Abstract Very recently, electric‐field‐induced superconductivity in an insulator was realized by tuning charge carrier to a high density level (1 × 10 14 cm −2 ). To increase the maximum attainable for electrostatic of electronic states semiconductor field‐effect transistors is hot issue but big challenge. Here, ultrahigh accumulation reported, particular at low temperature, ZnO transistor gated electric double layers ionic liquid (IL). This transistor, called layer (EDLT), found exhibit...

The electric field effect in ferromagnetic semiconductors enables switching of the magnetization, which is a key technology for spintronic applications. We demonstrated field-induced ferromagnetism at room temperature magnetic oxide semiconductor, (Ti,Co)O(2), by means double-layer gating with high-density electron accumulation (>10(14) per square centimeter). By applying gate voltage few volts, low-carrier paramagnetic state was transformed into high-carrier state, thereby revealing...

Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric optoelectronic of nano GaTe flakes are described this article. transistor fabricated from multilayer shows a p-type action with hole mobility about 0.2 cm(2) V(-1) s(-1). gate exhibits high photoresponsivity 10(4) A/W, which is greatly better than that graphene, MoS2, other compounds. Meanwhile, the...

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the up values exceeding 10 14 cm -2 . Whereas monolayer conductivity saturates, bi- filling higher-energy bands is observed cause nonmonotonic behavior large increase quantum capacitance. These systematic trends not only show how intrinsic high-density properties can be accessed by field effect, but also demonstrate robustness...

Abstract A high‐performance ambipolar light‐emitting transistor (LET) that has high hole and electron mobilities excellent luminescence characteristics is described. By using this device, a conspicuous light‐confined edge emission current‐density‐dependent spectral evolution are observed. These findings will result in broader utilization of device potential they provide promising route for realizing electrically driven organic lasers.

The electric-double-layer (EDL) formed at liquid/solid interfaces provides a broad and interdisciplinary attraction in terms of electrochemistry, photochemistry, catalysts, energy storage, electronics because the large interfacial capacitance coupling its ability for high-density charge accumulation. Much effort has recently been devoted to fundamental understanding practical applications such highly charged EDL interfaces. However, intrinsic nature charging, whether it is electrostatics or...

Low-cost green manufacturing of single-walled carbon nanotube films via precisely controlled inkjet printing is demonstrated. This type transistor exceeds the performance conventional organic transistors, both in mobility and on/off ratio. The production exclusively inkjet-printed SWCNT transistors with printable ionic-liquid gate dielectrics also shown. Detailed facts importance to specialist readers are published as "Supporting Information". Such documents peer-reviewed, but not...

Electro-static carrier doping was attempted in a layered transition metal disulphide MoS2 by constructing an electric double-layer transistor with ionic liquid. With the application of gate voltage VG higher than 3 V, metallic behavior observed channel. We found onset field-induced superconductivity field induced phase. A maximum TC ∼ 9.4 K observed, which could be those chemically doped bulk materials.

The authors report high-density carrier accumulation and a gate-induced insulator-to-metal transition in ZnO single-crystalline thin-film field effect transistors by adopting electric double layers as gate dielectrics. Hall measurements showed that sheet density of 4.2×1013cm−2 was achieved. highest conductance at room temperature ∼1mS, which sufficient to maintain the metallic state down 10K. These results strongly suggest versatility layer gating for various materials.

The electric-double-layer (EDL) formed at liquid/solid interfaces provides a broad and interdisciplinary attraction in terms of electrochemistry, photochemistry, catalysts, energy storage, electronics. Especially recent years, much effort has been devoted to the fundamental understanding practical applications transistor configurations with EDLs because their ability for high-density charge accumulation. However, exploit additional new functionalities such an emerging interface is not only...

Electric field tuning of superconductivity has been a long-standing issue in solid state physics since the invention field-effect transistor (FET) 1960. Owing to limited available carrier density conventional FET devices, electric-field-induced was believed be possible principle but impossible practice. However, past several years, this limitation overcome by introduction an electrochemical concept, and realized. In electric double layer (EDL) formed at interfaces, extremely high is...

We have measured carrier mobility of regioregular poly(3-hexylthiophene) films by both field-effect and electrochemical doping on identical devices, which allowed us a direct comparison between the two processes. The at low levels was lower than that orders magnitudes, while steeply increased with levels, reaching comparable or higher values doping. These results are attributable to trapping Coulomb potentials dopant anions demonstrating significant difference chemical

Comparative studies of electrolyte-gated and SiO2-gated field-effect transistors have been carried out on rubrene single crystals by experimentally estimating their accumulated charges. The capacitance the electrolyte gate at 1mHz was 15μF∕cm2, which is more than two orders magnitude larger that 100-nm-thick SiO2 dielectric. maximum carrier density in 0.33hole∕molecule, considerably gate. Furthermore, transfer characteristics electrolyte-gate transistor showed reversible-peak behavior an...

We demonstrate electrostatic control of the metal-insulator transition in typical correlated-electron material NdNiO3 through a large effective capacitance electric double layer at electrolyte/NdNiO3 interface. The temperature (TMI) is shown to decrease drastically with increasing hole concentration application negative gate voltage (VG). shift TMI (|ΔTMI|) larger for thinner NdNiO3; VG −2.5 V, |ΔTMI| 5-nm-thick as 40 K, and resistivity change near 95 K one order magnitude. This study may be...

Using ionic-liquid (IL) gating in electric-double-layer transistors (EDLTs), we investigate field-effect electrical transport properties of ultrathin epitaxial films a topological insulator (TI), Bi2Te3. Because their extreme thinness, the Bi2Te3 show band gap opening and resulting semiconducting properties. Near room temperature, an obvious ambipolar transistor operation with ON-OFF ratio close to 103 was observed transfer characteristics liquid-gated EDLTs further confirmed by sign change...

Ambipolar electric double-layer transistors (EDLTs) using organic single crystals and ion-gel electrolytes are successfully created by optimising the fabrication of gel films. The p- n-type EDLTs enable us to investigate HOMO-LUMO gap energy semiconductors, offering a new method with which measure it. Detailed facts importance specialist readers published as ”Supporting Information”. Such documents peer-reviewed, but not copy-edited or typeset. They made available submitted authors. Please...

We report the synthesis and characterization of two new furan-based biphenyl end-capped oligomers, 2-([1,1′-biphenyl]-4-yl)-5-(5-([1,1′-biphenyl]-4-yl)thiophen-2-yl)furan (BPFT) 5,5′-di([1,1′-biphenyl]-4-yl)-2,2′-bifuran (BP2F) as candidate semiconductors for organic light-emitting field effect transistors (OLETs). Differential scanning calorimetry (DSC) thermogravimetric analysis (TGA) showed high thermostability these semiconductors. X-Ray crystallography single crystals grown by physical...

Electric double-layer transistors have recently attracted a growing interest because of their low operating voltage and capacity for accumulation high carrier density. Here, we demonstrate an electric transistor with NiO single-crystal Mott insulator that displays p-type behavior field-effect mobility on/off ratio 1.6×10−4cm2∕Vs 130, respectively. Despite relatively poor device performance, the present results is not limited to normal band insulators but achievable using insulators, in which...

In order to clarify its electric double layer (EDL) structure under external voltage, an interface between the ionic liquid N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide and a Au (111) surface was studied by x-ray reflectometry. A clear change in reflectivity observed as function of applied voltage. The electron density profile around calculated using models. Switching field reversed polarity EDL, magnitude voltage controlled layering well molecular...

In electric double layer transistors with SrTiO3 single crystals, we found distinct differences between electrostatic charge accumulation and electrochemical reaction depending on bias voltages. contrast to the reversible process below 3.7 V a maximum sheet carrier density, nS, of 1014 cm-2, causes persistent conduction even after removal gate above 3.75 V. nS reached 1015 cm-2 at 5 V, electron mobility 2 K was as large 104 cm2/Vs. This originates from defect formation within few micrometers...