A5045677032- 2D Materials and Applications
- Advanced Memory and Neural Computing
- Perovskite Materials and Applications
- MXene and MAX Phase Materials
- Graphene research and applications
- Advanced Photocatalysis Techniques
- Multiferroics and related materials
- Gas Sensing Nanomaterials and Sensors
- Photoreceptor and optogenetics research
- Topological Materials and Phenomena
- Ferroelectric and Piezoelectric Materials
- Ferroelectric and Negative Capacitance Devices
- earthquake and tectonic studies
- Photonic and Optical Devices
- Quantum Dots Synthesis And Properties
- Neural Networks and Reservoir Computing
- Chalcogenide Semiconductor Thin Films
- Electronic and Structural Properties of Oxides
- Geological and Geochemical Analysis
- Quantum and electron transport phenomena
- Advanced Condensed Matter Physics
- Photorefractive and Nonlinear Optics
- Innovative concrete reinforcement materials
- Advanced Sensor and Energy Harvesting Materials
- Acoustic Wave Resonator Technologies
Huzhou University
2021-2025
University of Electronic Science and Technology of China
2018-2025
National Engineering Research Center of Electromagnetic Radiation Control Materials
2023-2025
Chinese Academy of Geological Sciences
2021-2024
Ministry of Natural Resources
2021-2024
Institute of New Materials
2023-2024
Hunan University of Science and Technology
2024
Yanshan University
2024
Zhangzhou Vocational and Technical College
2024
Zhejiang University of Technology
2022-2023
Abstract Two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such ferroelectricity in the 2D limit not been well explored. Here, we report room-temperature CuInP 2 S 6 (CIPS) with a transition temperature of ∼320 K. Switchable polarization is observed thin CIPS ∼4 nm. To demonstrate potential this ferroelectric...
Due to the novel optical and optoelectronic properties, 2D materials have received increasing interests for optoelectronics applications. Discovering new properties functionalities of is challenging yet promising. Here broadband polarization sensitive photodetectors based on few layer ReS 2 are demonstrated. The transistor shows an n‐type behavior with mobility about 40 cm V −1 s on/off ratio 10 5 . dependence photoresponse ascribed unique anisotropic in‐plane crystal structure, consistent...
The discovery of monolayer superconductors bears consequences for both fundamental physics and device applications. Currently, the growth superconducting monolayers can only occur under ultrahigh vacuum on specific lattice-matched or dangling bond-free substrates, to minimize environment- substrate-induced disorders/defects. Such severe requirements limit exploration novel two-dimensional superconductivity related nanodevices. Here we demonstrate experimental realization in a chemical vapour...
Two-dimensional (2D) materials such as graphene, hexagonal boron nitrides (hBN), and transition metal dichalcogenides (TMDs, e.g., MoS2) have attracted considerable attention in the past few years because of their novel properties versatile potential applications. These 2D layers can be integrated into a monolayer (lateral heterostructure) or multilayer stack (vertical heterostructure). The resulting artificial structures provide access to new applications beyond component atomic crystals...
Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric optoelectronic of nano GaTe flakes are described this article. transistor fabricated from multilayer shows a p-type action with hole mobility about 0.2 cm(2) V(-1) s(-1). gate exhibits high photoresponsivity 10(4) A/W, which is greatly better than that graphene, MoS2, other compounds. Meanwhile, the...
Emulation of brain-like signal processing with thin-film devices can lay the foundation for building artificially intelligent learning circuitry in future. Encompassing higher functionalities into single artificial neural elements will allow development robust neuromorphic emulating biological adaptation mechanisms drastically lesser elements, mitigating strict process challenges and high circuit density requirements necessary to match computational complexity human brain. Here, 2D...
Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for optoelectronic applications. Identifying new promising will be rewarding toward development next generation electronics. Here, palladium diselenide (PdSe 2 ), noble‐transition metal dichalcogenide (TMDC), is introduced as high mobility material into fast growing community. Field‐effect transistors (FETs) based on ultrathin PdSe show intrinsic ambipolar characteristic. The polarity FET...
Abstract The demand for computing power has been increasing exponentially since the emergence of artificial intelligence (AI), internet things (IoT), and machine learning (ML), where novel primitives are required. Brain inspired neuromorphic systems, capable combining analog data storage at device level, have drawn great attention recently. In addition, basic electronic devices mimicking biological synapse achieved significant progress. Owing to their atomic thickness reduced screening...
In this work, we have demonstrated the synthesis of high-quality monolayered α-In2Se3 using physical vapor deposition method under atmospheric pressure. The quality In2Se3 atomic layers has been confirmed by complementary characterization technologies such as Raman/photoluminescence spectroscopies and force microscope. atomically resolved images obtained annular dark-field scanning transmission electron field-effect transistors fabricated layered exhibit p-type semiconducting behaviors with...
Nonlinear 2D layered crystals provide ideal platforms for applications and fundamental studies in ultrathin nonlinear optical (NLO) devices. However, the NLO frequency conversion efficiency constrained by lattice symmetry is still limited layer numbers of crystals. In this work, 3R MoS 2 with broken inversion structure are grown proved to be excellent from monolayer (0.65 nm) toward bulk‐like (300 dimension. Thickness wavelength‐dependent second harmonic generation spectra offer selection...
We report naturally occurring van der Waals heterostructural single crystals with intrinsic magnetic topological properties.
Lattice topology and anisotropic chemical bonds underpin unusual negative longitudinal piezoelectricity in van der Waals solids.
Large-area and high-quality 2D transition metal tellurides are synthesized by the chemical vapor deposition method. The as-grown WTe2 maintains two different stacking sequences in bilayer, where atomic structure of boundary is revealed scanning transmission electron microscopy. low-temperature transport measurements reveal a novel semimetal-to-insulator layers an enhanced superconductivity few-layer MoTe2 .
Abstract 2D materials are considered as intriguing building blocks for next‐generation optoelectronic devices. However, their photoresponse performance still needs to be improved practical applications. Here, ultrasensitive phototransistors reported employing chemical vapor deposition (CVD)‐grown Bi 2 O Se transferred onto silicon substrates with a noncorrosive transfer method. The as‐transferred preserves high quality in contrast the serious degradation hydrofluoric‐acid‐assisted transfer....
Abstract The Boltzmann distribution of electrons sets a fundamental barrier to lowering energy consumption in metal-oxide-semiconductor field-effect transistors (MOSFETs). Negative capacitance FET (NC-FET), as an emerging architecture, is promising overcome this thermionic limit and build ultra-low-power consuming electronics. Here, we demonstrate steep-slope NC-FETs based on two-dimensional molybdenum disulfide CuInP 2 S 6 (CIPS) van der Waals (vdW) heterostructure. vdW NC-FET provides...
When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, interfacial charge transfer results reversal of structure's spontaneous polarization. This phenomenon is known as sliding ferroelectricity and it markedly different from conventional ferroelectric switching mechanisms relying on ion displacement. Here, we present layer dependence new dimension to control ferroelectricity. By fabricating 3 R MoS
Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance such devices. We report a fatigue-free system based on sliding ferroelectricity bilayer 3R molybdenum disulfide (3R-MoS 2 ). The memory performance this device does not show wake-up effect at low cycles or substantial...
Abstract Two-dimensional (2D) magnetic systems possess versatile order and can host tunable magnons carrying spin angular momenta. Recent advances show momentum also be carried by lattice vibrations in the form of chiral phonons. However, interplay between phonons as well details phonon formation a system are yet to explored. Here, we report observation magnon-induced chirality selective magnon-phonon hybridization layered zigzag antiferromagnet (AFM) FePSe 3 . With combination...
In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by external field, stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile electrically switchable feature have exhibited enormous potential controlling electronic optoelectronic leading to...
Atomically layered 2D crystals such as transitional metal dichalcogenides (TMDs) provide an enchanting landscape for optoelectronic applications due to their unique atomic structures. They have been most intensively studied with 2H phase easy fabrication and manipulation. 1T material could possess better electrocatalytic photocatalytic properties, while they are difficult fabricate. Herein, the first time, atomically tin diselenides (SnSe 2 , III‐IV compound) successfully exfoliated by...
A metal-semiconductor phase transition in a ternary metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe2 (WSe2(1-x) Te2x , where x = 0%-100%). The optical bandgaps of the WSe2(1-x) can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops 0 (1Td metal), which opens up an exciting opportunity functional electronic/optoelectronic devices.