A5100373590- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Electromagnetic Compatibility and Noise Suppression
- Advancements in Semiconductor Devices and Circuit Design
- Copper Interconnects and Reliability
- Thin-Film Transistor Technologies
- Photonic and Optical Devices
- Silicon and Solar Cell Technologies
- Semiconductor Lasers and Optical Devices
- Advanced DC-DC Converters
- Microwave Engineering and Waveguides
- Advanced Sensor and Control Systems
- Advanced ceramic materials synthesis
- Semiconductor Quantum Structures and Devices
- Aluminum Alloys Composites Properties
- HVDC Systems and Fault Protection
- Induction Heating and Inverter Technology
- Power Transformer Diagnostics and Insulation
- Electronic Packaging and Soldering Technologies
- Engineering and Test Systems
- Ga2O3 and related materials
- Blind Source Separation Techniques
- Simulation and Modeling Applications
- Evaluation and Optimization Models
Chinese Academy of Sciences
2005-2024
Institute of Engineering Thermophysics
2024
Hubei Provincial Water Resources and Hydropower Planning Survey and Design Institute
2023
University of Warwick
2013-2022
Shandong Jianzhu University
2022
Beijing Microelectronics Technology Institute
2022
Xi’an Jiaotong-Liverpool University
2021
University of Liverpool
2021
Institute of Mechanics
2019
State Grid Hebei Electric Power Company
2018-2019
We report on the development of a high-power tunable yellow-orange laser. It is based intracavity frequency doubling widely tunable, highly strained InGaAs-GaAs vertical-external-cavity surface-emitting laser operating near 1175 nm. Over 5 W continuous-wave output power achieved and over 15-nm band centered at 587 This compact low-cost provides an innovative alternative for sodium guidestar lasers, medical communication applications.
A novel CPW-fed triple-band monopole antenna designed by embedding an S-shaped meander strip into a C-shaped is proposed for WLAN and WiMAX applications. The with very simple compact structure easy to be fabricated, the prototype of has been constructed measured. triple operating bands 10-dB return-loss bandwidths about 110MHz centered at 2.45GHz, 310MHz 3.55GHz, 39% ranging from 4.1 6.2GHz, covering required 2.4/5.2/5.8GHz 3.5/5.5GHz standards, are obtained. In addition, good radiation...
Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated with a phosphorus pentoxide (P2O5) surface passivation treatment performed on the SiC prior to metallization. Compared untreated diodes, P2O5-treated were found lower height by 0.11 eV and leakage current two three orders of magnitude. Physical characterization Mo/SiC interfaces revealed that there are primary causes for improvement in electrical performance. First, transmission electron microscopy imaging...
This paper presents a detailed physical and electrical analysis of 4H-SiC ohmic contacts to p-type material, the main aim being examine their ruggedness under high temperature conditions. XRD, FIB-TEM SEM are techniques that have been utilized microstructure interface properties respectively. A study revealed presence crystalline hexagonal Ti layer orientated in same direction as epitaxial layer. factor seems be important terms performance, having lowest measured specific contact resistivity...
This paper analyses the effect of employing an Si on semi-insulating SiC (Si/SiC) device architecture for implementation 600-V LDMOSFETs using junction isolation and dielectric reduced surface electric field technologies high-temperature operations up to 300 °C. Simulations are carried out two Si/SiC transistors designed with either PN or silicon-on-insulator (SOI) their equivalent structures bulk-Si SOI substrates. Through comparisons, it is shown that devices have potential operate...
Novel silicon-on-silicon carbide (Si/SiC) substrates are being developed in order to produce lateral power devices for harsh environment applications. Two methods of producing 100 mm Si/SiC detailed by wafer bonding silicon-on-insulator (SOI) wafers semi-insulating 4H-SiC, then removing the SOI handle and buried oxide. The final process includes a radical activation with low temperature processing, resulting 97% yield. A uniform oxide layer at interface 1.4–1.8 nm is revealed, without voids,...
This letter reports on the improvement of a SiO2 layer formed by atomic deposition 4H-SiC, using post-deposition anneal in forming gas ambient. Capacitance–voltage measurements revealed good electrical properties, compared to thermal oxide which was grown N2O, with flatband voltage values averaging at -0.29 V and low positive mobile ion charge density order 1010 cm−2. XPS analysis FG annealed sample have most Si rich interface comparatively other PDAs, C:Si ratio 0.72, allowing more bonds be...
Direct bonded Si-on-SiC is an interesting alternative to silicon-on-insulator (SOI) for improved thermal management in power conversion and radio frequency applications space. We have used transient thermoreflectance finite element simulations characterize the properties of direct Si-on-4H–SiC samples, utilizing a hydrophobic hydrophilic bonding process. In both instances, interface has good resulting TBReff values 6 + 4/−2 m2 K GW−1 (hydrophobic) 9 3/−2 (hydrophilic). Two-dimensional...
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present low resistivity ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim 3\times 10^{\mathrm {{-5}}} \Omega ~\cdot $ </tex-math></inline-formula> cm notation="LaTeX">$^{2})$ ohmic...
A class of vertical 1700-V 4H-SiC superjunction (SJ) Schottky diodes have been simulated and optimized, producing results that are below the unipolar limit, while also ensuring practical costeffective realization. conventional SJ is obtained in T-CAD software, using an n-type drift region 9-μm etching trenches through this to substrate leave isolated mesa structures. P-columns then created implantation into trench sidewalls. The charge-balanced diode maximizes breakdown voltage ( V <sub...
A class of vertical 1700 V 4H-silicon carbide (SiC) semi-superjunction (SJ) Schottky diodes have been simulated and optimized to ensure practical cost-effective realization. The proposed structures could be realized using an n-type drift region 9- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> etching trenches partway through this form the required mesa regions....
This work presents a novel Si-on-SiC laterally-diffused (LD) MOSFET structure intended to provide high breakdown voltage of 600 V and be resistant for harsh-environment space applications. Single-event effects (SEE) total ionizing dose (TID) are investigated the first time in such device. Initially, considered Si LDMOS on SiC suffers from single-event burnout (SEB) at drain > 175 V, i.e. much lower than target. An optimized with heavily doped extended P <sup...
Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on reliability SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layers 3C-SiC, which crucial power MOS device developments. This article presents comprehensive study mediumand long-term time-dependent dielectric breakdowns (TDDBs) 65-nm-thick thermally grown state-of-the-art 3C-SiC/Si wafer. Fowler-Nordheim (F-N) tunneling observed above 7 MV/cm...
Two commercial 1.2 kV SiC MOSFETs have been extensively characterised from 30 to 320 K. The temperature dependence of their I/V characteristics, threshold voltage, and breakdown voltage has examined are presented in this paper. Overall, the measured characteristics both devices demonstrate very similar dependencies it is shown that below ~100 K any further decrease little effect on tested characteristics. Increasing beyond 100 results a drain current for given drain-source gate-source an...
In this work we studied the gate oxidation temperature and nitridation influences on resultant 3C-SiC MOSFET forward characteristics. Conventional long channel lateral MOSFETs were fabricated 3C-SiC(100) epilayers grown Si substrates using five different process. Both room high (up to 500K) IV performance characterised, mobility as 90cm 2 /V.s was obtained for devices with nitrided oxide, considerable higher than ones without process (~70 cm /V.s).
The 4H-SiC Schottky diode with 2-step mesa junction termination extension (JTE) structure has been investigated and optimized using SILVACO device simulator. Comparisons between different JTE structures of breakdown voltage electric field crowding for diodes have made. Simulation results show that the Space Modulated two-zone highest which is about 97% ideal 1D parallel plane conditions. With novel MESA Single Implant JTE, could achieve same as votlage. influences surface charge (Qs) oxide...
A systematic post-deposition annealing study on Silicon Carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) using atomic layer deposition (ALD)-deposited silicon dioxide (SiO 2 ) layers was carried out. Anneals were done in oxidising (N O), inert (Ar) and reducing (H :N ambients at elevated temperatures from 900°C to 1300°C for 1 hour. Electrical characterisation results show that the forming gas treatment 1100°C reduces flatband voltage 0.23 V 10 as-deposited SiO2 layers. The...
This paper presents and compares different avalanche breakdown voltage estimation methods in 4H-SiC (silicon carbide) using finite element simulation results on Schottky diode. depletion width estimated with Baligas equations have shown to be higher than other techniques results, especially for voltages 5kV. discusses the impact of choosing junction termination extension (JTE) structures two-dimensional curvature effects electric field crowding diodes Space-Modulated JTE (SMJTE) structure...
A new generation of power electronic semiconductor devices are being developed for the benefit space and terrestrial harsh-environment applications. 200-600 V lateral transistors diodes fabricated in a thin layer silicon (Si) wafer bonded to semi-insulating 4H carbide (SiC) leading Si/SiC substrate solution that promises combine benefits silicon-on-insulator (SOI) technology with SiC. Here, details process given produce films 1 2 μm thick on Simple metal-oxide-semiconductor capacitors...