A5084609046- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Electronic and Structural Properties of Oxides
- Copper Interconnects and Reliability
- Advanced Sensor and Energy Harvesting Materials
Electronics and Telecommunications Research Institute
2013-2018
Korea University of Science and Technology
2013-2018
In this work, buffer layers with various conditions are inserted at an n/i interface in hydrogenated amorphous silicon semitransparent solar cells. It is observed that the performance of a cell strongly depends on arrangement and thickness layer. When arranging bandgaps ascending order from intrinsic layer to n layer, relatively high open circuit voltage short current observed. addition, fill factors improved, owing enhanced shunt resistance under every instance introduced layers. Among...
In this study, we describe the effects of various thicknesses triple p/i buffer layers and hydrogen treatment on performances in fabrication transparent a-Si:H solar cells. For increment layer thickness, V(oc) increases steadily J(sc) firstly then decreases. The also enhance transmittance as well conversion efficiency. plasma treatment, overall were enhanced with power due to passivation dangling bonds at interface. Therefore, usage proper is beneficial obtaining cells high quality.