A5062782757- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Smart Agriculture and AI
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Advanced biosensing and bioanalysis techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Nanoparticles: synthesis and applications
- Advanced Photonic Communication Systems
- Radio Frequency Integrated Circuit Design
- Chalcogenide Semiconductor Thin Films
- Optical Network Technologies
- Electrochemical sensors and biosensors
- IoT and Edge/Fog Computing
- solar cell performance optimization
- Semiconductor materials and interfaces
- Advanced Optical Network Technologies
- Water Quality Monitoring Technologies
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- UAV Applications and Optimization
- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Electrochemical Analysis and Applications
Techno India University
2019-2024
Weatherford College
2018
University of Wales
1991
Abstract The current manuscript for Asymmetric Junctionless Dual Material Double Gate MOSFET (AJDMDG MOSFET) biosensor reports improved sensitivity both threshold voltage and ON-current. In the presence of high-K dielectric material, device was built using neutral charged biomolecules. After calculating minimal surface potential, is calculated by solving 2D Poisson’s equation a parabolic-potential configuration under realistic boundary circumstances. Analytical results show good agreement...
In this work, the impact of back gate work function on analog/RF performance Asymmetric Junctionless Dual Material Double Gate MOSFET with high K Stack (AJDMDG MOSFET) has been studied. The parameters like drain current (ID), transconductance (gm), generation factor (TGF), intrinsic gain, output resistance (rout), cut-off frequency, maximum frequency oscillation (fmax) etc. have studied through TCAD device simulator. results reveal that an improvement in achieved by choosing a low value gate.
In this paper, we present a 2D analytical modeling of UTBB SOI MOSFET by introducing gap in the gate for which new structure behaves like dual and compared result with TCAD simulation. A Poisson's equation is used solving surface potential profile, electric field distribution, threshold voltage, DIBL drain current through parabolic approximation method. comparative study increasing negative voltage on control has been carried out. Here observe distributions, applying right proposed...
Abstract Impact of underlap layer is analytically investigated on asymmetric junctionless dual material double gate MOSFET (AJDMDG) to reduce subthreshold slope and threshold voltage, which are two essential requirements with shrinking device dimensions avoid short channel effects. The model utilizes two-dimensional Poisson’s equation parabolic approximation for determining electrical parameters where dimensional ranges kept within fabrication limit. Excellent accuracy found the obtained...
Gate-to-source leakage current in symmetric double-gate MOSFET is analytically computed considering the effect of transverse surface electric field and charges at both source drain regions. Tunneling through trapezoidal potential barrier considered, charge factors are taken into account contacts. Channel length modulation, mobility degradation threshold roll-off considered for modelling, various structural parameters applied bias ranges under practical doping conditions. Optimum lower level...
Underlap asymmetric junctionless dual material double gate MOSFET (UAJDMDG MOSFET) has been proposed and analytically modeled to enhance SCEs as well hot carrier reliability (HCEs). Poisson's equation is used characterize the recommended structure from boundary conditions through method of parabolic approximation. have compared with UAJDG structure. Potential distribution, DIBL, SS, drain current, transconductance all studied Figure merit (FOM) measures. The results show that UAJDMDG...
Abstract Fill factor and conversion efficiency of single heterojunction solar cell is analytically computed based on the shallow doping at GaAs quantum well region. Poisson’s equation solved with suitable boundary condition applied hetero-interface for both dark illuminated conditions, corresponding to which open-circuit voltage short-circuit current are computed. Realistic dependence minority carrier distribution material layers diffusion widths taken into account simulation purpose. Result...
We propose a new 2D analytical modeling of dual material double gate MOSFET which worked as unipolar junction transistor. A region N+ on the source terminal and P-region drain terminals are used to construct structure novel by forming an at side. Here we observed different variation such surface potential structure, distribution electric field, threshold voltage, DIBL, subthreshold swings. These observations analytically modeled solve Poisson's equation applying parabolic approximation...
In this paper, an analytical model is proposed for Asymmetric Junctionless dual material double gate (AJDMDG) MOSFETs structure with high K dielectric developing electrostatic potential, electric field, front threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ), subthreshold swing (SS). The potential found by solving Poisson's equation through parabolic approximation method. Moreover, the developed asymmetric nature in...