences
2023
Shanxi Medical University
2023
We report a self-powered, single-electrode-based triboelectric sensor (SE-TES) array for detecting object motion inside of plastic tube. This innovative, cost-effective, simple-designed SE-TES consists thin-film-based ring-shaped Cu electrodes and polytetrafluoroethylene (PTFE) On the basis coupling effect between triboelectrification electrostatic induction, generates electric output signals in response to mechanical an (such as ball) passing through electrodes. An linearly aligned along...
A graphene-semiconductor heterojunction is very attractive for realizing highly sensitive phototransistors due to the strong absorption of semiconductor layer and fast charge transport in graphene. However, photoresponse usually limited a narrow spectral range determined by bandgap semiconductor. Here, an organic (C60 /pentacene) incorporated on graphene realize broadband (405-1550 nm) phototransistor with high gain 5.2 × 105 response time down 275 µs. The visible near-infrared parts...
We propose a type of pn-junction not formed by impurity-doping, but rather grading the Al composition in an AlxGa1−xN thin film, resulting alternating p and n conducting regions due to polarization charge. By linearly from 0% x (x ≤ 30%) back Al, induced is formed, even absence any impurity doping. X-ray diffraction reciprocal space maps are used determine strain state different graded samples. Polarization doping also provides solution problem p-type efficiency for III-nitrides.
We report a fully enclosed cylindrical single-electrode-based triboelectric nanogenerator (S-TENG) consisting of perfluoroalkoxy (PFA) ball with surface-etched nanowires, floating latex balloon, and an Al electrode at the end balloon. The mechanism S-TENG includes two independent processes: contact-induced electrification between PFA balloon electrostatic induction charged electrode. relationships electrical outputs sliding distance were systematically investigated by combining experimental...
A new method, Fe/Mg co-doping, is proposed for the first time to optimize thermochromic VO<sub>2</sub> and promising performance of VO<sub>2</sub>-based smart windows practical applications successfully achieved.
In the pursuit of broadband photodetection materials from visible to mid-IR region, fresh three-dimensional topological insulators (3D TIs) are theoretically predicted be a promising candidate due its Dirac-like stable surface state and high absorption rate. this work, self-powered inorganic/organic heterojunction photodetector based on n-type 3D TIs Bi2Te3 combined with p-type pentacene thin film was designed fabricated. Surprisingly, it found that Bi2Te3/pentacene exhibited fast wideband...
Abstract 2D materials provide an effective strategy for the construction of fast‐responsive and highly sensitive Schottky heterojunction devices. However, strong Fermi pinning at contact between bulk metallic electrodes semiconductor greatly hinders wide application such devices in optoelectronics. Herein, a self‐powered photodetector with high performance is fabricated based on all‐2D van der Waals (vdWs) composed 2H‐NbSe 2 semiconducting MoSe . Benefiting from built‐in electric field,...
Abstract The human retina is able to extract key feature information from a large amount of redundant visual information, which the basis for efficient processing in system. However, current retina‐inspired photonic synaptic devices lack fast noise filtering capabilities, limiting speed image preprocessing neuromorphic systems. Here, transistor (PST) based on graphene/organic heterojunction that exhibits high photosensitivity and optically tunable characteristics visible near‐infrared...
Methyl orange (MO) can be degraded by a photocatalytic process using TiO2 under UV irradiation. The photo-generated holes and electrons migrate to the surface of particles serve as redox sources that react with adsorbed reactants, leading formation superoxide radical anions, hydrogen peroxide hydroxyl radicals involved in oxidation dye pollution. Here, we fabricated polytetrafluoroethylene–Al based triboelectric nanogenerator (TENG) whose electric power output used for enhancing...
Polarization induced hole doping on the order of ∼1018 cm−3 is achieved in linearly graded AlxGa1−xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy. Graded and conventional Al0.7Ga0.3N layers AlN are beryllium (Be) doped via epitaxial growth. The concentration AlxGa1−xN:Be demonstrates that polarization generates charges from Be dopant. not conductive owing to absence carriers generated dopant without inducement polarization. provides an approach high efficiency p-type Al composition AlGaN.
Abstract Infrared (IR) detection at 1300–1650 nm (optical communication waveband) is of great significance due to its wide range applications in commerce and military. Three dimensional (3D) topological insulator (TI) Bi 2 Se 3 considered a promising candidate toward high‐performance IR applications. Nevertheless, the devices based on thin films are rarely reported. Here, 3D TI /MoO film heterojunction photodetector shown that possesses ultrahigh responsivity ( R i ), external quantum...
Abstract Mimicking the real‐time sensing and processing capabilities of human retina opens up a promising pathway for achieving vision chips with high‐efficient image processing. The development retina‐inspired chip also requires hardware high sensitivity, fast capture, ability to sense under various lighting conditions. Herein, high‐performance phototransistor based on graphene/organic heterojunction is demonstrated superior responsivity (2.86 × 10 6 A W −1 ), an outstanding respond speed...
The triboelectric nanogenerator (TENG) has been proved as a simple, reliable, cost-effective, and efficient means to harvest ambient mechanical energy in normal environment, although its performance evaluation under the room temperature is still lacking. Here, we systematically looked into reliance of nanogenerators output on spanning from 77 K 320 K. Employed most commonly used Polytetrafluoroethylene (PTFE) aluminum two contact materials, both voltage current show tendency increase with...
Abstract Highly performance photodetector requires a wide range of responses the incident photons and converts them to electrical signals efficiently. Here, based on formamidinium lead halide perovskite quantum dots (e.g., FAPbBr 3 QDs)–graphene hybrid, aiming take both advantages two constituents. The QD–graphene layer not only benefits from high mobility spectral absorption graphene material but also long charge carrier lifetime low dark concentration QDs. hybrid exhibits broad...
Due to the insulator–metal transition (IMT) performance covering full terahertz (THz) band, VO2 films were extensively investigated as an excellent candidate for modulating, switching, and memory devices. However, some remarkable absorption peaks owing infrared-active phonon modes suppressed films' modulation ability restricted application in high THz frequency. Here we prepared Al-doped on (111) directional silicon substrate, which rapidly counteracted peak exhibited widely modulating...
A low <italic>T</italic><sub>C</sub> and small Δ<italic>H</italic> were successfully achieved without significantly impairing THz MD by doping through an appropriate annealing process.
The intriguing carrier dynamics in graphene heterojunctions have stimulated great interest modulating the optoelectronic features to realize high-performance photodetectors. However, for most phototransistors, photoresponse characteristics are modulated with an electrical gate or a static field. In this paper, we demonstrate graphene/C60/pentacene vertical phototransistor tune both time and photocurrent based on light modulation. By exploiting power-dependent multiple states of photocurrent,...
Abstract 2D materials are extensively employed in the fabrication of high‐performance photodetectors owing to their exceptional physical properties. However, most material fail sustain high gain under intense illumination due limited intrinsic trap states. Here, an n‐n type Bi 2 O Se/SnSe van der Waals tunneling heterojunction photodetector with a detection range from visible near‐infrared (VIS‐NIR) is presented. Under reverse bias, induces significant electron barrier and hole potential...
Abstract Non‐contact gesture recognition and interaction (NGRI) revolutionizes the natural user interface, fundamentally transforming human interactions with daily‐use technology. Conventional NGRI systems frequently encounter obstacles such as pronounced latency environmental disturbances, including humidity or lighting conditions, resulting in compromised system fluidity robustness. This study highlights utilization of silicon‐based semimetal heterojunction photodetectors for precise...
ABSTRACT The electric poling behavior of poly(vinylidene fluoride) (PVDF) films was investigated by Fourier transition infrared spectrum (FT-IR), ferroelectric and piezoelectric effect test in this paper. PVDF undergoes a structural evolution under fields over wide range from 0 to 180 MV/m. phase transitions were characterized as α β via middle δ with increase poled field intensity. According hysteresis performance films, it could be found that the trend coefficient d33 which increased...