A5100367458- Perovskite Materials and Applications
- Conducting polymers and applications
- Organic Electronics and Photovoltaics
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Advanced Memory and Neural Computing
- Organic Light-Emitting Diodes Research
- TiO2 Photocatalysis and Solar Cells
- Advanced Photocatalysis Techniques
- Power Systems and Renewable Energy
- Transition Metal Oxide Nanomaterials
- Polyoxometalates: Synthesis and Applications
- Neuroscience and Neural Engineering
- Solid-state spectroscopy and crystallography
- Maritime Transport Emissions and Efficiency
- Advanced Sensor and Energy Harvesting Materials
- Nanopore and Nanochannel Transport Studies
- Advanced Measurement and Metrology Techniques
- High-Voltage Power Transmission Systems
- Scientific Measurement and Uncertainty Evaluation
- Radioactive Decay and Measurement Techniques
- Simulation and Modeling Applications
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Rural development and sustainability
Chongqing University of Technology
2010-2024
University of Macau
2022-2024
Taiyuan Heavy Industry (China)
2024
Northwest A&F University
2024
Chinese Academy of Sciences
2015-2024
Shanghai Advanced Research Institute
2024
University of Chinese Academy of Sciences
2024
Southwest University
2014-2023
Chongqing University
2010-2022
Chongqing 2D Materials Institute (China)
2022
Abstract Coexistence of negative differential resistance (NDR) and resistive switching (RS) memory is observed using a Ag|TiO x |F‐doped‐SnO 2 cell at room temperature. Unlike other reports, the coexistence NDR RS strongly depends on relative humidity levels The disappears when cells are placed in dry air ambient (H O < 5 ppm) or vacuum, but emerges gradually becomes obvious after exposed to with 35%, then dramatically enhanced as higher. Due excellent stability reversibility RS,...
In this study, a NiO-based resistive memristor was manufactured using solution combustion method. device, both analog and digital bipolar switching were observed. They are dependent on the stressed bias voltage. Prior to electroforming, realized through change of Schottky barrier at p-type NiO/Ag junction by local migration oxygen ion in interface. On basis switching, several synaptic functions demonstrated, such as nonlinear transmission characteristics, spike-rate-dependent plasticity,...
Poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate (PEDOT:PSS) plays an important role in inverted planar perovskite solar cells (IPPSCs) as efficient hole extraction and transfer layer (HTL). The IPPSCs based on PEDOT:PSS normally display inferior performance with a reduced open-circuit voltage. To address this problem, here sodium citrate-doped is adopted effective HTL for improving the of IPPSCs. Sodium improves conversion efficiency from 15.05% reference to 18.39%. large increase...
The continuing increase of the efficiency perovskite solar cells has pushed internal quantum approaching 100%, which means light-to-carrier and then following carrier transportation extraction are no longer limiting factors in photoelectric conversion cells. However, optimal is still far lower than Shockley-Queisser limit, especially for those inverted cells, indicating that a significant fraction light does not transmit into active layer to be absorbed there. Here, planar cell...
FA-based perovskite devices with reduced Pb contents were prepared.
In this work, we investigate the effect of thickness polyethylenimine ethoxylated (PEIE) interface layer on performance two types polymer solar cells based inverted poly(3-hexylthiophene) (P3HT):phenyl C61-butryric acid methyl ester (PCBM) and thieno[3,4-b]thiophene/benzodithiophene (PTB7):[6,6]-phenyl C71-butyric (PC71BM). Maximum power conversion efficiencies 4.18% 7.40% were achieved at a 5.02 nm thick PEIE layer, for above-mentioned cell types, respectively. The optimized provides strong...
The higher film coverage and better device performance is achieved for spin-coated in air then annealed vacuum.
Egg albumen is modified by hydrogen peroxide with concentrations of 5%, 10%, 15% and 30% at room temperature. Compared devices without modification, a memory cell Ag/10% H2O2-egg albumen/indium tin oxide exhibits obviously enhanced resistive switching behavior resistance ratio 104, self-healing endurance for 900 cycles prolonged retention time 104 s @ 200 mV reading voltage after being bent 103 times. The breakage massive protein chains occurs followed the recombination new chain networks...
Herein, the evolution map of memristor from a pure capacitive state to resistive switching is discovered.
Abstract Solar cells based on perovskite absorbers are rapidly emerging as attractive candidates for photovoltaics development. Understanding the role of electron‐transport layer (ETL) is very important to obtain highly efficient solar cells. Herein, effect ETL device performance in planar investigated detail, and band bending different situations discussed. The ET barrier shown be responsible poor fill factor (FF) J – V curves. Introduction a thin bathocuproine interlayer increases...
Abstract Organic–inorganic halide perovskite solar cells (PSCs) have reached certified efficiencies of over 23 % with expensive organic hole‐transporting materials. However, the use an inorganic hole‐transport layer (HTL) remains crucial as it would reduce cost combined higher mobility and stability. In this direction, application Cu 2 O top in PSCs is still complicated owing to difficulty solution processing. Herein, a solution‐processing method reported for preparing nanocubes p‐type HTL...
Recently, Sn–Pb low‐bandgap ( E g ) perovskite solar cells (PSCs) have attracted enormous interest as an ideal bottom cell for all‐perovskite tandem cells. However, due to the lack of high‐performance low‐ PSCs, development is severely constrained. Herein, performance (1.2 eV) PSC improved significantly using diluted poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) a hole transport layer with maximum power conversion efficiency (PCE) up 19.58% and short‐circuit current...