A5081762519- Electronic and Structural Properties of Oxides
- 2D Materials and Applications
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Electrocatalysts for Energy Conversion
- Advanced Photocatalysis Techniques
- Chalcogenide Semiconductor Thin Films
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Nanostructures and Photoluminescence
- Advanced Memory and Neural Computing
- Graphene research and applications
- Quantum Dots Synthesis And Properties
- Ferroelectric and Piezoelectric Materials
- Perovskite Materials and Applications
- Plasma Diagnostics and Applications
- Photonic Crystals and Applications
- Magnetic and transport properties of perovskites and related materials
- Thin-Film Transistor Technologies
- Diamond and Carbon-based Materials Research
- Advanced Semiconductor Detectors and Materials
- Catalytic Processes in Materials Science
- Electrochemical Analysis and Applications
- Semiconductor materials and interfaces
- Advanced Thermoelectric Materials and Devices
- ZnO doping and properties
University of Minnesota
2019-2024
Twin Cities Orthopedics
2020-2023
Western Digital (United States)
2023
Nanyang Technological University
2019-2022
Atom-thin transition metal dichalcogenides (TMDs) have emerged as fascinating materials and key structures for electrocatalysis. So far, their edges, dopant heteroatoms defects been intensively explored active sites the hydrogen evolution reaction (HER) to split water. However, grain boundaries (GBs), a type of in TMDs, overlooked due low density large structural variations. Here, we demonstrate synthesis wafer-size atom-thin TMD films with an ultra-high-density GBs, up ~1012 cm-2. We...
The coexistence of metallic and semiconducting polymorphs in transition-metal dichalcogenides (TMDCs) can be utilized to solve the large contact resistance issue TMDC-based field effect transistors (FETs). A hexagonal (2H) molybdenum ditelluride (MoTe2) phase, monoclinic (1T') MoTe2 their lateral homojunctions selectively synthesized situ by chemical vapor deposition due small free energy difference between two phases. Here, we have investigated, detail, structural electrical properties...
The alkaline earth stannates are touted for their wide band gaps and the highest room-temperature electron mobilities among all of perovskite oxides. CaSnO3 has measured gap in this family is thus a particularly promising ultrawide semiconductor. However, discouraging results from previous theoretical studies failed doping attempts had described material as "undopable". Here we redeem using hybrid molecular beam epitaxy, which provides an adsorption-controlled growth phase-pure, epitaxial,...
Black arsenic (BAs) is a van der Waals layered material with puckered honeycomb structure and has received increased interest due to its anisotropic properties promising performance in devices. Here, crystalline structure, thickness-dependent dielectric responses, ambient stability of BAs nanosheets are investigated using STEM imaging spectroscopy. Atomic-resolution HAADF-STEM images directly visualize the three-dimensional evaluate degree anisotropy. STEM-EELS used measure response as...
Scaling semiconductor devices necessitates the fabrication of high-aspect-ratio narrow features through precise etching multiple layers comprising alternating materials, each with sub-20 nm thickness. However, dissimilar such as metal and oxide layers, pose significant challenges due to inherent discrepancies in vertical lateral etch rates. This study demonstrates feasibility a stack 10 silicon dioxide (SiO2) molybdenum (Mo) using an Oxford Instruments ICP RIE tool operating at low power...
Black arsenic (BAs) is an elemental van der Waals semiconductor that promising for a wide range of electronic and photonic applications. The narrow bandgap symmetric band structure suggest ambipolar (both n- p-type) transport should be observable, however, only p-type has been experimentally studied to date. Here, we demonstrate characterize in exfoliated BAs field effect transistors. In the thickest flakes (∼ 80 nm), maximum currents, I max, up 60 μA μm-1 90 μm-1are achieved hole electron...
We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). This device utilizes the effective mass anisotropy between armchair (AC) and zigzag (ZZ) crystal orientations in BP as means inducing asymmetry source drain tunneling. As result this asymmetry, TFET displays higher I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> /I xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub>...
Black arsenic phosphorus single crystals were grown using a short-way transport technique resulting in up to 12 × 110μmand ranging from 200 nm 2μmthick. The reaction conditions require tin, tin (IV) iodide, gray arsenic, and red placed an evacuated quartz ampule ramped maximum temperature of 630 °C. crystal structure elemental composition characterized Raman spectroscopy, x-ray diffraction, photoelectron cross-sectional transmission microscopy, electron backscatter diffraction. data provides...
This work reports the quantification of rise in channel temperature due to self-heating two-terminal SrSnO3 thin film devices under electrical bias. Using pulsed current–voltage (I–V) measurements, thermal resistances films were determined by extracting relationship between and dissipated power. For a 26-nm-thick n-doped with an area 200 μm2, resistance 260.1 ± 24.5 K mm/W was obtained. modest power 0.5 W/mm, rose ∼176 °C, value which increases further at higher levels. Electro-thermal...
We report the results of metal contact resistance, RC, to Nd-doped n-type SrSnO3 films grown by radical-based hybrid molecular beam epitaxy. Sc, Mn, Ti, Al, and Cr layers were deposited onto heavily doped thin films. With no annealing, Al contacts found be highly resistive, while Ti more conductive, with Mn having lowest RC 11 ± 3 Ω-mm, immediately after liftoff. After Al2O3 passivation at 200 °C, all showed Ohmic behavior, = 2.4 0.3 Ω-mm a resultant sheet RS, 1.66 0.07 kΩ/◻. Specific...
Abstract Understanding the kinetics of interfacial reaction in deposition metal contacts on 2D materials is important for determining level contact tenability and nature itself. Here, we find that some metals, when deposited onto layered black-arsenic films using e-beam evaporation, form a-few-nm thick distinct intermetallic layer significantly change contact. In case nickel, Ni 11 As 8 , whereas cases chromium titanium they are CrAs a-Ti 3 As, respectively, with their unique structural...
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Given the ever increasing, global electricity consumption, improving efficiency and reliability of high-power electronics is paramount importance. Ultra-wide band gap (> 3.4 eV) semiconductors have shown potential to be used in next generation power due their high breakdown field mobility. Specifically, high-quality growth doped strontium stannate perovskite-oxide (SSO) has been recently demonstrated. The thermal properties this novel material, however, not fully investigated could limiting...
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Abstract Rational design of noble catalysts with a potential to leverage efficiency at the atomic scale is vital for industrial applications. Such an ultimate atom-utilization can be achieved when all atoms exclusively contribute catalysis. Here, we demonstrate scalable synthesis freestanding amorphous PtSe x (where 1.2 < 1.3) layers acting as single-atom-layer Pt unprecedentedly high (~ 30 wt%) monolayer limit. The behaviors fully-activated surface accessible catalytic reactions....