A5049051360- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Copper Interconnects and Reliability
- Electromagnetic Compatibility and Noise Suppression
- GaN-based semiconductor devices and materials
- Silicon and Solar Cell Technologies
- Ga2O3 and related materials
- Multilevel Inverters and Converters
- Religion, Society, and Development
- Integrated Circuits and Semiconductor Failure Analysis
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- ZnO doping and properties
- HVDC Systems and Fault Protection
- Thin-Film Transistor Technologies
- Induction Heating and Inverter Technology
- Electronic and Structural Properties of Oxides
- Advanced DC-DC Converters
- Aluminum Alloys Composites Properties
- Silicon Nanostructures and Photoluminescence
- International Development and Aid
- Advanced Photocatalysis Techniques
- Advanced ceramic materials synthesis
Clinical Trial Investigators
2025
Swansea University
2005-2024
Johns Hopkins Hospital
2024
Johns Hopkins Medicine
2024
Johns Hopkins University
2024
University of California, Santa Barbara
1997-2021
Georgetown University
2021
American Political Science Association
2021
Randolph–Macon College
2021
University of Houston
2021
The family of spinel compounds is a large and important class multifunctional materials general formulation AB2X4 with many advanced applications in energy optoelectronic areas such as fuel cells, batteries, catalysis, photonics, spintronics, thermoelectricity. In this work, it demonstrated that the ternary ultrawide-band-gap (∼5 eV) zinc gallate (ZnGa2O4) arguably native p-type oxide semiconductor largest Eg value (in comparison recently discovered binary monoclinic β-Ga2O3 oxide). For...
Here a physically based channel mobility model has been developed to investigate the temperature dependence of field-effect 4H-SiC metal-oxide-semiconductor (MOS) transistors with thermally oxidized gate insulators. This designed so that it accounts for high density traps at MOS interface. is key issue silicon carbide electronics, as its basic material properties make foremost semiconductor power/high electronic devices in applications such spacecraft, aircraft, automobile, and energy...
For the first time, I-V-T dataset of a Schottky diode has been accurately modelled, parameterised, and fully fit, incorporating effects interface inhomogeneity, patch pinch-off resistance, ideality factors that are both heavily temperature voltage dependent. A Ni/SiC is characterised at 2 K intervals from 20 to 320 K, which, room temperature, displays low (n < 1.01) suggest these diodes may be homogeneous. However, cryogenic temperatures, excessively high > 8), dependent...
A method to improve thermal management of β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> FETs is demonstrated here via simulation epitaxial growth on a 4H-SiC substrate. Using recently published device as model, the reduction achieved in self-heating allows be driven at higher gate voltages and increases overall performance. For same operating parameters an 18% increase peak...
As GaN technology continues to gain popularity, it is necessary control the ohmic contact properties and improve device consistency across whole wafer. In this paper, we use a range of submicron characterization tools understand conduction mechanisms through AlGaN/GaN contact. Our results suggest that there direct path for electron flow between two dimensional gas pad. The estimated area these highly conductive pillars around 5% total area.
In this paper we investigate the physical and electrical properties of silicon layers grown by molecular beam epitaxy on 4H-SiC substrates, evaluating effect Si doping, temperature deposition, SiC surface cleaning procedure. Si∕SiC monolithic integration circuits with power devices can be considered as an attractive proposition has potential to applied a broad range applications. X-ray diffraction scanning electron microscopy are used determine crystal structure (cubic silicon) morphology....
The temperature dependence and stability of three different commercially-available unpackaged SiC Dmosfets have been measured. On-state resistances increased to 6 or 7 times their room values at 350 °C. Threshold voltages almost doubled after tens minutes positive gate voltage stressing 300 °C, but approached original again only one two negative bias stressing. Fortunately, the change in drain current due these threshold instabilities was negligible. However, approaches zero volts high...
A novel 1500°C gate oxidation process has been demonstrated on Si face of 4H-SiC. Lateral channel metal-oxide-semiconductor-field-effect-transistors (MOSFETs) fabricated using this have a maximum field effect mobility approximately 40 cm\ <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> V xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> s without post passivation. This is substantially higher than other reports MOSFETs with thermally...
The physical and electrical properties of heterojunctions formed by direct wafer bonding are presented. Atomic force microscopy (AFM) imaging reveal an improved quality when Si wafers transferred to on-axis substrates as opposed off-axis epitaxial layers. AFM analysis the bonded achieves a smoother surface compared molecular beam epitaxy–grown A reduced roughness only was measured for wafers. Current-voltage measurements were used extract rectifying characteristics heterojunctions. These...
In this article Schottky barrier diodes comprising of a n-n germanium-silicon carbide (Ge–SiC) heterojunction are electrically characterized. Circular transmission line measurements prove that the nickel front and back contacts Ohmic, isolating Ge/SiC as only contributor to behavior. Current-voltage plots taken at varying temperature (IVT) reveal ideality factor (n) height (SBH) (Φ) dependent incorrect values Richardson constant (A∗∗) being produced, suggesting an inhomogeneous barrier....
This paper describes the thermal oxidation of Si/SiC heterojunction structures, produced using a layer-transfer process, as an alternative solution to fabricating SiC metal-oxide-semiconductor (MOS) devices with lower interface state densities (Dit). Physical characterization demonstrate that transferred Si layer is relatively smooth, uniform, and essentially monocrystalline. The on has been totally or partially thermally oxidized at 900–1150 °C. Dit for both completely silicon layers were...
Despite the material advantages of Silicon-Carbide (SiC), on resistance 4H-SiC metal-oxide-semiconductor transistors are severely degraded by high trap densities near oxide/SiC interface (D it ). In this work, effect oxidation ambient (oxygen flow rates 0.05 l/min-2.5 l/min) and temperature (1200°C-1600°C) D is investigated. The was reduced up to an order magnitude using a combination low oxygen rate temperature. extracted from capacitance-voltage measurements made MOS capacitors.
The physical and electrical properties of heavily doped silicon (5×1019 cm−3) deposited by molecular beam epitaxy (MBE) on 4H-SiC are investigated in this paper. Silicon layers carbide have a broad number potential applications including device fabrication or passivation when oxidised. In particular, Si/SiC contacts present several atractive material advantages for the semiconductor industry especially SiC processing procedures avoiding stages such as high temperature contact annealing...
This paper presents a detailed physical and electrical analysis of 4H-SiC ohmic contacts to p-type material, the main aim being examine their ruggedness under high temperature conditions. XRD, FIB-TEM SEM are techniques that have been utilized microstructure interface properties respectively. A study revealed presence crystalline hexagonal Ti layer orientated in same direction as epitaxial layer. factor seems be important terms performance, having lowest measured specific contact resistivity...
Major recent developments in growth expertise related to the cubic polytype of Silicon Carbide, 3C-SiC, coupled with its remarkable physical properties and low fabrication cost, suggest that within next years, 3C-SiC devices can become a commercial reality. Inevitably, comparison most well-developed SiC, 4H-SiC, should exist. It is, therefore, important develop finite element method techniques models for accurate device design, analysis, comparison. is also needed perform an exhaustive...
A 4H‐SiC trench metal–oxide–semiconductor field‐effect‐transistor (MOSFET) design with an integrated merged PiN Schottky (MPS) diode is proposed. The contact embedded on the bottom of structure for first time. low electric field in oxide and surface can be achieved simultaneously using proposed integration which enhances reliability reduces leakage from diode. MPS total chip area required number dies compared conventional method external